STripFET™ H7 Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Package / Case
Operating Temperature
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Qualification
Technology
Results remaining4
Applied Filters:
STripFET™ H7
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
STL23NS3LLH7
MOSFET N-CH 30V 92A POWERFLAT
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
6,099 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
-
MOSFET (Metal Oxide)
-
2.3V @ 1mA
STripFET™ H7
92A (Tc)
4.5V, 10V
3.7mOhm @ 11.5A, 10V
13.7 nC @ 4.5 V
±20V
2100 pF @ 15 V
2.9W (Ta), 50W (Tc)
PowerFlat™ (3.3x3.3)
-
STD90NS3LLH7
MOSFET N-CHANNEL 30V 80A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-
MOSFET (Metal Oxide)
Schottky Diode (Body)
1.2V @ 1mA
STripFET™ H7
80A (Tc)
4.5V, 10V
3.4mOhm @ 40A, 10V
13.7 nC @ 4.5 V
±20V
2110 pF @ 25 V
57W (Tc)
DPAK
-
STR1P2UH7
MOSFET P-CH 20V 1.4A SOT-23
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
20 V
-
MOSFET (Metal Oxide)
-
1V @ 250µA
STripFET™ H7
1.4A (Ta)
1.8V, 4.5V
100mOhm @ 700mA, 4.5V
4.8 nC @ 4.5 V
±8V
510 pF @ 10 V
350mW (Tc)
SOT-23-3
-
STL110NS3LLH7
MOSFET N-CH 30V 120A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
-
MOSFET (Metal Oxide)
-
2.3V @ 1mA
STripFET™ H7
120A (Tc)
4.5V, 10V
3.4mOhm @ 14A, 10V
13.7 nC @ 4.5 V
±20V
2110 pF @ 25 V
4W (Ta), 75W (Tc)
PowerFlat™ (5x6)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.