FRFET®, SuperFET® II Series, Single FETs, MOSFETs

Results:
23
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining23
Applied Filters:
FRFET®, SuperFET® II
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCPF260N65FL1
MOSFET N-CH 650V 15A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
FRFET®, SuperFET® II
10V
260mOhm @ 7.5A, 10V
5V @ 1.5mA
60 nC @ 10 V
±20V
2340 pF @ 100 V
36W (Tc)
-
FCB110N65F
MOSFET N-CH 650V 35A D2PAK
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
19,980 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
650 V
-
MOSFET (Metal Oxide)
-
35A (Tc)
FRFET®, SuperFET® II
10V
110mOhm @ 17.5A, 10V
5V @ 3.5mA
145 nC @ 10 V
±20V
4895 pF @ 100 V
357W (Tc)
-
FCP190N65F
MOSFET N-CH 650V 20.6A TO220-3
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
15,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
20.6A (Tc)
FRFET®, SuperFET® II
10V
190mOhm @ 10A, 10V
5V @ 2mA
78 nC @ 10 V
±20V
3225 pF @ 25 V
208W (Tc)
-
FCH072N60F
MOSFET N-CH 600V 52A TO247-3
1+
$6.0845
5+
$5.7465
10+
$5.4085
Quantity
10,539 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
600 V
-
MOSFET (Metal Oxide)
-
52A (Tc)
FRFET®, SuperFET® II
10V
72mOhm @ 26A, 10V
5V @ 250µA
215 nC @ 10 V
±20V
8660 pF @ 100 V
481W (Tc)
-
FCPF380N65FL1
MOSFET N-CH 650V 10.2A TO220F
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
10.2A (Tc)
FRFET®, SuperFET® II
10V
380mOhm @ 5.1A, 10V
5V @ 1mA
43 nC @ 10 V
±20V
1680 pF @ 100 V
33W (Tc)
-
FCH041N65EFL4
POWER FIELD-EFFECT TRANSISTOR, N
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
2,694 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
298 nC @ 10 V
±20V
12560 pF @ 100 V
595W (Tc)
-
FCH041N65EFL4
MOSFET N-CH 650V 76A TO247
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
2,694 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
298 nC @ 10 V
±20V
12560 pF @ 100 V
595W (Tc)
-
FCPF380N65FL1-F154
MOSFET N-CH 650V 10.2A TO220F-3
1+
$2.2817
5+
$2.1549
10+
$2.0282
Quantity
900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
10.2A (Tc)
FRFET®, SuperFET® II
-
380mOhm @ 5.1A, 10V
5V @ 1mA
43 nC @ 10 V
±20V
1680 pF @ 100 V
33W (Tc)
-
FCP110N65F
MOSFET N-CH 650V 35A TO220-3
1+
$70.9859
5+
$67.0423
10+
$63.0986
Quantity
800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
35A (Tc)
FRFET®, SuperFET® II
10V
110mOhm @ 17.5A, 10V
5V @ 3.5mA
145 nC @ 10 V
±20V
4895 pF @ 100 V
357W (Tc)
-
FCH041N65EF-F155
MOSFET N-CH 650V 76A TO247
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
583 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
298 nC @ 10 V
±20V
12560 pF @ 100 V
595W (Tc)
-
NTP082N65S3F
MOSFET N-CH 650V 40A TO220-3
1+
$73.5211
5+
$69.4366
10+
$65.3521
Quantity
211 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
40A (Tc)
FRFET®, SuperFET® II
10V
82mOhm @ 20A, 10V
5V @ 4mA
81 nC @ 10 V
±30V
3410 pF @ 400 V
313W (Tc)
-
NTH027N65S3F-F155
MOSFET N-CH 650V 75A TO247-3
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
75A (Tc)
FRFET®, SuperFET® II
10V
27.4mOhm @ 35A, 10V
5V @ 7.5mA
259 nC @ 10 V
±30V
7690 pF @ 400 V
595W (Tc)
-
FCPF260N65FL1
MOSFET N-CH 650V 15A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
FRFET®, SuperFET® II
10V
260mOhm @ 7.5A, 10V
5V @ 1.5mA
60 nC @ 10 V
±20V
2340 pF @ 100 V
36W (Tc)
-
FCH041N65EFLN4
MOSFET N-CH 650V 76A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
298 nC @ 10 V
±20V
12560 pF @ 100 V
595W (Tc)
-
FCH041N65F-F155
MOSFET N-CH 650V 76A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
76A (Tc)
FRFET®, SuperFET® II
10V
41mOhm @ 38A, 10V
5V @ 7.6mA
294 nC @ 10 V
±20V
13020 pF @ 100 V
595W (Tc)
-
NTH027N65S3F_F155
MOSFET N-CH 650V 75A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
75A (Tc)
FRFET®, SuperFET® II
10V
27.4mOhm @ 35A, 10V
5V @ 7.5mA
259 nC @ 10 V
±30V
7690 pF @ 400 V
595W (Tc)
-
FCPF260N65FL1-F154
MOSFET N-CH 650V 15A TO220F-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
FRFET®, SuperFET® II
-
260mOhm @ 7.5A, 10V
5V @ 1.5mA
60 nC @ 10 V
±20V
2340 pF @ 100 V
36W (Tc)
-
FCH077N65F-F155
MOSFET N-CH 650V 54A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
54A (Tc)
FRFET®, SuperFET® II
10V
77mOhm @ 27A, 10V
5V @ 5.4mA
164 nC @ 10 V
±20V
7109 pF @ 100 V
481W (Tc)
-
FCH110N65F-F155
MOSFET N-CH 650V 35A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
35A (Tc)
FRFET®, SuperFET® II
10V
110mOhm @ 17.5A, 10V
5V @ 3.5mA
145 nC @ 10 V
±20V
4895 pF @ 100 V
357W (Tc)
-
FCH077N65F-F155
MOSFET N-CH 650V 54A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
54A (Tc)
FRFET®, SuperFET® II
10V
77mOhm @ 27A, 10V
5V @ 5.4mA
164 nC @ 10 V
±20V
7109 pF @ 100 V
481W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.