TrenchFET® Gen IV Series, Single FETs, MOSFETs

Results:
248
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining248
Applied Filters:
TrenchFET® Gen IV
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdPackage / CaseSupplier Device PackageDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SIRA80DP-T1-RE3
MOSFET N-CH 30V 100A PPAK SO-8
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
106,403 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
100A (Tc)
2.2V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
0.62mOhm @ 20A, 10V
188 nC @ 10 V
+20V, -16V
9530 pF @ 15 V
104W (Tc)
-
SIR106ADP-T1-RE3
MOSFET N-CH 100V 16.1A/65.8 PPAK
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
102,048 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
16.1A (Ta), 65.8 (Tc)
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
7.5V, 10V
8mOhm @ 15A, 10V
52 nC @ 10 V
±20V
2440 pF @ 50 V
5W (Ta), 83.3W (Tc)
-
SI4459BDY-T1-GE3
MOSFET P-CH 30V 20.5A/27.8A 8SO
1+
$1.1662
5+
$1.1014
10+
$1.0366
Quantity
80,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
20.5A (Ta), 27.8A (Tc)
2.2V @ 250µA
8-SOIC (0.154", 3.90mm Width)
8-SO
4.5V, 10V
4.9mOhm @ 15A, 10V
84 nC @ 10 V
+20V, -16V
3490 pF @ 15 V
3.1W (Ta), 5.6W (Tc)
-
SISA88DN-T1-GE3
MOSFET N-CH 30V 16.2A/40.5A PPAK
1+
$0.1521
5+
$0.1437
10+
$0.1352
Quantity
77,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
16.2A (Ta), 40.5A (Tc)
2.4V @ 250µA
PowerPAK® 1212-8
PowerPAK® 1212-8
4.5V, 10V
6.7mOhm @ 10A, 10V
25.5 nC @ 10 V
+20V, -16V
985 pF @ 15 V
3.2W (Ta), 19.8W (Tc)
-
SISS32DN-T1-GE3
MOSFET N-CH 80V 17.4A/63A PPAK
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
60,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
80 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
17.4A (Ta), 63A (Tc)
3.8V @ 250µA
PowerPAK® 1212-8S
PowerPAK® 1212-8S
7.5V, 10V
7.2mOhm @ 10A, 10V
42 nC @ 10 V
±20V
1930 pF @ 40 V
5W (Ta), 65.7W (Tc)
-
SISS42LDN-T1-GE3
MOSFET N-CH 100V 11.3A/39A PPAK
1+
$0.8113
5+
$0.7662
10+
$0.7211
Quantity
57,259 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
11.3A (Ta), 39A (Tc)
2.5V @ 250µA
PowerPAK® 1212-8S
PowerPAK® 1212-8S
4.5V, 10V
14.9mOhm @ 15A, 10V
48 nC @ 10 V
±20V
2058 pF @ 50 V
4.8W (Ta), 57W (Tc)
-
SIRA60DP-T1-GE3
MOSFET N-CH 30V 100A PPAK SO-8
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
56,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
100A (Tc)
2.2V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
0.94mOhm @ 20A, 10V
60 nC @ 4.5 V
+20V, -16V
7650 pF @ 15 V
57W (Tc)
-
SI2308CDS-T1-GE3
MOSFET N-CH 60V 2.6A SOT23-3
1+
$0.2282
5+
$0.2155
10+
$0.2028
Quantity
53,490 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
2.6A (Tc)
3V @ 250µA
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
4.5V, 10V
144mOhm @ 1.9A, 10V
4 nC @ 10 V
±20V
105 pF @ 30 V
1.6W (Tc)
-
SIRA54DP-T1-GE3
MOSFET N-CH 40V 60A PPAK SO-8
1+
$0.5451
5+
$0.5148
10+
$0.4845
Quantity
44,990 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
40 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
60A (Tc)
2.3V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
2.35mOhm @ 15A, 10V
48 nC @ 4.5 V
+20V, -16V
5300 pF @ 20 V
36.7W (Tc)
-
SIR180DP-T1-RE3
MOSFET N-CH 60V 32.4A/60A PPAK
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
43,103 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
32.4A (Ta), 60A (Tc)
3.6V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
