aMOS5™ Series, Single FETs, MOSFETs

Results:
78
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Vgs (Max)
FET Feature
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining78
Applied Filters:
aMOS5™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
AOD600A70
1+
$0.2789
5+
$0.2634
10+
$0.2479
Quantity
13,703 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
3.5V @ 250µA
aMOS5™
700 V
8.5A (Tc)
10V
600mOhm @ 2.5A, 10V
15.5 nC @ 10 V
±20V
870 pF @ 100 V
104W (Tc)
-
AOD360A70
1+
$1.8583
5+
$1.7551
10+
$1.6518
Quantity
5,438 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
4V @ 250µA
aMOS5™
700 V
12A (Tc)
10V
360mOhm @ 6A, 10V
22.5 nC @ 10 V
±20V
1360 pF @ 100 V
138W (Tc)
-
AOD600A70R
1+
$0.3296
5+
$0.3113
10+
$0.2930
Quantity
1,102 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
4V @ 250µA
aMOS5™
700 V
8.5A (Tc)
10V
600mOhm @ 2.5A, 10V
15.5 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
AOB380A60CL
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
3.8V @ 250µA
aMOS5™
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
20 nC @ 10 V
±20V
955 pF @ 100 V
131W (Tc)
-
AONS850A70
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
-
8-DFN-EP (5x6)
MOSFET (Metal Oxide)
-
4.1V @ 250µA
aMOS5™
700 V
1.5A (Ta), 7.6A (Tc)
10V
850mOhm @ 1.4A, 10V
11.5 nC @ 10 V
±20V
675 pF @ 100 V
4.1W (Ta), 113W (Tc)
-
AOWF600A70
MOSFET N-CH 700V 8.5A TO262F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-
TO-262F
MOSFET (Metal Oxide)
-
3.5V @ 250µA
aMOS5™
700 V
8.5A (Tj)
10V
600mOhm @ 2.5A, 10V
15.5 nC @ 10 V
±20V
870 pF @ 100 V
25W (Tc)
-
AOTF360A70L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
TO-220F
MOSFET (Metal Oxide)
-
4V @ 250µA
aMOS5™
700 V
12A (Tj)
10V
360mOhm @ 6A, 10V
22.5 nC @ 10 V
±20V
1360 pF @ 100 V
29.5W (Tc)
-
AOD950A70
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
4.1V @ 250µA
aMOS5™
700 V
5A (Tc)
10V
950mOhm @ 1A, 10V
10 nC @ 10 V
±20V
461 pF @ 100 V
56.5W (Tc)
-
AOD450A70
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
3.6V @ 250µA
aMOS5™
700 V
11A (Tc)
10V
450mOhm @ 2.3A, 10V
20 nC @ 10 V
±20V
1115 pF @ 100 V
125W (Tc)
-
AOT600A70L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
3.5V @ 250µA
aMOS5™
700 V
8.5A (Tc)
10V
600mOhm @ 2.5A, 10V
15.5 nC @ 10 V
±20V
870 pF @ 100 V
104W (Tc)
-
AOT600A70FL
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
4V @ 250µA
aMOS5™
700 V
8.5A (Tc)
10V
600mOhm @ 2.5A, 10V
14.5 nC @ 10 V
±20V
900 pF @ 100 V
104W (Tc)
-
AOWF360A70
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-
TO-262F
MOSFET (Metal Oxide)
-
4V @ 250µA
aMOS5™
700 V
12A (Tj)
10V
360mOhm @ 6A, 10V
22.5 nC @ 10 V
±20V
1360 pF @ 100 V
29.5W (Tc)
-
AOB600A60L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
3.5V @ 250µA
aMOS5™
600 V
8A (Tc)
10V
600mOhm @ 2.1A, 10V
11.5 nC @ 10 V
±20V
608 pF @ 100 V
96W (Tc)
-
AOWF190A60C
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-
TO-262F
MOSFET (Metal Oxide)
-
4.6V @ 250µA
aMOS5™
600 V
20A (Tj)
10V
190mOhm @ 7.6A, 10V
34 nC @ 10 V
±20V
1935 pF @ 100 V
27W (Tc)
-
AOT190A60L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
4.6V @ 250µA
aMOS5™
600 V
20A (Tc)
10V
170mOhm @ 7.6A, 10V
34 nC @ 10 V
±20V
1935 pF @ 100 V
208W (Tc)
-
AOT380A60L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
TO-220
MOSFET (Metal Oxide)
-
3.8V @ 250µA
aMOS5™
600 V
11A (Tc)
10V
380mOhm @ 5.5A, 10V
20 nC @ 10 V
±20V
955 pF @ 100 V
131W (Tc)
-
AOWF190A60
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-
TO-262F
MOSFET (Metal Oxide)
-
4V @ 250µA
aMOS5™
600 V
20A (Tc)
10V
190mOhm @ 7.6A, 10V
34 nC @ 10 V
±20V
1935 pF @ 100 V
27W (Tc)
-
AONV210A60
MOSFET N-CH 600V 4.1A/20A 4DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
4-DFN (8x8)
MOSFET (Metal Oxide)
-
4V @ 250µA
aMOS5™
600 V
4.1A (Ta), 20A (Tc)
10V
210mOhm @ 7.6A, 10V
34 nC @ 10 V
±20V
1935 pF @ 100 V
8.3W (Ta), 208W (Tc)
-
AONV140A60
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
4-DFN (8x8)
MOSFET (Metal Oxide)
-
4.5V @ 250µA
aMOS5™
600 V
4.9A (Ta), 28A (Tc)
10V
140mOhm @ 14A, 10V
44 nC @ 10 V
±20V
2995 pF @ 100 V
8.3W (Ta), 312W (Tc)
-
AOK065A60
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247
MOSFET (Metal Oxide)
-
-
aMOS5™
600 V
4.1A (Ta), 20A (Tc)
10V
-
34 nC @ 10 V
20V
1935 pF @ 100 V
8.3W (Ta), 208W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.