SuperFREDmesh3™ Series, Single FETs, MOSFETs

Results:
3
Manufacturer
Series
Supplier Device Package
Package / Case
Mounting Type
Power Dissipation (Max)
Operating Temperature
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Grade
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Qualification
Technology
Current - Continuous Drain (Id) @ 25°C
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining3
Applied Filters:
SuperFREDmesh3™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STD7N52DK3
MOSFET N-CH 525V 6A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V @ 50µA
SuperFREDmesh3™
525 V
10V
1.15Ohm @ 3A, 10V
33 nC @ 10 V
±30V
870 pF @ 50 V
90W (Tc)
-
STP7N52DK3
MOSFET N-CH 525V 6A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
150°C (TJ)
-
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V @ 50µA
SuperFREDmesh3™
525 V
10V
1.15Ohm @ 3A, 10V
33 nC @ 10 V
±30V
870 pF @ 50 V
90W (Tc)
-
STF7N52DK3
MOSFET N-CH 525V 6A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220FP
150°C (TJ)
-
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V @ 50µA
SuperFREDmesh3™
525 V
10V
1.15Ohm @ 3A, 10V
33 nC @ 10 V
±30V
870 pF @ 50 V
25W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.