CoolGaN™ Series, Single FETs, MOSFETs

Results:
25
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Vgs(th) (Max) @ Id
Operating Temperature
Package / Case
Vgs (Max)
FET Type
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining25
Applied Filters:
CoolGaN™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeGradeOperating TemperatureSeriesFET FeatureRds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
IGT40R070D1E8220ATMA1
MOSFET N-CH 400V 31A HSOF-8-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
0°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
400 V
31A (Tc)
-
1.6V @ 2.6mA
±10V
382 pF @ 320 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGOT60R070D1E8220AUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-87
20-PowerSOIC (0.433", 11.00mm Width)
-
IGLD60R070D1AUMA1
GANFET N-CH 600V 15A LSON-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
114W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-
IGT60R190D1SATMA1
GANFET N-CH 600V 12.5A 8HSOF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
12.5A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
55.5W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGLD60R190D1AUMA1
MOSFET N-CH 600V 10A LSON-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
62.5W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-
IGT60R070D1E8220ATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGO60R070D1AUMA1
GANFET N-CH 600V 31A 20DSO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
-
IGOT60R070D1AUMA1
GANFET N-CH 600V 31A 20DSO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-87
20-PowerSOIC (0.433", 11.00mm Width)
-
IGT40R070D1ATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
400 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
382 pF @ 320 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGO60R070D1E8220AUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
-
IGT60R070D1ATMA1
GANFET N-CH 600V 31A 8HSOF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-HSOF-8-3
8-PowerSFN
-
IGLR60R340D1XUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-40°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
8.2A (Tc)
-
1.6V @ 530µA
-10V
87.7 pF @ 400 V
41.6W (Tc)
PG-TSON-8-7
8-PowerTDFN
-
IGLR60R260D1E8238XUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-40°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
10.4A (Tc)
-
1.6V @ 690µA
-10V
110 pF @ 400 V
52W (Tc)
PG-TSON-8-7
8-PowerTDFN
-
IGOT60R070D1E8237AUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-87
20-PowerSOIC (0.433", 11.00mm Width)
-
IGO60R042D1AUMA2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
-
-
-
-
-
-
PG-DSO-20-85
20-PowerSOIC (0.433", 11.00mm Width)
-
IGT60R042D1ATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-
-
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
-
-
-
-
-
-
PG-HSOF-8-3
8-PowerSFN
-
IGLD60R070D1AUMA3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
15A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
114W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-
IGLR60R190D1XUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-40°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
12.8A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
55.5W (Tc)
PG-TSON-8-6
8-PowerTDFN
-
IGOT60R070D1AUMA3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
31A (Tc)
-
1.6V @ 2.6mA
-10V
380 pF @ 400 V
125W (Tc)
PG-DSO-20-87
20-PowerSOIC (0.433", 11.00mm Width)
-
IGLD60R190D1SAUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-
-55°C ~ 150°C (TJ)
CoolGaN™
-
-
-
GaNFET (Gallium Nitride)
600 V
10A (Tc)
-
1.6V @ 960µA
-10V
157 pF @ 400 V
62.5W (Tc)
PG-LSON-8-1
8-LDFN Exposed Pad
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.