MDmesh™ II Plus Series, Single FETs, MOSFETs

Results:
75
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining75
Applied Filters:
MDmesh™ II Plus
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STD5N60M2
MOSFET N-CH 600V 3.5A DPAK
1+
$0.3676
5+
$0.3472
10+
$0.3268
Quantity
84,166 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
3.5A (Tc)
10V
1.4Ohm @ 1.7A, 10V
8.5 nC @ 10 V
±25V
211 pF @ 100 V
45W (Tc)
-
STB13N60M2
MOSFET N-CH 600V 11A D2PAK
1+
$0.8113
5+
$0.7662
10+
$0.7211
Quantity
59,890 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
17 nC @ 10 V
±25V
580 pF @ 100 V
110W (Tc)
-
STD10N60M2
MOSFET N-CH 600V 7.5A DPAK
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
57,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
7.5A (Tc)
10V
600mOhm @ 3A, 10V
13.5 nC @ 10 V
±25V
400 pF @ 100 V
85W (Tc)
-
STW24N60M2
MOSFET N-CH 600V 18A TO247
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
33,735 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
18A (Tc)
10V
190mOhm @ 9A, 10V
29 nC @ 10 V
±25V
1060 pF @ 100 V
150W (Tc)
-
STF24N60M2
MOSFET N-CH 600V 18A TO220FP
1+
$0.8620
5+
$0.8141
10+
$0.7662
Quantity
29,901 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220FP
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
18A (Tc)
10V
190mOhm @ 9A, 10V
29 nC @ 10 V
±25V
1060 pF @ 100 V
30W (Tc)
-
STW70N60M2
MOSFET N-CH 600V 68A TO247
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
21,528 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
68A (Tc)
10V
40mOhm @ 34A, 10V
118 nC @ 10 V
±25V
5200 pF @ 100 V
450W (Tc)
-
STB28N60M2
MOSFET N-CH 600V 22A D2PAK
1+
$3.1690
5+
$2.9930
10+
$2.8169
Quantity
17,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
22A (Tc)
10V
150mOhm @ 11A, 10V
36 nC @ 10 V
±25V
1440 pF @ 100 V
170W (Tc)
-
STF40N60M2
MOSFET N-CH 600V 34A TO220FP
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
14,115 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220FP
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
34A (Tc)
10V
88mOhm @ 17A, 10V
57 nC @ 10 V
±25V
2500 pF @ 100 V
40W (Tc)
-
STD9N40M2
MOSFET N-CH 400V 6A DPAK
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
10,978 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
400 V
6A (Tc)
10V
800mOhm @ 3A, 10V
8.8 nC @ 10 V
±25V
270 pF @ 100 V
60W (Tc)
-
STL18N60M2
MOSFET N-CH 600V 9A POWERFLAT HV
1+
$13.9437
5+
$13.1690
10+
$12.3944
Quantity
10,282 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6) HV
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
9A (Tc)
10V
308mOhm @ 4.5A, 10V
21.5 nC @ 10 V
±25V
791 pF @ 100 V
57W (Tc)
-
STP18N60M2
MOSFET N-CH 600V 13A TO220
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
13A (Tc)
10V
280mOhm @ 6.5A, 10V
21.5 nC @ 10 V
±25V
791 pF @ 100 V
110W (Tc)
-
STP40N60M2
MOSFET N-CH 600V 34A TO220
1+
$3.1690
5+
$2.9930
10+
$2.8169
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
34A (Tc)
10V
88mOhm @ 17A, 10V
57 nC @ 10 V
±25V
2500 pF @ 100 V
250W (Tc)
-
STL10N60M2
MOSFET N-CH 600V 5.5A PWRFLAT56
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
8,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6) HV
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
5.5A (Tc)
10V
660mOhm @ 2.5A, 10V
13.5 nC @ 10 V
±25V
400 pF @ 100 V
48W (Tc)
-
STW33N60M2
MOSFET N-CH 600V 26A TO247
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
8,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
26A (Tc)
10V
125mOhm @ 13A, 10V
45.5 nC @ 10 V
±25V
1781 pF @ 100 V
190W (Tc)
-
STW40N60M2
MOSFET N-CH 600V 34A TO247
1+
$3.4225
5+
$3.2324
10+
$3.0423
Quantity
7,130 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
34A (Tc)
10V
88mOhm @ 17A, 10V
57 nC @ 10 V
±25V
2500 pF @ 100 V
250W (Tc)
-
STF13N60M2
MOSFET N-CH 600V 11A TO220FP
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
TO-220FP
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
17 nC @ 10 V
±25V
580 pF @ 100 V
25W (Tc)
-
STI33N60M2
MOSFET N-CH 600V 26A I2PAK
1+
$17.7465
5+
$16.7606
10+
$15.7746
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
TO-262 (I2PAK)
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
26A (Tc)
10V
125mOhm @ 13A, 10V
45.5 nC @ 10 V
±25V
1781 pF @ 100 V
190W (Tc)
-
STP33N60M2
MOSFET N-CH 600V 26A TO220
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
4,972 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
26A (Tc)
10V
125mOhm @ 13A, 10V
45.5 nC @ 10 V
±25V
1781 pF @ 100 V
190W (Tc)
-
STD7N60M2
MOSFET N-CH 600V 5A DPAK
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
3,123 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
5A (Tc)
10V
950mOhm @ 2.5A, 10V
8.8 nC @ 10 V
±25V
271 pF @ 100 V
60W (Tc)
-
STU5N60M2
MOSFET N-CH 600V 3.7A IPAK
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
IPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II Plus
600 V
3.7A (Tc)
10V
1.4Ohm @ 1.85A, 10V
4.5 nC @ 10 V
±25V
165 pF @ 100 V
45W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.