U-MOSVI-H Series, Single FETs, MOSFETs

Results:
22
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining22
Applied Filters:
U-MOSVI-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsSeriesDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TK40P04M1(T6RSS-Q)
1+
$0.4817
5+
$0.4549
10+
$0.4282
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
40A (Ta)
11mOhm @ 20A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 200µA
29 nC @ 10 V
±20V
1920 pF @ 10 V
47W (Tc)
-
TPC8048-H(TE12L,Q)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
16A (Ta)
6.9mOhm @ 8A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 1mA
87 nC @ 10 V
±20V
7540 pF @ 10 V
1W (Ta)
-
TPCC8006-H(TE12LQM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-VDFN Exposed Pad
8-TSON Advance (3.3x3.3)
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
22A (Ta)
8mOhm @ 11A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 200µA
27 nC @ 10 V
±20V
2200 pF @ 10 V
700mW (Ta), 27W (Tc)
-
TPCC8005-H(TE12LQM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-VDFN Exposed Pad
8-TSON Advance (3.3x3.3)
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
26A (Ta)
6.4mOhm @ 13A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 500µA
35 nC @ 10 V
±20V
2900 pF @ 10 V
700mW (Ta), 30W (Tc)
-
TPCC8003-H(TE12LQM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-VDFN Exposed Pad
8-TSON Advance (3.3x3.3)
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
13A (Ta)
16.9mOhm @ 6.5A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 200µA
17 nC @ 10 V
±20V
1300 pF @ 10 V
700mW (Ta), 22W (Tc)
-
TK50P04M1(T6RSS-Q)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
50A (Ta)
8.7mOhm @ 25A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 500µA
38 nC @ 10 V
±20V
2600 pF @ 10 V
60W (Tc)
-
TK50P03M1(T6RSS-Q)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
50A (Ta)
7.5mOhm @ 25A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 200µA
25.3 nC @ 10 V
±20V
1700 pF @ 10 V
47W (Tc)
-
TPC8035-H(TE12L,QM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
18A (Ta)
3.2mOhm @ 9A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 1mA
82 nC @ 10 V
±20V
7800 pF @ 10 V
1W (Ta)
-
TPCA8051-H(T2L1,VM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
8-SOP Advance (5x5)
150°C (TJ)
80 V
-
MOSFET (Metal Oxide)
-
28A (Ta)
9.4mOhm @ 14A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 1mA
91 nC @ 10 V
±20V
7540 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
TPCA8045-H(T2L1,VM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
8-SOP Advance (5x5)
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
46A (Ta)
3.6mOhm @ 23A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 1mA
90 nC @ 10 V
±20V
7540 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
TK20P04M1,RQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
20A (Ta)
29mOhm @ 10A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 100µA
15 nC @ 10 V
±20V
985 pF @ 10 V
27W (Tc)
-
TPCA8036-H(TE12L,Q
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
8-SOP Advance (5x5)
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
38A (Ta)
4.2mOhm @ 19A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 500µA
50 nC @ 10 V
±20V
4600 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
TPC8036-H(TE12L,QM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.173", 4.40mm Width)
8-SOP (5.5x6.0)
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
18A (Ta)
4.5mOhm @ 9A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 1mA
49 nC @ 10 V
±20V
4600 pF @ 10 V
1W (Ta)
-
TPC6010-H(TE85L,FM
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SOT-23-6 Thin, TSOT-23-6
VS-6 (2.9x2.8)
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
6.1A (Ta)
59mOhm @ 3.1A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 100µA
12 nC @ 10 V
±20V
830 pF @ 10 V
700mW (Ta)
-
TPC6009-H(TE85L,FM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SOT-23-6 Thin, TSOT-23-6
VS-6 (2.9x2.8)
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
5.3A (Ta)
81mOhm @ 2.7A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 100µA
4.7 nC @ 10 V
±20V
290 pF @ 10 V
700mW (Ta)
-
TPC6008-H(TE85L,FM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SOT-23-6 Thin, TSOT-23-6
VS-6 (2.9x2.8)
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
5.9A (Ta)
60mOhm @ 3A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 100µA
4.8 nC @ 10 V
±20V
300 pF @ 10 V
700mW (Ta)
-
TK60P03M1,RQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
60A (Ta)
6.4mOhm @ 30A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 500µA
40 nC @ 10 V
±20V
2700 pF @ 10 V
63W (Tc)
-
TPCA8047-H(T2L1,VM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
8-SOP Advance (5x5)
150°C
40 V
-
MOSFET (Metal Oxide)
-
32A (Ta)
7.3mOhm @ 16A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 500µA
43 nC @ 10 V
±20V
3365 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
TK45P03M1,RQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-
30 V
-
MOSFET (Metal Oxide)
-
45A (Ta)
9.7mOhm @ 22.5A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 200µA
25 nC @ 10 V
±20V
1500 pF @ 10 V
-
-
TK40P03M1(T6RDS-Q)
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-
30 V
-
MOSFET (Metal Oxide)
-
40A (Ta)
10.8mOhm @ 20A, 10V
U-MOSVI-H
4.5V, 10V
2.3V @ 100µA
17.5 nC @ 10 V
±20V
1150 pF @ 10 V
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.