MDmesh™ M6 Series, Single FETs, MOSFETs

Results:
68
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Mounting Type
Vgs (Max)
FET Feature
Grade
Qualification
Technology
Results remaining68
Applied Filters:
MDmesh™ M6
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
STO36N60M6
MOSFET N-CH 600V 30A TOLL
1+
¥22.5000
5+
¥21.2500
10+
¥20.0000
Quantity
42,650 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
30A (Tc)
MDmesh™ M6
600 V
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44.3 nC @ 10 V
±25V
1960 pF @ 100 V
230W (Tc)
TOLL (HV)
8-PowerSFN
-
STB36N60M6
MOSFET N-CH 600V 30A D2PAK
1+
¥23.0400
5+
¥21.7600
10+
¥20.4800
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
30A (Tc)
MDmesh™ M6
600 V
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44.3 nC @ 10 V
±25V
1960 pF @ 100 V
208W (Tc)
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
STL13N60M6
MOSFET N-CH 600V 7A POWERFLAT HV
1+
¥7.2000
5+
¥6.8000
10+
¥6.4000
Quantity
4,335 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
7A (Tc)
MDmesh™ M6
600 V
10V
415mOhm @ 3.5A, 10V
4.75V @ 250µA
13 nC @ 10 V
±25V
509 pF @ 100 V
52W (Tc)
PowerFlat™ (5x6) HV
8-PowerVDFN
-
STP33N60DM6
MOSFET N-CH 600V 25A TO220
1+
¥90.0000
5+
¥85.0000
10+
¥80.0000
Quantity
3,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
25A (Tc)
MDmesh™ M6
600 V
10V
128mOhm @ 12.5A, 10V
4.75V @ 250µA
35 nC @ 10 V
±25V
1500 pF @ 100 V
190W (Tc)
TO-220
TO-220-3
-
STP36N60M6
MOSFET N-CHANNEL 600V 30A TO220
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
Quantity
2,740 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
30A (Tc)
MDmesh™ M6
600 V
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44.3 nC @ 10 V
±25V
1960 pF @ 100 V
208W (Tc)
TO-220
TO-220-3
-
STW75N60M6-4
MOSFET N-CH 600V 72A TO247-4
1+
¥160.2000
5+
¥151.3000
10+
¥142.4000
Quantity
1,520 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
72A (Tc)
MDmesh™ M6
600 V
10V
36mOhm @ 36A, 10V
4.75V @ 250µA
106 nC @ 10 V
±25V
4850 pF @ 100 V
446W (Tc)
TO-247-4
TO-247-4
-
STW36N60M6
MOSFET N-CHANNEL 600V 30A TO247
1+
¥270.0000
5+
¥255.0000
10+
¥240.0000
Quantity
1,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
30A (Tc)
MDmesh™ M6
600 V
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44.3 nC @ 10 V
±25V
1960 pF @ 100 V
208W (Tc)
TO-247-3
TO-247-3
-
STF24N60M6
MOSFET N-CH 600V TO220FP
1+
¥243.0000
5+
¥229.5000
10+
¥216.0000
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
17A (Tj)
MDmesh™ M6
600 V
10V
190mOhm @ 8.5A, 10V
4.75V @ 250µA
23 nC @ 10 V
±25V
960 pF @ 100 V
30W (Tc)
TO-220FP
TO-220-3 Full Pack
-
STB18N60M6
MOSFET N-CH 600V 13A D2PAK
1+
¥99.0000
5+
¥93.5000
10+
¥88.0000
Quantity
800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
13A (Tc)
MDmesh™ M6
600 V
10V
280mOhm @ 6.5A, 10V
4.75V @ 250µA
16.8 nC @ 10 V
±25V
650 pF @ 100 V
110W (Tc)
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
STL47N60M6
MOSFET N-CH 600V 31A PWRFLAT HV
1+
¥144.0000
5+
¥136.0000
10+
¥128.0000
Quantity
695 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
31A (Tc)
MDmesh™ M6
600 V
10V
80mOhm @ 15.5A, 10V
4.75V @ 250µA
57 nC @ 10 V
±25V
-
189W (Tc)
PowerFlat™ (8x8) HV
8-PowerVDFN
-
STF36N60M6
MOSFET N-CH 600V 30A TO220FP
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
Quantity
659 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
30A (Tc)
MDmesh™ M6
600 V
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44.3 nC @ 10 V
±25V
1960 pF @ 100 V
40W (Tc)
TO-220FP
TO-220-3 Full Pack
-
STB33N60DM6
MOSFET N-CH 600V 25A D2PAK
1+
¥61.1802
5+
¥57.7813
10+
¥54.3824
Quantity
356 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
25A (Tc)
MDmesh™ M6
600 V
10V
128mOhm @ 12.5A, 10V
4.75V @ 250µA
35 nC @ 10 V
±25V
1500 pF @ 100 V
190W (Tc)
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
STO67N60M6
MOSFET N-CH 600V 34A TOLL
1+
¥54.0000
5+
¥51.0000
10+
¥48.0000
Quantity
100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
34A (Tc)
MDmesh™ M6
600 V
10V
54mOhm @ 26A, 10V
4.75V @ 250µA
72.5 nC @ 10 V
±25V
3400 pF @ 100 V
150W (Tc)
TOLL (HV)
8-PowerSFN
-
STW68N60M6
MOSFET N-CH 600V TO247-3
1+
¥90.0000
5+
¥85.0000
10+
¥80.0000
Quantity
30 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
63A (Tc)
MDmesh™ M6
600 V
0V, 10V
41mOhm @ 31.5A, 10V
4.75V @ 250µA
106 nC @ 10 V
±25V
4360 pF @ 100 V
390W (Tc)
TO-247-3
TO-247-3
-
STL19N60M6
MOSFET N-CH 600V 11A PWRFLAT HV
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
11A (Tc)
MDmesh™ M6
600 V
10V
308mOhm @ 6.5A, 10V
4.75V @ 250µA
16.8 nC @ 10 V
±25V
650 pF @ 100 V
90W (Tc)
PowerFlat™ (8x8) HV
8-PowerVDFN
-
STW33N60M6
MOSFET N-CH 600V TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
-
MOSFET (Metal Oxide)
-
25A (Tj)
MDmesh™ M6
600 V
-
-
-
-
-
-
-
TO-247-3
TO-247-3
-
STD7N65M6
MOSFET N-CH 650V 5A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
5A (Tc)
MDmesh™ M6
650 V
10V
990mOhm @ 2.5A, 10V
3.75V @ 250µA
6.9 nC @ 10 V
±25V
220 pF @ 100 V
60W (Tc)
TO-252 (DPAK)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
STD16N60M6
MOSFET N-CH 600V 12A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
12A (Tc)
MDmesh™ M6
600 V
10V
320mOhm @ 6A, 10V
4.75V @ 250µA
16.7 nC @ 10 V
±25V
575 pF @ 100 V
110W (Tc)
TO-252 (DPAK)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
STWA67N60M6
MOSFET N-CH 600V 52A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
52A (Tc)
MDmesh™ M6
600 V
10V
49mOhm @ 26A, 10V
4.75V @ 250µA
72.5 nC @ 10 V
±25V
3400 pF @ 100 V
330W (Tc)
TO-247 Long Leads
TO-247-3
-
STD5N65M6
MOSFET N-CH 650V DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
4A (Tc)
MDmesh™ M6
650 V
0V, 10V
1.3Ohm @ 2A, 10V
3.75V @ 250µA
5.1 nC @ 10 V
±25V
170 pF @ 100 V
45W (Tc)
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.