HEXFET®, StrongIRFET™ Series, Single FETs, MOSFETs

Results:
112
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining112
Applied Filters:
HEXFET®, StrongIRFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologySupplier Device PackageFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsSeriesDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IRFS7537TRLPBF
MOSFET N-CH 60V 173A D2PAK
1+
¥0.8873
5+
¥0.8380
10+
¥0.7887
Quantity
162,932 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO263-3
-
173A (Tc)
3.3mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 150µA
210 nC @ 10 V
±20V
7020 pF @ 25 V
230W (Tc)
-
IRFH7446TRPBF
MOSFET N-CH 40V 85A 8PQFN
1+
¥0.3042
5+
¥0.2873
10+
¥0.2704
Quantity
130,822 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-TQFN Exposed Pad
40 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
8-PQFN (5x6)
-
85A (Tc)
3.3mOhm @ 50A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 100µA
98 nC @ 10 V
±20V
3174 pF @ 25 V
78W (Tc)
-
IRFB7446PBF
MOSFET N-CH 40V 120A TO220AB
1+
¥0.4310
5+
¥0.4070
10+
¥0.3831
Quantity
107,818 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220AB
-
120A (Tc)
3.3mOhm @ 70A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 100µA
93 nC @ 10 V
±20V
3183 pF @ 25 V
99W (Tc)
-
IRFB7534PBF
MOSFET N-CH 60V 195A TO220AB
1+
¥0.9887
5+
¥0.9338
10+
¥0.8789
Quantity
98,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220AB
-
195A (Tc)
2.4mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 250µA
279 nC @ 10 V
±20V
10034 pF @ 25 V
294W (Tc)
-
IRFS7440TRLPBF
MOSFET N CH 40V 120A D2PAK
1+
¥0.4310
5+
¥0.4070
10+
¥0.3831
Quantity
68,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-263 (D2Pak)
-
120A (Tc)
2.5mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 100µA
135 nC @ 10 V
±20V
4730 pF @ 25 V
208W (Tc)
-
IRFP7530PBF
MOSFET N-CH 60V 195A TO247
1+
¥2.1549
5+
¥2.0352
10+
¥1.9155
Quantity
58,888 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-247
-
195A (Tc)
2mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 250µA
411 nC @ 10 V
±20V
13703 pF @ 25 V
341W (Tc)
-
IRFB7434PBF
MOSFET N-CH 40V 195A TO220AB
1+
¥0.7606
5+
¥0.7183
10+
¥0.6761
Quantity
51,664 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220AB
-
195A (Tc)
1.6mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 250µA
324 nC @ 10 V
±20V
10820 pF @ 25 V
294W (Tc)
-
IRFS7430TRLPBF
MOSFET N-CH 40V 195A D2PAK
1+
¥1.6479
5+
¥1.5563
10+
¥1.4648
Quantity
46,977 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
D2PAK
-
195A (Tc)
1.2mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 250µA
460 nC @ 10 V
±20V
14240 pF @ 25 V
375W (Tc)
-
IRFS7530TRL7PP
MOSFET N CH 60V 240A D2PAK
1+
¥2.1549
5+
¥2.0352
10+
¥1.9155
Quantity
46,306 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO263-7
-
240A (Tc)
1.4mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 250µA
354 nC @ 10 V
±20V
12960 pF @ 25 V
375W (Tc)
-
IRFH7004TRPBF
MOSFET N-CH 40V 100A 8PQFN
1+
¥0.7352
5+
¥0.6944
10+
¥0.6535
Quantity
42,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-VQFN Exposed Pad
40 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
8-PQFN (5x6)
-
100A (Tc)
1.4mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 150µA
194 nC @ 10 V
±20V
6419 pF @ 25 V
156W (Tc)
-
IRFB7537PBF
MOSFET N-CH 60V 173A TO220AB
1+
¥0.7099
5+
¥0.6704
10+
¥0.6310
Quantity
40,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220AB
-
173A (Tc)
3.3mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 150µA
210 nC @ 10 V
±20V
7020 pF @ 25 V
230W (Tc)
-
IRFB7734PBF
MOSFET N-CH 75V 183A TO220AB
1+
¥1.1408
5+
¥1.0775
10+
¥1.0141
Quantity
38,797 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
75 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220AB
-
183A (Tc)
3.5mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 250µA
270 nC @ 10 V
±20V
10150 pF @ 25 V
290W (Tc)
-
IRF40R207
MOSFET N-CH 40V 56A TO252
1+
¥2.0282
5+
¥1.9155
10+
¥1.8028
Quantity
37,904 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO252-3
-
56A (Tc)
5.1mOhm @ 55A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 50µA
68 nC @ 10 V
±20V
2110 pF @ 25 V
83W (Tc)
-
IRFB7440PBF
MOSFET N-CH 40V 120A TO220AB
1+
¥0.4817
5+
¥0.4549
10+
¥0.4282
Quantity
26,178 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220AB
-
120A (Tc)
2.5mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 100µA
135 nC @ 10 V
±20V
4730 pF @ 25 V
143W (Tc)
-
IRFB7545PBF
MOSFET N-CH 60V 95A TO220
1+
¥0.8873
5+
¥0.8380
10+
¥0.7887
Quantity
24,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220
-
95A (Tc)
5.9mOhm @ 57A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 100µA
110 nC @ 10 V
±20V
4010 pF @ 25 V
125W (Tc)
-
IRFS7437TRL7PP
MOSFET N-CH 40V 195A D2PAK
1+
¥1.3944
5+
¥1.3169
10+
¥1.2394
Quantity
23,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
D2PAK (7-Lead)
-
195A (Tc)
1.4mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 150µA
225 nC @ 10 V
±20V
7437 pF @ 25 V
231W (Tc)
-
IRFS7434TRLPBF
MOSFET N-CH 40V 195A D2PAK
1+
¥1.6479
5+
¥1.5563
10+
¥1.4648
Quantity
23,745 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
D2PAK
-
195A (Tc)
1.6mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 250µA
324 nC @ 10 V
±20V
10820 pF @ 25 V
294W (Tc)
-
IRFS7434TRL7PP
MOSFET N-CH 40V 240A D2PAK-7
1+
¥2.1549
5+
¥2.0352
10+
¥1.9155
Quantity
22,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
40 V
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
D2PAK-7
-
240A (Tc)
1mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.9V @ 250µA
315 nC @ 10 V
±20V
10250 pF @ 25 V
245W (Tc)
-
IRFB7530PBF
MOSFET N-CH 60V 195A TO220AB
1+
¥1.8254
5+
¥1.7239
10+
¥1.6225
Quantity
18,584 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
TO-220AB
-
195A (Tc)
2mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 250µA
411 nC @ 10 V
±20V
13703 pF @ 25 V
375W (Tc)
-
IRFS7530TRLPBF
MOSFET N CH 60V 195A D2PAK
1+
¥2.5352
5+
¥2.3944
10+
¥2.2535
Quantity
16,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO263-2
-
195A (Tc)
2mOhm @ 100A, 10V
HEXFET®, StrongIRFET™
6V, 10V
3.7V @ 250µA
411 nC @ 10 V
±20V
13703 pF @ 25 V
375W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.