7.5V, 10V
2.05mOhm @ 10A, 10V
87 nC @ 10 V
±20V
4030 pF @ 30 V
5.4W (Ta), 83.3W (Tc)
-
SI3483DDV-T1-BE3
P-CHANNEL 30-V (D-S) MOSFET
1+
$0.3042
5+
$0.2873
10+
$0.2704
Quantity
40,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
6.4A (Ta), 8A (Tc)
2.2V @ 250µA
SOT-23-6 Thin, TSOT-23-6
6-TSOP
4.5V, 10V
31.2mOhm @ 5A, 10V
14.5 nC @ 10 V
+16V, -20V
580 pF @ 15 V
2W (Ta), 3W (Tc)
-
SIR188DP-T1-RE3
MOSFET N-CH 60V 25.5A/60A PPAK
1+
$1.2169
5+
$1.1493
10+
$1.0817
Quantity
36,290 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
25.5A (Ta), 60A (Tc)
3.6V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
7.5V, 10V
3.85mOhm @ 10A, 10V
44 nC @ 10 V
±20V
1920 pF @ 30 V
5W (Ta), 65.7W (Tc)
-
SIS862ADN-T1-GE3
MOSFET N-CH 60V 15.8A/52A PPAK
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
36,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
15.8A (Ta), 52A (Tc)
2.5V @ 250µA
PowerPAK® 1212-8
PowerPAK® 1212-8
4.5V, 10V
7.2mOhm @ 10A, 10V
30 nC @ 10 V
±20V
1235 pF @ 30 V
3.6W (Ta), 39W (Tc)
-
SIS110DN-T1-GE3
MOSFET N-CH 100V 5.2A/14.2A PPAK
1+
$0.9887
5+
$0.9338
10+
$0.8789
Quantity
35,293 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
5.2A (Ta), 14.2A (Tc)
4V @ 250µA
PowerPAK® 1212-8
PowerPAK® 1212-8
7.5V, 10V
54mOhm @ 4A, 10V
13 nC @ 10 V
±20V
550 pF @ 50 V
3.2W (Ta), 24W (Tc)
-
SQS160ELNW-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
32,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
-55°C ~ 175°C (TJ)
N-Channel
60 V
Automotive
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
141A (Tc)
2.5V @ 250µA
PowerPAK® 1212-8SLW
PowerPAK® 1212-8SLW
4.5V, 10V
4.3mOhm @ 10A, 10V
71 nC @ 10 V
±20V
3866 pF @ 25 V
113W (Tc)
AEC-Q101
SIRA10BDP-T1-GE3
MOSFET N-CH 30V 30A/60A PPAK SO8
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
30,769 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
30A (Ta), 60A (Tc)
2.4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
3.6mOhm @ 10A, 10V
36.2 nC @ 10 V
+20V, -16V
1710 pF @ 15 V
5W (Ta), 43W (Tc)
-
SIR626ADP-T1-RE3
MOSFET N-CH 60V 40.4A/165A PPAK
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
30,016 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
40.4A (Ta), 165A (Tc)
3.5V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
6V, 10V
1.75mOhm @ 20A, 10V
83 nC @ 10 V
±20V
3770 pF @ 30 V
6.25W (Ta), 104W (Tc)
-
SIA471DJ-T1-GE3
MOSFET P-CH 30V 12.9A/30.3A PPAK
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
29,525 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
12.9A (Ta), 30.3A (Tc)
2.5V @ 250µA
PowerPAK® SC-70-6
PowerPAK® SC-70-6
4.5V, 10V
14mOhm @ 10A, 10V
27.8 nC @ 10 V
+16V, -20V
1170 pF @ 15 V
3.5W (Ta), 19.2W (Tc)
-
SIR186LDP-T1-RE3
N-CHANNEL 60-V (D-S) MOSFET POWE
1+
$0.9634
5+
$0.9099
10+
$0.8563
Quantity
26,196 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
23.8A (Ta), 80.3A (Tc)
2.5V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
4.4mOhm @ 15A, 10V
48 nC @ 10 V
±20V
1980 pF @ 30 V
5W (Ta), 57W (Tc)
-
SI7454FDP-T1-RE3
N-CHANNEL 100-V (D-S) MOSFET POW
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
23,684 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
MOSFET (Metal Oxide)
TrenchFET® Gen IV
-
7.2A (Ta), 23.5A (Tc)
2.4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
4.5V, 10V
29.5mOhm @ 10A, 10V
26.5 nC @ 10 V
±20V
1110 pF @ 50 V
3.6W (Ta), 39W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.