QFET® Series, Single FETs, MOSFETs

Results:
1,062
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining1,062
Applied Filters:
QFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FDMC2523P
MOSFET P-CH 150V 3A 8MLP
1+
$0.2282
5+
$0.2155
10+
$0.2028
Quantity
135,655 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
-
8-PowerWDFN
8-MLP (3.3x3.3)
MOSFET (Metal Oxide)
QFET®
-
3A (Tc)
5V @ 250µA
150 V
10V
1.5Ohm @ 1.5A, 10V
9 nC @ 10 V
±30V
270 pF @ 25 V
42W (Tc)
-
FQD9N25TM
MOSFET N-CH 250V 7.4A DPAK
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
126,793 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
QFET®
-
7.4A (Tc)
5V @ 250µA
250 V
10V
420mOhm @ 3.7A, 10V
20 nC @ 10 V
±30V
700 pF @ 25 V
2.5W (Ta), 55W (Tc)
-
FQA11N90C
MOSFET N-CH 900V 11A TO3P
1+
$1.9014
5+
$1.7958
10+
$1.6901
Quantity
74,560 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-3P-3, SC-65-3
TO-3P
MOSFET (Metal Oxide)
QFET®
-
11A (Tc)
5V @ 250µA
900 V
10V
1.1Ohm @ 5.5A, 10V
80 nC @ 10 V
±30V
3290 pF @ 25 V
300W (Tc)
-
FQT4N20LTF
MOSFET N-CH 200V 850MA SOT223-4
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
72,841 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-261-4, TO-261AA
SOT-223-4
MOSFET (Metal Oxide)
QFET®
-
850mA (Tc)
2V @ 250µA
200 V
5V, 10V
1.35Ohm @ 425mA, 10V
5.2 nC @ 5 V
±20V
310 pF @ 25 V
2.2W (Tc)
-
FQT7N10LTF
MOSFET N-CH 100V 1.7A SOT223-4
1+
$0.4513
5+
$0.4262
10+
$0.4011
Quantity
65,883 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-261-4, TO-261AA
SOT-223-4
MOSFET (Metal Oxide)
QFET®
-
1.7A (Tc)
2V @ 250µA
100 V
5V, 10V
350mOhm @ 850mA, 10V
6 nC @ 5 V
±20V
290 pF @ 25 V
2W (Tc)
-
FQPF8N60C
MOSFET N-CH 600V 7.5A TO220F
1+
$0.4056
5+
$0.3831
10+
$0.3606
Quantity
51,231 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3 Full Pack
TO-220F-3
MOSFET (Metal Oxide)
QFET®
-
7.5A (Tc)
4V @ 250µA
600 V
10V
1.2Ohm @ 3.75A, 10V
36 nC @ 10 V
±30V
1255 pF @ 25 V
48W (Tc)
-
FQD13N06LTM
MOSFET N-CH 60V 11A DPAK
1+
$0.4944
5+
$0.4669
10+
$0.4394
Quantity
50,068 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
QFET®
-
11A (Tc)
2.5V @ 250µA
60 V
5V, 10V
115mOhm @ 5.5A, 10V
6.4 nC @ 5 V
±20V
350 pF @ 25 V
2.5W (Ta), 28W (Tc)
-
FQD13N10LTM
MOSFET N-CH 100V 10A DPAK
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
50,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
QFET®
-
10A (Tc)
2V @ 250µA
100 V
5V, 10V
180mOhm @ 5A, 10V
12 nC @ 5 V
±20V
520 pF @ 25 V
2.5W (Ta), 40W (Tc)
-
FQD19N10LTM
MOSFET N-CH 100V 15.6A DPAK
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
49,789 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
QFET®
-
15.6A (Tc)
2V @ 250µA
100 V
5V, 10V
100mOhm @ 7.8A, 10V
18 nC @ 5 V
±20V
870 pF @ 25 V
2.5W (Ta), 50W (Tc)
-
FQB50N06TM
MOSFET N-CH 60V 50A D2PAK
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
45,223 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
