UniFET-II™ Series, Single FETs, MOSFETs

Results:
32
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining32
Applied Filters:
UniFET-II™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDPF7N60NZT
MOSFET N-CH 600V 6.5A TO220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
6.5A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
1.25Ohm @ 3.25A, 10V
17 nC @ 10 V
±30V
730 pF @ 25 V
33W (Tc)
-
FDPF3N50NZ
MOSFET N-CH 500V 3A TO220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
3A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
2.5Ohm @ 1.5A, 10V
9 nC @ 10 V
±25V
280 pF @ 25 V
27W (Tc)
-
FDP10N60NZ
MOSFET N-CH 600V 10A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
10A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
750mOhm @ 5A, 10V
30 nC @ 10 V
±25V
1475 pF @ 25 V
185W (Tc)
-
FDPF8N50NZU
POWER FIELD-EFFECT TRANSISTOR, 6
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
80,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
6.5A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
1.2Ohm @ 4A, 10V
18 nC @ 10 V
±25V
735 pF @ 25 V
40W (Tc)
-
FDPF8N50NZU
MOSFET N-CH 500V 6.5A TO220F
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
80,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
6.5A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
1.2Ohm @ 4A, 10V
18 nC @ 10 V
±25V
735 pF @ 25 V
40W (Tc)
-
FDD5N60NZTM
MOSFET N-CH 600V 4A DPAK
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
67,109 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
4A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
2Ohm @ 2A, 10V
13 nC @ 10 V
±25V
600 pF @ 25 V
83W (Tc)
-
FDD3N50NZTM
MOSFET N-CH 500V 2.5A DPAK
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
28,508 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
2.5A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
2.5Ohm @ 1.25A, 10V
8 nC @ 10 V
±25V
280 pF @ 25 V
40W (Tc)
-
FDU7N60NZTU
MOSFET N-CH 600V 5.5A IPAK
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
19,059 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
-
MOSFET (Metal Oxide)
-
5.5A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
1.25Ohm @ 2.75A, 10V
17 nC @ 10 V
±25V
730 pF @ 25 V
90W (Tc)
-
FDPF12N60NZ
MOSFET N-CH 600V 12A TO220F
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
8,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
12A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
650mOhm @ 6A, 10V
34 nC @ 10 V
±30V
1676 pF @ 25 V
39W (Tc)
-
FDP12N60NZ
MOSFET N-CH 600V 12A TO220-3
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
1,053 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
12A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
650mOhm @ 6A, 10V
34 nC @ 10 V
±30V
1676 pF @ 25 V
240W (Tc)
-
FDP12N50NZ
MOSFET N-CH 500V 11.5A TO220-3
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
11.5A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
520mOhm @ 5.75A, 10V
30 nC @ 10 V
±25V
1235 pF @ 25 V
170W (Tc)
-
FDP5N60NZ
MOSFET N-CH 600V 4.5A TO220-3
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
570 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
4.5A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
2Ohm @ 2.25A, 10V
13 nC @ 10 V
±25V
600 pF @ 25 V
100W (Tc)
-
FDP7N60NZ
POWER FIELD-EFFECT TRANSISTOR, 6
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
452 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
6.5A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
1.25Ohm @ 3.25A, 10V
17 nC @ 10 V
±30V
730 pF @ 25 V
147W (Tc)
-
FDPF7N60NZT
MOSFET N-CH 600V 6.5A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
6.5A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
1.25Ohm @ 3.25A, 10V
17 nC @ 10 V
±30V
730 pF @ 25 V
33W (Tc)
-
FDPF12N50NZT
MOSFET N-CH 500V 11.5A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
11.5A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
520mOhm @ 5.75A, 10V
30 nC @ 400 V
±25V
1235 pF @ 25 V
42W (Tc)
-
FDPF5N50NZU
MOSFET N-CH 500V 3.9A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
3.9A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
2Ohm @ 1.95A, 10V
12 nC @ 10 V
±25V
485 pF @ 25 V
30W (Tc)
-
FDPF8N50NZF
MOSFET N-CH 500V 7A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
7A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
1Ohm @ 3.5A, 10V
18 nC @ 10 V
±25V
735 pF @ 25 V
40W (Tc)
-
FDPF4N60NZ
MOSFET N-CH 600V 3.8A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
3.8A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
2.5Ohm @ 1.9A, 10V
10.8 nC @ 10 V
±25V
510 pF @ 25 V
28W (Tc)
-
FDD4N60NZ
MOSFET N-CH 600V 3.4A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
3.4A (Tc)
5V @ 250µA
UniFET-II™
600 V
10V
2.5Ohm @ 1.7A, 10V
10.8 nC @ 10 V
±25V
510 pF @ 25 V
114W (Tc)
-
FDD8N50NZTM
MOSFET N-CH 500V 6.5A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
6.5A (Tc)
5V @ 250µA
UniFET-II™
500 V
10V
850mOhm @ 3.25A, 10V
18 nC @ 10 V
±25V
735 pF @ 25 V
90W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.