TrenchP™ Series, Single FETs, MOSFETs

Results:
68
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Drain to Source Voltage (Vdss)
Mounting Type
Vgs(th) (Max) @ Id
Operating Temperature
FET Type
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining68
Applied Filters:
TrenchP™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTP96P085T
MOSFET P-CH 85V 96A TO220AB
1+
$3.5493
5+
$3.3521
10+
$3.1549
Quantity
8,301 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
85 V
96A (Tc)
10V
13mOhm @ 48A, 10V
180 nC @ 10 V
±15V
13100 pF @ 25 V
298W (Tc)
-
IXTA96P085T-TRL
MOSFET P-CH 85V 96A TO263
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
3,969 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
85 V
96A (Tc)
10V
13mOhm @ 48A, 10V
180 nC @ 10 V
±15V
13100 pF @ 25 V
298W (Tc)
-
IXTA10P15T
MOSFET P-CH 150V 10A TO263
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
3,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
150 V
10A (Tc)
10V
350mOhm @ 5A, 10V
36 nC @ 10 V
±15V
2210 pF @ 25 V
83W (Ta)
-
IXTY26P10T-TRL
MOSFET P-CH 100V 26A TO252
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
100 V
26A (Tc)
10V
90mOhm @ 13A, 10V
52 nC @ 10 V
±15V
3820 pF @ 25 V
150W (Tc)
-
IXTY48P05T-TRL
MOSFET P-CH 50V 48A TO252
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
50 V
48A (Tc)
10V
30mOhm @ 24A, 10V
53 nC @ 10 V
±15V
3660 pF @ 25 V
150W (Tc)
-
IXTA44P15T-TRL
MOSFET P-CH 150V 44A TO263
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
2,105 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
150 V
44A (Tc)
10V
65mOhm @ 22A, 10V
175 nC @ 10 V
±15V
13400 pF @ 25 V
298W (Tc)
-
IXTP120P065T
MOSFET P-CH 65V 120A TO220AB
1+
$5.3011
5+
$5.0066
10+
$4.7121
Quantity
2,004 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
65 V
120A (Tc)
10V
10mOhm @ 500mA, 10V
185 nC @ 10 V
±15V
13200 pF @ 25 V
298W (Tc)
-
IXTA96P085T
MOSFET P-CH 85V 96A TO263
1+
$43.0986
5+
$40.7042
10+
$38.3099
Quantity
1,350 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
85 V
96A (Tc)
10V
13mOhm @ 48A, 10V
180 nC @ 10 V
±15V
13100 pF @ 25 V
298W (Tc)
-
IXTK210P10T
MOSFET P-CH -100V -210A TO-264
1+
$45.6338
5+
$43.0986
10+
$40.5634
Quantity
990 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
TrenchP™
-
-
-
-
-
-
-
-
-
IXTY26P10T
MOSFET P-CH 100V 26A TO252
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
100 V
26A (Tc)
10V
90mOhm @ 13A, 10V
52 nC @ 10 V
±15V
3820 pF @ 25 V
150W (Tc)
-
IXTA120P065T
MOSFET P-CH 65V 120A TO263
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
687 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
65 V
120A (Tc)
10V
10mOhm @ 500mA, 10V
185 nC @ 10 V
±15V
13200 pF @ 25 V
298W (Tc)
-
IXTA140P05T
MOSFET P-CH 50V 140A TO263
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
592 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
50 V
140A (Tc)
10V
9mOhm @ 70A, 10V
200 nC @ 10 V
±15V
13500 pF @ 25 V
298W (Tc)
-
IXTY48P05T
MOSFET P-CH 50V 48A TO252
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
583 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
50 V
48A (Tc)
10V
30mOhm @ 24A, 10V
53 nC @ 10 V
±15V
3660 pF @ 25 V
150W (Tc)
-
IXTA44P15T
MOSFET P-CH 150V 44A TO263
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
365 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
150 V
44A (Tc)
10V
65mOhm @ 22A, 10V
175 nC @ 10 V
±15V
13400 pF @ 25 V
298W (Tc)
-
IXTP32P20T
MOSFET P-CH 200V 32A TO220AB
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
160 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
200 V
32A (Tc)
10V
130mOhm @ 16A, 10V
185 nC @ 10 V
±15V
14500 pF @ 25 V
300W (Tc)
-
IXTT140P10T
MOSFET P-CH 100V 140A TO268
1+
$32.9577
5+
$31.1268
10+
$29.2958
Quantity
20 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
P-Channel
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchP™
100 V
140A (Tc)
10V
12mOhm @ 70A, 10V
400 nC @ 10 V
±15V
31400 pF @ 25 V
568W (Tc)
-
IXTN210P10T
MOSFET P-CH 100V 210A SOT227B
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
4 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
SOT-227-4, miniBLOC
SOT-227B
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
100 V
210A (Tc)
10V
7.5mOhm @ 105A, 10V
740 nC @ 10 V
±15V
69500 pF @ 25 V
830W (Tc)
-
IXTA15P15T
MOSFET P-CH 150V 15A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
150 V
15A (Tc)
10V
240mOhm @ 7A, 10V
48 nC @ 10 V
±15V
3650 pF @ 25 V
150W (Tc)
-
IXTA32P05T-TRL
MOSFET P-CH 50V 32A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
50 V
32A (Tc)
10V
39mOhm @ 16A, 10V
46 nC @ 10 V
±15V
1975 pF @ 25 V
83W (Tc)
-
IXTY32P05T-TRL
MOSFET P-CH 50V 32A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
P-Channel
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchP™
50 V
32A (Tc)
10V
39mOhm @ 16A, 10V
46 nC @ 10 V
±15V
1975 pF @ 25 V
83W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.