NexFET™ Series, Single FETs, MOSFETs

Results:
240
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining240
Applied Filters:
NexFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
CSD13381F4
MOSFET N-CH 12V 2.1A 3PICOSTAR
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
850,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
3-XFDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.1V @ 250µA
12 V
2.1A (Ta)
1.8V, 4.5V
180mOhm @ 500mA, 4.5V
1.4 nC @ 4.5 V
8V
200 pF @ 6 V
500mW (Ta)
3-PICOSTAR
-
CSD19538Q3A
MOSFET N-CH 100V 15A 8VSON
1+
$0.1394
5+
$0.1317
10+
$0.1239
Quantity
351,149 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
NexFET™
MOSFET (Metal Oxide)
-
3.8V @ 250µA
100 V
15A (Ta)
6V, 10V
59mOhm @ 5A, 10V
4.3 nC @ 10 V
±20V
454 pF @ 50 V
2.8W (Ta), 23W (Tc)
8-VSONP (3x3.3)
-
CSD17483F4
MOSFET N-CH 30V 1.5A 3PICOSTAR
1+
$0.0558
5+
$0.0527
10+
$0.0496
Quantity
317,876 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
3-XFDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.1V @ 250µA
30 V
1.5A (Ta)
1.8V, 4.5V
240mOhm @ 500mA, 8V
1.3 nC @ 4.5 V
12V
190 pF @ 15 V
500mW (Ta)
3-PICOSTAR
-
CSD23381F4
MOSFET P-CH 12V 2.3A 3PICOSTAR
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
274,504 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
3-XFDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.2V @ 250µA
12 V
2.3A (Ta)
1.8V, 4.5V
175mOhm @ 500mA, 4.5V
1.14 nC @ 4.5 V
-8V
236 pF @ 6 V
500mW (Ta)
3-PICOSTAR
-
CSD16301Q2
MOSFET N-CH 25V 5A 6SON
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
173,135 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
6-SMD, Flat Leads
-
NexFET™
MOSFET (Metal Oxide)
-
1.55V @ 250µA
25 V
5A (Tc)
3V, 8V
24mOhm @ 4A, 8V
2.8 nC @ 4.5 V
+10V, -8V
340 pF @ 12.5 V
2.3W (Ta)
6-SON
-
CSD18540Q5B
MOSFET N-CH 60V 100A 8VSON
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
165,893 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
2.3V @ 250µA
60 V
100A (Ta)
4.5V, 10V
2.2mOhm @ 28A, 10V
53 nC @ 10 V
±20V
4230 pF @ 30 V
3.1W (Ta), 195W (Tc)
8-VSON-CLIP (5x6)
-
CSD25302Q2
MOSFET P-CH 20V 5A 6SON
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
127,226 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
6-SMD, Flat Leads
-
NexFET™
MOSFET (Metal Oxide)
-
900mV @ 250µA
20 V
5A (Tc)
1.8V, 4.5V
49mOhm @ 3A, 4.5V
3.4 nC @ 4.5 V
±8V
350 pF @ 10 V
2.4W (Ta)
6-SON
-
CSD25310Q2
MOSFET P-CH 20V 20A 6WSON
1+
$0.1901
5+
$0.1796
10+
$0.1690
Quantity
108,950 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
6-WDFN Exposed Pad
-
NexFET™
MOSFET (Metal Oxide)
-
1.1V @ 250µA
20 V
20A (Ta)
1.8V, 4.5V
23.9mOhm @ 5A, 4.5V
4.7 nC @ 4.5 V
±8V
655 pF @ 10 V
2.9W (Ta)
6-WSON (2x2)
-
CSD25483F4
MOSFET P-CH 20V 1.6A 3PICOSTAR
1+
$0.0583
5+
$0.0551
10+
$0.0518
Quantity
105,164 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
3-XFDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.2V @ 250µA
20 V
1.6A (Ta)
1.8V, 4.5V
205mOhm @ 500mA, 8V
0.959 nC @ 4.5 V
-12V
198 pF @ 10 V
500mW (Ta)
3-PICOSTAR
-
CSD17309Q3
MOSFET N-CH 30V 20A/60A 8VSON
1+
$2.4085
5+
$2.2746
10+
$2.1408
Quantity
105,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.7V @ 250µA
