CoolMOS™ P7 Series, Single FETs, MOSFETs

Results:
186
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Type
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Technology
Results remaining186
Applied Filters:
CoolMOS™ P7
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD60R600P7SAUMA1
MOSFET N-CH 600V 6A TO252-3
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
79,250 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
6A (Tc)
600 V
10V
600mOhm @ 1.7A, 10V
4V @ 80µA
9 nC @ 10 V
±20V
363 pF @ 400 V
30W (Tc)
-
IPA70R360P7SXKSA1
MOSFET N-CH 700V 12.5A TO220
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
59,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
PG-TO220 Full Pack
CoolMOS™ P7
MOSFET (Metal Oxide)
-
12.5A (Tc)
700 V
10V
360mOhm @ 3A, 10V
3.5V @ 150µA
16.4 nC @ 10 V
±16V
517 pF @ 400 V
26.4W (Tc)
-
IPD70R1K4P7SAUMA1
MOSFET N-CH 700V 4A TO252-3
1+
$0.3397
5+
$0.3208
10+
$0.3020
Quantity
52,181 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
4A (Tc)
700 V
10V
1.4Ohm @ 700mA, 10V
3.5V @ 40µA
4.7 nC @ 10 V
±16V
158 pF @ 400 V
23W (Tc)
-
IPA60R060P7XKSA1
MOSFET N-CHANNEL 600V 48A TO220
1+
$12.2958
5+
$11.6127
10+
$10.9296
Quantity
40,849 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
PG-TO220-FP
CoolMOS™ P7
MOSFET (Metal Oxide)
-
48A (Tc)
600 V
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
67 nC @ 10 V
±20V
2895 pF @ 400 V
29W (Tc)
-
IPA80R600P7XKSA1
MOSFET N-CHANNEL 800V 8A TO220
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
35,070 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
PG-TO220-FP
CoolMOS™ P7
MOSFET (Metal Oxide)
-
8A (Tc)
800 V
10V
600mOhm @ 3.4A, 10V
3.5V @ 170µA
20 nC @ 10 V
±20V
570 pF @ 500 V
28W (Tc)
-
IPN80R750P7ATMA1
MOSFET N-CH 800V 7A SOT223
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
33,264 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223
CoolMOS™ P7
MOSFET (Metal Oxide)
-
7A (Tc)
800 V
10V
750mOhm @ 2.7A, 10V
3.5V @ 140µA
17 nC @ 10 V
±20V
460 pF @ 500 V
7.2W (Tc)
-
IPN80R2K4P7ATMA1
MOSFET N-CH 800V 2.5A SOT223
1+
$0.5780
5+
$0.5459
10+
$0.5138
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223
CoolMOS™ P7
MOSFET (Metal Oxide)
-
2.5A (Tc)
800 V
10V
2.4Ohm @ 800mA, 10V
3.5V @ 40µA
7.5 nC @ 10 V
±20V
150 pF @ 500 V
6.3W (Tc)
-
IPD80R2K4P7ATMA1
MOSFET N-CH 800V 2.5A TO252-3
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
25,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
2.5A (Tc)
800 V
10V
2.4Ohm @ 800mA, 10V
3.5V @ 40µA
7.5 nC @ 10 V
±20V
150 pF @ 500 V
22W (Tc)
-
IPN70R360P7SATMA1
MOSFET N-CH 700V 12.5A SOT223
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
20,215 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223
CoolMOS™ P7
MOSFET (Metal Oxide)
-
12.5A (Tc)
700 V
10V
360mOhm @ 3A, 10V
3.5V @ 150µA
16.4 nC @ 10 V
±16V
517 pF @ 400 V
7.2W (Tc)
-
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
1+
$0.6085
5+
$0.5746
10+
$0.5408
Quantity
