Military, MIL-PRF-19500/557 Series, Single FETs, MOSFETs

Results:
14
Manufacturer
Series
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining14
Applied Filters:
Military, MIL-PRF-19500/557
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)Supplier Device PackageInput Capacitance (Ciss) (Max) @ Vds
JAN2N6802U
MOSFET N-CH 500V 2.5A 18ULCC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
18-CLCC
MOSFET (Metal Oxide)
-
2.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
500 V
10V
1.6Ohm @ 2.5A, 10V
33 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
18-ULCC (9.14x7.49)
-
JAN2N6800U
MOSFET N-CH 400V 3A 18ULCC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
18-CLCC
MOSFET (Metal Oxide)
-
3A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
400 V
10V
1.1Ohm @ 3A, 10V
34.75 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
18-ULCC (9.14x7.49)
-
JANTX2N6796
MOSFET N-CH 100V 8A TO205AF
1+
$21.5493
5+
$20.3521
10+
$19.1549
Quantity
3,619 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AD, TO-39-3 Metal Can
MOSFET (Metal Oxide)
-
8A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
100 V
10V
195mOhm @ 8A, 10V
28.51 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JAN2N6796
MOSFET N-CH 100V 8A TO39
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
8A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
100 V
10V
195mOhm @ 8A, 10V
28.51 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-39
-
JANTX2N6798
MOSFET N-CH 200V 5.5A TO205AF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
5.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
200 V
10V
420mOhm @ 5.5A, 10V
42.07 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JANTX2N6800
MOSFET N-CH 400V 3A TO205AF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AD, TO-39-3 Metal Can
MOSFET (Metal Oxide)
-
3A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
400 V
10V
1.1Ohm @ 3A, 10V
34.75 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JANTX2N6802
MOSFET N-CH 500V 2.5A TO205AF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
2.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
500 V
10V
1.6Ohm @ 2.5A, 10V
33 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JANTXV2N6796
MOSFET N-CH 100V 8A TO205AF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
8A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
100 V
10V
195mOhm @ 8A, 10V
28.51 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JANTXV2N6798
MOSFET N-CH 200V 5.5A TO205AF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
5.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
200 V
10V
420mOhm @ 5.5A, 10V
42.07 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JANTXV2N6800
MOSFET N-CH 400V 3A TO205AF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
3A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
400 V
10V
1.1Ohm @ 3A, 10V
34.75 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JANTXV2N6802
MOSFET N-CH 500V 2.5A TO205AF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
2.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
500 V
10V
1.6Ohm @ 2.5A, 10V
33 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-205AF (TO-39)
-
JAN2N6800
MOSFET N-CH 400V 3A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
3A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
400 V
10V
1.1Ohm @ 3A, 10V
34.75 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-39
-
JAN2N6802
MOSFET N-CH 500V 2.5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
2.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
500 V
10V
1.6Ohm @ 2.5A, 10V
33 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-39
-
JAN2N6798
MOSFET N-CH 200V 5.5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-205AF Metal Can
MOSFET (Metal Oxide)
-
5.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/557
200 V
10V
420mOhm @ 5.5A, 10V
42.07 nC @ 10 V
±20V
800mW (Ta), 25W (Tc)
TO-39
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.