DTMOSIV Series, Single FETs, MOSFETs

Results:
117
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Supplier Device Package
Package / Case
Operating Temperature
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining117
Applied Filters:
DTMOSIV
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseSupplier Device PackageTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
TK16C60W,S1VQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
15.8A (Ta)
10V
190mOhm @ 7.9A, 10V
3.7V @ 790µA
38 nC @ 10 V
±30V
1350 pF @ 300 V
130W (Tc)
TK7E80W,S1X
1+
¥0.6845
5+
¥0.6465
10+
¥0.6085
Quantity
50,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C
TO-220-3
TO-220
MOSFET (Metal Oxide)
-
DTMOSIV
800 V
6.5A (Ta)
10V
950mOhm @ 3.3A, 10V
4V @ 280µA
13 nC @ 10 V
±20V
700 pF @ 300 V
110W (Tc)
TK5P60W,RVQ
1+
¥0.3042
5+
¥0.2873
10+
¥0.2704
Quantity
14,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
5.4A (Ta)
10V
900mOhm @ 2.7A, 10V
3.7V @ 270µA
10.5 nC @ 10 V
±30V
380 pF @ 300 V
60W (Tc)
TK31V60W5,LVQ
1+
¥3.8028
5+
¥3.5915
10+
¥3.3803
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TA)
4-VSFN Exposed Pad
4-DFN-EP (8x8)
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
30.8A (Ta)
10V
109mOhm @ 15.4A, 10V
4.5V @ 1.5mA
105 nC @ 10 V
±30V
3000 pF @ 300 V
240W (Tc)
TK20A60W5,S5VX
1+
¥3.5493
5+
¥3.3521
10+
¥3.1549
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
TO-220SIS
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
20A (Ta)
10V
175mOhm @ 10A, 10V
4.5V @ 1mA
55 nC @ 10 V
±30V
1800 pF @ 300 V
45W (Tc)
TK7P60W,RVQ
1+
¥1.0141
5+
¥0.9577
10+
¥0.9014
Quantity
1,350 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
7A (Ta)
10V
600mOhm @ 3.5A, 10V
3.7V @ 350µA
15 nC @ 10 V
±30V
490 pF @ 300 V
60W (Tc)
TK8P60W5,RVQ
1+
¥1.0141
5+
¥0.9577
10+
¥0.9014
Quantity
663 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
8A (Ta)
10V
560mOhm @ 4A, 10V
4.5V @ 400µA
22 nC @ 10 V
±30V
590 pF @ 300 V
80W (Tc)
TK14C65W,S1Q
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
MOSFET (Metal Oxide)
-
DTMOSIV
650 V
13.7A (Ta)
10V
250mOhm @ 6.9A, 10V
3.5V @ 690µA
35 nC @ 10 V
±30V
1300 pF @ 300 V
130W (Tc)
TK20C60W,S1VQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
20A (Ta)
10V
155mOhm @ 10A, 10V
3.7V @ 1mA
48 nC @ 10 V
±30V
1680 pF @ 300 V
165W (Tc)
TK16J60W,S1VQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-3P-3, SC-65-3
TO-3P(N)
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
15.8A (Ta)
10V
190mOhm @ 7.9A, 10V
3.7V @ 790µA
38 nC @ 10 V
±30V
1350 pF @ 300 V
130W (Tc)
TK14C65W5,S1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
MOSFET (Metal Oxide)
-
DTMOSIV
650 V
13.7A (Ta)
10V
300mOhm @ 6.9A, 10V
4.5V @ 690µA
40 nC @ 10 V
±30V
1300 pF @ 300 V
130W (Tc)
TK12P60W,RVQ(S
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
11.5A (Ta)
10V
340mOhm @ 5.8A, 10V
3.7V @ 600µA
25 nC @ 10 V
±30V
890 pF @ 300 V
100W (Tc)
TK5Q65W,S1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-251-3 Stub Leads, IPak
I-PAK
MOSFET (Metal Oxide)
-
DTMOSIV
650 V
5.2A (Ta)
10V
1.22Ohm @ 2.6A, 10V
3.5V @ 170µA
10.5 nC @ 10 V
±30V
380 pF @ 300 V
60W (Tc)
TK5A65W,S5X
MOSFET N-CH 650V 5.2A TO220SIS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
TO-220SIS
MOSFET (Metal Oxide)
-
DTMOSIV
650 V
5.2A (Ta)
10V
1.2Ohm @ 2.6A, 10V
3.5V @ 170µA
10.5 nC @ 10 V
±30V
380 pF @ 300 V
30W (Tc)
TK16G60W5,RVQ
PB-F POWER MOSFET TRANSISTOR DPA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
15.8A (Ta)
10V
230mOhm @ 7.9A, 10V
4.5V @ 790µA
43 nC @ 10 V
±30V
1350 pF @ 300 V
130W (Tc)
TK6A65W,S5X
MOSFET N-CH 650V 5.8A TO220SIS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
TO-220SIS
MOSFET (Metal Oxide)
-
DTMOSIV
650 V
5.8A (Ta)
10V
1Ohm @ 2.9A, 10V
3.5V @ 180µA
11 nC @ 10 V
±30V
390 pF @ 300 V
30W (Tc)
TK9A65W,S5X
MOSFET N-CH 650V 9.3A TO220SIS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3 Full Pack
TO-220SIS
MOSFET (Metal Oxide)
-
DTMOSIV
650 V
9.3A (Ta)
10V
500mOhm @ 4.6A, 10V
3.5V @ 350µA
20 nC @ 10 V
±30V
700 pF @ 300 V
30W (Tc)
TK16V60W5,LVQ
PB-F POWER MOSFET TRANSISTOR DTM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
4-VSFN Exposed Pad
4-DFN-EP (8x8)
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
15.8A (Ta)
10V
245mOhm @ 7.9A, 10V
4.5V @ 790µA
43 nC @ 10 V
±30V
1350 pF @ 300 V
139W (Tc)
TK14V65W,LQ
PB-F POWER MOSFET TRANSISTOR DTM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
4-VSFN Exposed Pad
4-DFN-EP (8x8)
MOSFET (Metal Oxide)
-
DTMOSIV
650 V
13.7A (Ta)
10V
280mOhm @ 6.9A, 10V
3.5V @ 690µA
35 nC @ 10 V
±30V
1300 pF @ 300 V
139W (Tc)
TK8Q60W,S1VQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-251-3 Stub Leads, IPak
I-PAK
MOSFET (Metal Oxide)
-
DTMOSIV
600 V
8A (Ta)
10V
500mOhm @ 4A, 10V
3.7V @ 400µA
18.5 nC @ 10 V
±30V
570 pF @ 300 V
80W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.