UltraFET® Series, Single FETs, MOSFETs

Results:
51
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Operating Temperature
Vgs(th) (Max) @ Id
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining51
Applied Filters:
UltraFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologySeriesFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
ISL9N306AS3ST
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
75A (Tc)
4.5V, 10V
6mOhm @ 75A, 10V
90 nC @ 10 V
±20V
3400 pF @ 15 V
125W (Ta)
-
HUF76413D3
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
20A (Tc)
4.5V, 10V
49mOhm @ 20A, 10V
20 nC @ 10 V
±16V
645 pF @ 25 V
60W (Tc)
-
HUF76419D3STR4921
20A, 60V, 0.043OHM, N CHANNEL ,
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
20A (Tc)
4.5V, 10V
37mOhm @ 20A, 10V
27.5 nC @ 10 V
±16V
900 pF @ 25 V
75W (Tc)
-
HP4410DYT
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
1V @ 250µA
10A (Ta)
4.5V, 10V
135mOhm @ 10A, 10V
60 nC @ 10 V
±16V
1600 pF @ 25 V
2.5W (Ta)
-
ISL9N306AP3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
75A (Tc)
4.5V, 10V
6mOhm @ 75A, 10V
90 nC @ 10 V
±20V
3400 pF @ 15 V
125W (Ta)
-
HUF75631SK8T_NB82083
N CHANNEL ULTRAFET 100V, 33A, 4
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
100 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
5.5A (Ta)
10V
39mOhm @ 5.5A, 10V
79 nC @ 20 V
±20V
1225 pF @ 25 V
2.5W (Ta)
-
HUF75823D3S
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
150 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
14A (Tc)
10V
150mOhm @ 14A, 10V
54 nC @ 20 V
±20V
800 pF @ 25 V
85W (Tc)
-
HUF76437P3
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
71A (Tc)
4.5V, 10V
14mOhm @ 71A, 10V
71 nC @ 10 V
±16V
2230 pF @ 25 V
155W (Tc)
-
HUF75344P3_NL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220-3
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
75A (Tc)
10V
8mOhm @ 75A, 10V
210 nC @ 20 V
±20V
3200 pF @ 25 V
285W (Tc)
-
ISL9N304AS3ST
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
75A (Tc)
4.5V, 10V
4.5mOhm @ 75A, 10V
105 nC @ 10 V
±20V
4075 pF @ 15 V
145W (Ta)
-
HUF75939S3ST
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
200 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
22A (Tc)
10V
125mOhm @ 22A, 10V
152 nC @ 20 V
±20V
2200 pF @ 25 V
180W (Tc)
-
HUF76137P3
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220AB
30 V
-40°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
75A (Tc)
4.5V, 10V
9mOhm @ 75A, 10V
72 nC @ 10 V
±20V
2100 pF @ 25 V
145W (Tc)
-
HUF75631SK8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
100 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
5.5A (Ta)
10V
39mOhm @ 5.5A, 10V
79 nC @ 20 V
±20V
1225 pF @ 25 V
2.5W (Ta)
-
ISL9N306AD3
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
50A (Tc)
4.5V, 10V
6mOhm @ 50A, 10V
90 nC @ 10 V
±20V
3400 pF @ 15 V
125W (Ta)
-
HUF75339S3ST
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
75A (Tc)
10V
12mOhm @ 75A, 10V
130 nC @ 20 V
±20V
2000 pF @ 25 V
200W (Tc)
-
HUFA75333G3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
66A (Tc)
10V
16mOhm @ 66A, 10V
85 nC @ 20 V
±20V
1300 pF @ 25 V
150W (Tc)
-
ISL9N2357D3ST
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
35A (Tc)
10V
7mOhm @ 35A, 10V
258 nC @ 20 V
±20V
5600 pF @ 25 V
100W (Tc)
-
HUF76645S3ST
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
100 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
75A (Tc)
4.5V, 10V
14mOhm @ 75A, 10V
153 nC @ 10 V
±16V
4400 pF @ 25 V
310W (Tc)
-
HUFA75329G3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
4V @ 250µA
49A (Tc)
10V
24mOhm @ 49A, 10V
75 nC @ 20 V
±20V
1060 pF @ 25 V
128W (Tc)
-
HUF76105SK8T
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
UltraFET®
-
3V @ 250µA
5.5A (Ta)
4.5V, 10V
50mOhm @ 5.5A, 10V
11 nC @ 10 V
±20V
325 pF @ 25 V
2.5W (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.