Dual Cool™, PowerTrench®, SyncFET™ Series, Single FETs, MOSFETs

Results:
11
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Vgs(th) (Max) @ Id
Qualification
Package / Case
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining11
Applied Filters:
Dual Cool™, PowerTrench®, SyncFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradePackage / CaseTechnologyFET FeatureVgs(th) (Max) @ IdSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
FDMS3008SDC
MOSFET N-CH 30V 29A DUAL COOL56
1+
$2.2310
5+
$2.1070
10+
$1.9831
Quantity
6,516 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
29A (Ta)
4.5V, 10V
2.6mOhm @ 28A, 10V
64 nC @ 10 V
±20V
4520 pF @ 15 V
3.3W (Ta), 78W (Tc)
Dual Cool™56
-
FDMC2514SDC
MOSFET N-CH 25V 24A/40A DLCOOL33
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
143 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
24A (Ta), 40A (Tc)
4.5V, 10V
3.5mOhm @ 22.5A, 10V
44 nC @ 10 V
±20V
2705 pF @ 13 V
3W (Ta), 60W (Tc)
Dual Cool ™ 33
-
FDMS3006SDC
MOSFET N-CH 30V 34A DUAL COOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
34A (Ta)
4.5V, 10V
1.9mOhm @ 30A, 10V
80 nC @ 10 V
±20V
5725 pF @ 15 V
3.3W (Ta), 89W (Tc)
Dual Cool™56
-
FDMS2510SDC
MOSFET N-CH 25V 28A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
28A (Ta), 49A (Tc)
4.5V, 10V
2.9mOhm @ 23A, 10V
45 nC @ 10 V
±20V
2780 pF @ 13 V
3.3W (Ta), 60W (Tc)
8-PQFN (5x6)
-
FDMS2508SDC
MOSFET N-CH 25V 34A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
34A (Ta), 49A (Tc)
4.5V, 10V
1.95mOhm @ 28A, 10V
69 nC @ 10 V
±20V
4515 pF @ 13 V
3.3W (Ta), 78W (Tc)
8-PQFN (5x6)
-
FDMS2506SDC
MOSFET N-CH 25V 39A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
39A (Ta), 49A (Tc)
4.5V, 10V
1.45mOhm @ 30A, 10V
93 nC @ 10 V
±20V
5945 pF @ 13 V
3.3W (Ta), 89W (Tc)
8-PQFN (5x6)
-
FDMS2504SDC
MOSFET N-CH 25V 42A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
42A (Ta), 49A (Tc)
4.5V, 10V
1.25mOhm @ 32A, 10V
119 nC @ 10 V
±20V
7770 pF @ 13 V
3.3W (Ta), 104W (Tc)
8-PQFN (5x6)
-
FDMS2504SDC
MOSFET N-CH 25V 42A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
42A (Ta), 49A (Tc)
4.5V, 10V
1.25mOhm @ 32A, 10V
119 nC @ 10 V
±20V
7770 pF @ 13 V
3.3W (Ta), 104W (Tc)
8-PQFN (5x6)
-
FDMS2506SDC
MOSFET N-CH 25V 39A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
39A (Ta), 49A (Tc)
4.5V, 10V
1.45mOhm @ 30A, 10V
93 nC @ 10 V
±20V
5945 pF @ 13 V
3.3W (Ta), 89W (Tc)
8-PQFN (5x6)
-
FDMS2508SDC
MOSFET N-CH 25V 34A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
34A (Ta), 49A (Tc)
4.5V, 10V
1.95mOhm @ 28A, 10V
69 nC @ 10 V
±20V
4515 pF @ 13 V
3.3W (Ta), 78W (Tc)
8-PQFN (5x6)
-
FDMS2510SDC
MOSFET N-CH 25V 28A/49A DLCOOL56
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
3V @ 1mA
Dual Cool™, PowerTrench®, SyncFET™
28A (Ta), 49A (Tc)
4.5V, 10V
2.9mOhm @ 23A, 10V
45 nC @ 10 V
±20V
2780 pF @ 13 V
3.3W (Ta), 60W (Tc)
8-PQFN (5x6)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.