30 V
20A (Ta), 60A (Tc)
3V, 8V
5.4mOhm @ 18A, 8V
10 nC @ 4.5 V
+10V, -8V
1440 pF @ 15 V
2.8W (Ta)
8-VSON-CLIP (3.3x3.3)
-
CSD19534Q5A
MOSFET N-CH 100V 50A 8VSON
1+
$0.4310
5+
$0.4070
10+
$0.3831
Quantity
88,888 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
3.4V @ 250µA
100 V
44A (Tc)
6V, 10V
15.1mOhm @ 10A, 10V
22 nC @ 10 V
±20V
1680 pF @ 50 V
3.2W (Ta), 63W (Tc)
8-VSONP (5x6)
-
CSD19533Q5A
MOSFET N-CH 100V 100A 8VSON
1+
$0.8113
5+
$0.7662
10+
$0.7211
Quantity
88,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
3.4V @ 250µA
100 V
100A (Ta)
6V, 10V
9.4mOhm @ 13A, 10V
35 nC @ 10 V
±20V
2670 pF @ 50 V
3.2W (Ta), 96W (Tc)
8-VSONP (5x6)
-
CSD19536KTT
MOSFET N-CH 100V 200A DDPAK
1+
$2.2817
5+
$2.1549
10+
$2.0282
Quantity
87,741 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
-
NexFET™
MOSFET (Metal Oxide)
-
3.2V @ 250µA
100 V
200A (Ta)
6V, 10V
2.4mOhm @ 100A, 10V
153 nC @ 10 V
±20V
12000 pF @ 50 V
375W (Tc)
TO-263 (DDPAK-3)
-
CSD18563Q5A
MOSFET N-CH 60V 100A 8VSON
1+
$0.8113
5+
$0.7662
10+
$0.7211
Quantity
85,638 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
2.4V @ 250µA
60 V
100A (Ta)
4.5V, 10V
6.8mOhm @ 18A, 10V
20 nC @ 10 V
±20V
1500 pF @ 30 V
3.2W (Ta), 116W (Tc)
8-VSONP (5x6)
-
CSD17559Q5
MOSFET N-CH 30V 40A/100A 8VSON
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
85,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.7V @ 250µA
30 V
40A (Ta), 100A (Tc)
4.5V, 10V
1.15mOhm @ 40A, 10V
51 nC @ 4.5 V
±20V
9200 pF @ 15 V
3.2W (Ta), 96W (Tc)
8-VSON-CLIP (5x6)
-
CSD17318Q2
MOSFET N-CH 30V 25A 6WSON
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
71,440 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
6-WDFN Exposed Pad
-
NexFET™
MOSFET (Metal Oxide)
-
1.2V @ 250µA
30 V
25A (Tc)
2.5V, 8V
15.1mOhm @ 8A, 8V
6 nC @ 4.5 V
±10V
879 pF @ 15 V
16W (Tc)
6-WSON (2x2)
-
CSD19538Q2
MOSFET N-CH 100V 14.4A 6WSON
1+
$0.2789
5+
$0.2634
10+
$0.2479
Quantity
66,236 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
6-WDFN Exposed Pad
-
NexFET™
MOSFET (Metal Oxide)
-
3.8V @ 250µA
100 V
14.4A (Ta)
6V, 10V
59mOhm @ 5A, 10V
5.6 nC @ 10 V
±20V
454 pF @ 50 V
2.5W (Ta), 20.2W (Tc)
6-WSON (2x2)
-
CSD25401Q3
MOSFET P-CH 20V 14A/60A 8VSON
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
66,109 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.2V @ 250µA
20 V
14A (Ta), 60A (Tc)
2.5V, 4.5V
11.7mOhm @ 10A, 4.5V
12.3 nC @ 4.5 V
±12V
1400 pF @ 10 V
2.8W (Ta)
8-VSON-CLIP (3.3x3.3)
-
CSD25402Q3A
MOSFET P-CH 20V 76A 8VSON
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
64,664 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerVDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.15V @ 250µA
20 V
76A (Tc)
1.8V, 4.5V
8.9mOhm @ 10A, 4.5V
9.7 nC @ 4.5 V
±12V
1790 pF @ 10 V
2.8W (Ta), 69W (Tc)
8-VSONP (3x3.3)
-
CSD17308Q3
MOSFET N-CH 30V 14A/44A 8VSON
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
60,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.8V @ 250µA
30 V
14A (Ta), 44A (Tc)
3V, 8V
10.3mOhm @ 10A, 8V
5.1 nC @ 4.5 V
+10V, -8V
700 pF @ 15 V
2.7W (Ta)
8-VSON-CLIP (3.3x3.3)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.