HiPerFET™, Ultra X3 Series, Single FETs, MOSFETs

Results:
111
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Power Dissipation (Max)
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Operating Temperature
FET Type
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining111
Applied Filters:
HiPerFET™, Ultra X3
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXFA90N20X3
MOSFET N-CH 200V 90A TO263AA
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
50,105 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
90A (Tc)
10V
12.8mOhm @ 45A, 10V
4.5V @ 1.5mA
78 nC @ 10 V
±20V
5420 pF @ 25 V
390W (Tc)
TO-263AA (IXFA)
-
IXFY36N20X3
MOSFET N-CH 200V 36A TO252AA
1+
$4.4366
5+
$4.1901
10+
$3.9437
Quantity
6,051 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
36A (Tc)
10V
45mOhm @ 18A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1425 pF @ 25 V
176W (Tc)
TO-252AA
-
IXFH60N60X3
MOSFET ULTRA JCT 600V 60A TO247
1+
$9.8873
5+
$9.3380
10+
$8.7887
Quantity
5,570 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
600 V
60A (Tc)
10V
51mOhm @ 30A, 10V
5V @ 4mA
51 nC @ 10 V
±20V
3450 pF @ 25 V
625W (Tc)
TO-247
-
IXFH170N25X3
MOSFET N-CH 250V 170A TO247
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
170A (Tc)
10V
7.4mOhm @ 85A, 10V
4.5V @ 4mA
190 nC @ 10 V
±20V
13500 pF @ 25 V
960W (Tc)
TO-247 (IXTH)
-
IXFT150N30X3HV
MOSFET N-CH 300V 150A TO268HV
1+
$182.5352
5+
$172.3944
10+
$162.2535
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
150A (Tc)
10V
8.3mOhm @ 75A, 10V
4.5V @ 4mA
254 nC @ 10 V
±20V
13100 pF @ 25 V
890W (Tc)
TO-268HV (IXFT)
-
IXFP30N25X3M
MOSFET N-CH 250V 30A TO220
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
30A (Tc)
10V
60mOhm @ 15A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1450 pF @ 25 V
36W (Tc)
TO-220 Isolated Tab
-
IXFY26N30X3
MOSFET N-CH 300V 26A TO252AA
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
1,959 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
26A (Tc)
10V
66mOhm @ 13A, 10V
4.5V @ 500µA
22 nC @ 10 V
±20V
1465 pF @ 25 V
170W (Tc)
TO-252AA
-
IXFP80N25X3
MOSFET N-CH 250V 80A TO220AB
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
1,828 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
80A (Tc)
10V
16mOhm @ 40A, 10V
4.5V @ 1.5mA
83 nC @ 10 V
±20V
5430 pF @ 25 V
390W (Tc)
TO-220-3
-
IXFA80N25X3-TRL
MOSFET N-CH 250V 80A TO263
1+
$6.0845
5+
$5.7465
10+
$5.4085
Quantity
1,174 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
80A (Tc)
10V
16mOhm @ 40A, 10V
4.5V @ 1.5mA
83 nC @ 10 V
±20V
5430 pF @ 25 V
390W (Tc)
TO-263 (D2Pak)
-
IXFQ120N25X3
MOSFET N-CHANNEL 250V 120A TO3P
1+
$31.4366
5+
$29.6901
10+
$27.9437
Quantity
1,066 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
120A (Tc)
10V
12mOhm @ 60A, 10V
4.5V @ 4mA
122 nC @ 10 V
±20V
7870 pF @ 25 V
520W (Tc)
TO-3P
-
IXFP50N20X3
DISCMSFT NCHULTRJNCTX3CLASS TO-2
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
1,050 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
50A (Tc)
10V
30mOhm @ 25A, 10V
4.5V @ 1mA
33 nC @ 10 V
±20V
2100 pF @ 25 V
240W (Tc)
TO-220-3 (IXFP)
-
IXFT220N20X3HV
MOSFET N-CH 200V 220A TO268HV
1+
$30.3046
5+
$28.6210
10+
$26.9374
Quantity
900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
220A (Tc)
10V
6.2mOhm @ 110A, 10V
4.5V @ 4mA
204 nC @ 10 V
±20V
13600 pF @ 25 V
960W (Tc)
TO-268HV (IXFT)
-
IXFP36N20X3
MOSFET N-CH 200V 36A TO220
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
885 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
36A (Tc)
10V
45mOhm @ 18A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1425 pF @ 25 V
176W (Tc)
TO-220-3
-
IXFP60N25X3
MOSFET N-CH 250V 60A TO220AB
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
60A (Tc)
10V
23mOhm @ 30A, 10V
4.5V @ 1.5mA
50 nC @ 10 V
±20V
3610 pF @ 25 V
320W (Tc)
TO-220AB (IXFP)
-
IXFT120N30X3HV
MOSFET N-CH 300V 120A TO268HV
1+
$25.0986
5+
$23.7042
10+
$22.3099
Quantity
524 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
120A (Tc)
10V
11mOhm @ 60A, 10V
4.5V @ 4mA
170 nC @ 10 V
±20V
10500 pF @ 25 V
735W (Tc)
TO-268HV (IXFT)
-
IXFP56N30X3
MOSFET N-CH 300V 56A TO220AB
1+
$16.6437
5+
$15.7190
10+
$14.7944
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
56A (Tc)
10V
27mOhm @ 28A, 10V
4.5V @ 1.5mA
56 nC @ 10 V
±20V
3750 pF @ 25 V
320W (Tc)
TO-220-3
-
IXFA80N25X3
MOSFET N-CH 250V 80A TO263AA
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
230 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
80A (Tc)
10V
16mOhm @ 40A, 10V
4.5V @ 1.5mA
83 nC @ 10 V
±20V
5430 pF @ 25 V
390W (Tc)
TO-263 (D2Pak)
-
IXFP36N20X3M
MOSFET N-CH 200V 36A TO220
1+
$6.4901
5+
$6.1296
10+
$5.7690
Quantity
160 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
200 V
36A (Tc)
10V
45mOhm @ 18A, 10V
4.5V @ 500µA
21 nC @ 10 V
±20V
1425 pF @ 25 V
36W (Tc)
TO-220 Isolated Tab
-
IXFK170N25X3
MOSFET N-CH 250V 170A TO264
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
250 V
170A (Tc)
10V
7.4mOhm @ 85A, 10V
4.5V @ 4mA
190 nC @ 10 V
±20V
13500 pF @ 25 V
960W (Tc)
TO-264AA
-
IXFH150N30X3
MOSFET N-CH 300V 150A TO247
1+
$32.9577
5+
$31.1268
10+
$29.2958
Quantity
123 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X3
300 V
150A (Tc)
10V
8.3mOhm @ 75A, 10V
4.5V @ 4mA
177 nC @ 10 V
±20V
13100 pF @ 25 V
890W (Tc)
TO-247 (IXTH)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.