U-MOSIX-H Series, Single FETs, MOSFETs

Results:
69
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Grade
Mounting Type
Qualification
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining69
Applied Filters:
U-MOSIX-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeDrain to Source Voltage (Vdss)GradeOperating TemperatureTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSupplier Device PackageSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SSM6K513NU,LF
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
190,775 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
N-Channel
30 V
-
150°C (TA)
MOSFET (Metal Oxide)
-
15A (Ta)
6-UDFNB (2x2)
U-MOSIX-H
4.5V, 10V
8.9mOhm @ 4A, 10V
2.1V @ 100µA
7.5 nC @ 4.5 V
±20V
1130 pF @ 15 V
1.25W (Ta)
-
TPH1R005PL,L1Q
1+
$2.1549
5+
$2.0352
10+
$1.9155
Quantity
25,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
45 V
-
175°C (TJ)
MOSFET (Metal Oxide)
-
150A (Tc)
8-SOP Advance (5x5)
U-MOSIX-H
4.5V, 10V
1.04mOhm @ 50A, 10V
2.4V @ 1mA
99 nC @ 10 V
±20V
9600 pF @ 22.5 V
960mW (Ta), 170W (Tc)
-
TPH1R306PL,L1Q
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
60 V
-
175°C
MOSFET (Metal Oxide)
-
100A (Tc)
8-SOP Advance (5x5)
U-MOSIX-H
4.5V, 10V
1.34mOhm @ 50A, 10V
2.5V @ 1mA
91 nC @ 10 V
±20V
8100 pF @ 30 V
960mW (Ta), 170W (Tc)
-
TK3R1P04PL,RQ
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
15,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
40 V
-
175°C
MOSFET (Metal Oxide)
-
58A (Tc)
DPAK
U-MOSIX-H
4.5V, 10V
3.1mOhm @ 29A, 10V
2.4V @ 500µA
60 nC @ 10 V
±20V
4670 pF @ 20 V
87W (Tc)
-
TK1R5R04PB,LXGQ
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
7,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
40 V
-
175°C
MOSFET (Metal Oxide)
-
160A (Ta)
D2PAK+
U-MOSIX-H
6V, 10V
1.5mOhm @ 80A, 10V
3V @ 500µA
103 nC @ 10 V
±20V
5500 pF @ 10 V
205W (Tc)
-
TPW1R306PL,L1Q
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
5,864 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerWDFN
N-Channel
60 V
-
175°C
MOSFET (Metal Oxide)
-
260A (Tc)
8-DSOP Advance
U-MOSIX-H
4.5V, 10V
1.29mOhm @ 50A, 10V
2.5V @ 1mA
91 nC @ 10 V
±20V
8100 pF @ 30 V
960mW (Ta), 170W (Tc)
-
TPHR6503PL1,LQ
1+
$1.9268
5+
$1.8197
10+
$1.7127
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
30 V
-
175°C
MOSFET (Metal Oxide)
-
150A (Tc)
8-SOP Advance (5x5.75)
U-MOSIX-H
4.5V, 10V
0.65mOhm @ 50A, 10V
2.1V @ 1mA
110 nC @ 10 V
±20V
10000 pF @ 15 V
960mW (Ta), 210W (Tc)
-
TPHR8504PL,L1Q
1+
$0.9634
5+
$0.9099
10+
$0.8563
Quantity
1,052 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
40 V
-
175°C (TJ)
MOSFET (Metal Oxide)
-
150A (Tc)
8-SOP Advance (5x5)
U-MOSIX-H
4.5V, 10V
0.85mOhm @ 50A, 10V
2.4V @ 1mA
103 nC @ 10 V
±20V
9600 pF @ 20 V
1W (Ta), 170W (Tc)
-
TPH4R008QM,LQ
POWER MOSFET TRANSISTOR SOP8-ADV
1+
$1.0623
5+
$1.0032
10+
$0.9442
Quantity
500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