17,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
12.5A (Tc)
700 V
10V
360mOhm @ 3A, 10V
3.5V @ 150µA
16.4 nC @ 10 V
±16V
517 pF @ 400 V
59.4W (Tc)
-
IPD95R2K0P7ATMA1
MOSFET N-CH 950V 4A TO252-3
1+
$1.9014
5+
$1.7958
10+
$1.6901
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
4A (Tc)
950 V
10V
2Ohm @ 1.7A, 10V
3.5V @ 80µA
10 nC @ 10 V
±20V
330 pF @ 400 V
37W (Tc)
-
IPB60R045P7ATMA1
MOSFET N-CH 600V 61A TO263-3-2
1+
$81.1268
5+
$76.6197
10+
$72.1127
Quantity
8,926 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3-2
CoolMOS™ P7
MOSFET (Metal Oxide)
-
61A (Tc)
600 V
10V
45mOhm @ 22.5A, 10V
4V @ 1.08mA
90 nC @ 10 V
±20V
3891 pF @ 400 V
201W (Tc)
-
IPN70R2K0P7SATMA1
MOSFET N-CH 700V 3A SOT223
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
8,760 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223
CoolMOS™ P7
MOSFET (Metal Oxide)
-
3A (Tc)
700 V
10V
2Ohm @ 500mA, 10V
3.5V @ 30µA
3.8 nC @ 10 V
±16V
130 pF @ 400 V
6W (Tc)
-
IPZA60R037P7XKSA1
MOSFET N-CH 600V 76A TO247-4
1+
$34.2254
5+
$32.3239
10+
$30.4225
Quantity
8,160 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
-
PG-TO247-4
CoolMOS™ P7
MOSFET (Metal Oxide)
-
76A (Tc)
600 V
10V
37mOhm @ 29.5A, 10V
4V @ 1.48mA
121 nC @ 10 V
±20V
5243 pF @ 400 V
255W (Tc)
-
IPB60R180P7ATMA1
MOSFET N-CH 600V 18A D2PAK
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
8,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
18A (Tc)
600 V
10V
180mOhm @ 5.6A, 10V
4V @ 280µA
25 nC @ 10 V
±20V
1081 pF @ 400 V
72W (Tc)
-
IPN80R1K4P7ATMA1
MOSFET N-CH 800V 4A SOT223
1+
$0.7149
5+
$0.6752
10+
$0.6355
Quantity
7,525 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223
CoolMOS™ P7
MOSFET (Metal Oxide)
-
4A (Tc)
800 V
10V
1.4Ohm @ 1.4A, 10V
3.5V @ 70µA
10 nC @ 10 V
±20V
250 pF @ 500 V
7W (Tc)
-
IPL60R105P7AUMA1
MOSFET N-CH 600V 33A 4VSON
1+
$22.8169
5+
$21.5493
10+
$20.2817
Quantity
7,336 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
CoolMOS™ P7
MOSFET (Metal Oxide)
-
33A (Tc)
600 V
10V
105mOhm @ 10.5A, 10V
4V @ 530µA
45 nC @ 10 V
±20V
1952 pF @ 400 V
137W (Tc)
-
IPB60R080P7ATMA1
MOSFET N-CH 600V 37A D2PAK
1+
$8.1127
5+
$7.6620
10+
$7.2113
Quantity
6,867 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
37A (Tc)
600 V
10V
80mOhm @ 11.8A, 10V
4V @ 590µA
51 nC @ 10 V
±20V
2180 pF @ 400 V
129W (Tc)
-
IPN60R360P7SATMA1
MOSFET N-CHANNEL 600V 9A SOT223
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
6,351 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223
CoolMOS™ P7
MOSFET (Metal Oxide)
-
9A (Tc)
600 V
10V
360mOhm @ 2.7A, 10V
4V @ 140µA
13 nC @ 10 V
±20V
555 pF @ 400 V
7W (Tc)
-
IPP60R600P7XKSA1
MOSFET N-CH 650V 6A TO220-3
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
6,080 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
PG-TO220-3
CoolMOS™ P7
MOSFET (Metal Oxide)
-
6A (Tc)
650 V
10V
600mOhm @ 1.7A, 10V
4V @ 80µA
9 nC @ 10 V
±20V
363 pF @ 400 V
30W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.