MOSFET (Metal Oxide)
QFET®
-
50A (Tc)
4V @ 250µA
60 V
10V
22mOhm @ 25A, 10V
41 nC @ 10 V
±25V
1540 pF @ 25 V
3.75W (Ta), 120W (Tc)
-
FQD3P50TM
MOSFET P-CH 500V 2.1A DPAK
1+
$1.6479
5+
$1.5563
10+
$1.4648
Quantity
39,204 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
QFET®
-
2.1A (Tc)
5V @ 250µA
500 V
10V
4.9Ohm @ 1.05A, 10V
23 nC @ 10 V
±30V
660 pF @ 25 V
2.5W (Ta), 50W (Tc)
-
FQP13N50C
MOSFET N-CH 500V 13A TO220-3
1+
$1.6732
5+
$1.5803
10+
$1.4873
Quantity
37,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3
TO-220-3
MOSFET (Metal Oxide)
QFET®
-
13A (Tc)
4V @ 250µA
500 V
10V
480mOhm @ 6.5A, 10V
56 nC @ 10 V
±30V
2055 pF @ 25 V
195W (Tc)
-
FQD5P10TM
MOSFET P-CH 100V 3.6A DPAK
1+
$0.4563
5+
$0.4310
10+
$0.4056
Quantity
36,479 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
QFET®
-
3.6A (Tc)
4V @ 250µA
100 V
10V
1.05Ohm @ 1.8A, 10V
8.2 nC @ 10 V
±30V
250 pF @ 25 V
2.5W (Ta), 25W (Tc)
-
FQP50N06
MOSFET N-CH 60V 50A TO220-3
1+
$0.8366
5+
$0.7901
10+
$0.7437
Quantity
35,747 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
-
TO-220-3
TO-220-3
MOSFET (Metal Oxide)
QFET®
-
50A (Tc)
4V @ 250µA
60 V
10V
22mOhm @ 25A, 10V
41 nC @ 10 V
±25V
1540 pF @ 25 V
120W (Tc)
-
FQPF5N50CYDTU
MOSFET N-CH 500V 5A TO220F-3
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
35,650 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3 Full Pack, Formed Leads
TO-220F-3 (Y-Forming)
MOSFET (Metal Oxide)
QFET®
-
5A (Tc)
4V @ 250µA
500 V
10V
1.4Ohm @ 2.5A, 10V
24 nC @ 10 V
±30V
625 pF @ 25 V
38W (Tc)
-
FQPF5N50CYDTU
POWER FIELD-EFFECT TRANSISTOR, 5
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
35,650 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
-
TO-220-3 Full Pack, Formed Leads
TO-220F-3 (Y-Forming)
MOSFET (Metal Oxide)
QFET®
-
5A (Tc)
4V @ 250µA
500 V
10V
1.4Ohm @ 2.5A, 10V
24 nC @ 10 V
±30V
625 pF @ 25 V
38W (Tc)
-
FQD5N60CTM
MOSFET N-CH 600V 2.8A DPAK
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
32,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
MOSFET (Metal Oxide)
QFET®
-
2.8A (Tc)
4V @ 250µA
600 V
10V
2.5Ohm @ 1.4A, 10V
19 nC @ 10 V
±30V
670 pF @ 25 V
2.5W (Ta), 49W (Tc)
-
FQPF5N60C_F105
MOSFET N-CH 600V 4.5A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
MOSFET (Metal Oxide)
QFET®
-
4.5A (Tc)
4V @ 250µA
600 V
10V
2.5Ohm @ 2.25A, 10V
19 nC @ 10 V
±30V
670 pF @ 25 V
33W (Tc)
FQPF13N50C_F105
MOSFET N-CH 500V 13A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
MOSFET (Metal Oxide)
QFET®
-
13A (Tc)
4V @ 250µA
500 V
10V
480mOhm @ 6.5A, 10V
56 nC @ 10 V
±30V
2055 pF @ 25 V
48W (Tc)
FQPF7N65CYDTU-T
FQPF7N65CYDTU-T
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Formed Leads
TO-220F-3 (Y-Forming)
MOSFET (Metal Oxide)
QFET®
-
7A (Tj)
4V @ 250µA
650 V
10V
1.4Ohm @ 3.5A, 10V
36 nC @ 10 V
±30V
1245 pF @ 25 V
52W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.