80 V
-
175°C
MOSFET (Metal Oxide)
-
86A (Tc)
8-SOP Advance (5x5.75)
U-MOSIX-H
6V, 10V
4mOhm @ 43A, 10V
3.5V @ 600µA
57 nC @ 10 V
±20V
5300 pF @ 40 V
960mW (Ta), 170W (Tc)
-
TPH2R506PL,L1Q
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
103 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
60 V
-
175°C (TJ)
MOSFET (Metal Oxide)
-
100A (Tc)
8-SOP Advance (5x5)
U-MOSIX-H
4.5V, 10V
4.4mOhm @ 30A, 4.5V
2.5V @ 500µA
60 nC @ 10 V
±20V
5435 pF @ 30 V
132W (Tc)
-
TK8R2E06PL,S1X
PB-F POWER MOSFET TRANSISTOR TO-
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
60 V
-
175°C
MOSFET (Metal Oxide)
-
50A (Tc)
TO-220
U-MOSIX-H
4.5V, 10V
8.2mOhm @ 25A, 10V
2.5V @ 300µA
28 nC @ 10 V
±20V
1990 pF @ 30 V
81W (Tc)
-
TKR74F04PB,LXGQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
40 V
-
175°C
MOSFET (Metal Oxide)
-
250A (Ta)
TO-220SM(W)
U-MOSIX-H
6V, 10V
0.74mOhm @ 125A, 10V
3V @ 1mA
227 nC @ 10 V
±20V
14200 pF @ 10 V
375W (Tc)
-
TPN2R903PL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
30 V
-
175°C
MOSFET (Metal Oxide)
-
70A (Tc)
8-TSON Advance (3.1x3.1)
U-MOSIX-H
4.5V, 10V
2.9mOhm @ 35A, 10V
2.1V @ 200µA
26 nC @ 10 V
±20V
2300 pF @ 15 V
630mW (Ta), 75W (Tc)
-
TPN4R806PL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
60 V
-
175°C
MOSFET (Metal Oxide)
-
72A (Tc)
8-TSON Advance (3.1x3.1)
U-MOSIX-H
4.5V, 10V
3.5mOhm @ 36A, 10V
2.5V @ 300µA
29 nC @ 10 V
±20V
2770 pF @ 30 V
630mW (Ta), 104W (Tc)
-
TPH2R003PL,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
30 V
-
175°C
MOSFET (Metal Oxide)
-
100A (Tc)
8-SOP Advance (5x5)
U-MOSIX-H
4.5V, 10V
2mOhm @ 50A, 10V
2.1V @ 500µA
86 nC @ 10 V
±20V
6410 pF @ 15 V
830mW (Ta), 116W (Tc)
-
TPHR9203PL1,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
30 V
-
175°C
MOSFET (Metal Oxide)
-
150A (Tc)
8-SOP Advance (5x5.75)
U-MOSIX-H
4.5V, 10V
0.92mOhm @ 50A, 10V
2.1V @ 500µA
81 nC @ 10 V
±20V
7540 pF @ 15 V
960mW (Ta), 170W (Tc)
-
TPH1R306PL1,LQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
60 V
-
175°C
MOSFET (Metal Oxide)
-
100A (Tc)
8-SOP Advance (5x5.75)
U-MOSIX-H
4.5V, 10V
1.34mOhm @ 50A, 10V
2.5V @ 1mA
91 nC @ 10 V
±20V
8100 pF @ 30 V
960mW (Ta), 210W (Tc)
-
TK3R1E04PL,S1X
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
40 V
-
175°C (TJ)
MOSFET (Metal Oxide)
-
100A (Tc)
TO-220
U-MOSIX-H
4.5V, 10V
3.8mOhm @ 30A, 4.5V
2.4V @ 500µA
63.4 nC @ 10 V
±20V
4670 pF @ 20 V
87W (Tc)
-
SSM6K514NU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
N-Channel
40 V
-
150°C
MOSFET (Metal Oxide)
-
12A (Ta)
6-UDFNB (2x2)
U-MOSIX-H
4.5V, 10V
11.6mOhm @ 4A, 10V
2.4V @ 100µA
7.5 nC @ 4.5 V
±20V
1110 pF @ 20 V
2.5W (Ta)
-
TPN1R603PL,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
30 V
-
175°C
MOSFET (Metal Oxide)
-
80A (Tc)
8-TSON Advance (3.1x3.1)
U-MOSIX-H
4.5V, 10V
1.6mOhm @ 40A, 10V
2.1V @ 300µA
41 nC @ 10 V
±20V
3900 pF @ 15 V
104W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.