Trench Series, Single FETs, MOSFETs

Results:
163
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Mounting Type
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining163
Applied Filters:
Trench
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXTA180N10T7
MOSFET N-CH 100V 180A TO263-7
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
50,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
180A (Tc)
4.5V @ 250µA
100 V
10V
6.4mOhm @ 25A, 10V
151 nC @ 10 V
±30V
6900 pF @ 25 V
480W (Tc)
TO-263-7 (IXTA)
-
IXTP50N25T
MOSFET N-CH 250V 50A TO220AB
1+
$2.7887
5+
$2.6338
10+
$2.4789
Quantity
8,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
50A (Tc)
5V @ 1mA
250 V
10V
50mOhm @ 25A, 10V
78 nC @ 10 V
±30V
4000 pF @ 25 V
400W (Tc)
TO-220-3
-
IXTQ76N25T
MOSFET N-CH 250V 76A TO3P
1+
$17.7465
5+
$16.7606
10+
$15.7746
Quantity
6,180 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
76A (Tc)
5V @ 1mA
250 V
10V
39mOhm @ 500mA, 10V
92 nC @ 10 V
±30V
4500 pF @ 25 V
460W (Tc)
TO-3P
-
IXTP160N10T
MOSFET N-CH 100V 160A TO220AB
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
5,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
160A (Tc)
4.5V @ 250µA
100 V
10V
7mOhm @ 25A, 10V
132 nC @ 10 V
±30V
6600 pF @ 25 V
430W (Tc)
TO-220-3
-
IXTP130N10T
MOSFET N-CH 100V 130A TO220AB
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
3,903 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
130A (Tc)
4.5V @ 250µA
100 V
10V
9.1mOhm @ 25A, 10V
104 nC @ 10 V
±30V
5080 pF @ 25 V
360W (Tc)
TO-220-3
-
IXTH160N10T
MOSFET N-CH 100V 160A TO247
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
46 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
160A (Tc)
4.5V @ 250µA
100 V
10V
7mOhm @ 25A, 10V
132 nC @ 10 V
±30V
6600 pF @ 25 V
430W (Tc)
TO-247 (IXTH)
-
IXTH50N25T
MOSFET N-CH 250V 50A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
50A (Tc)
5V @ 1mA
250 V
10V
60mOhm @ 25A, 10V
78 nC @ 10 V
±30V
4000 pF @ 25 V
400W (Tc)
TO-247 (IXTH)
-
IXTP44N10T
MOSFET N-CH 100V 44A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
44A (Tc)
4.5V @ 25µA
100 V
10V
30mOhm @ 22A, 10V
33 nC @ 10 V
±30V
1262 pF @ 25 V
130W (Tc)
TO-220-3
-
IXTA180N10T
MOSFET N-CH 100V 180A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
180A (Tc)
4.5V @ 250µA
100 V
10V
6.4mOhm @ 25A, 10V
151 nC @ 10 V
±30V
6900 pF @ 25 V
480W (Tc)
TO-263AA
-
IXTP180N10T
MOSFET N-CH 100V 180A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
180A (Tc)
4.5V @ 250µA
100 V
10V
6.4mOhm @ 25A, 10V
151 nC @ 10 V
±30V
6900 pF @ 25 V
480W (Tc)
TO-220-3
-
IXTH110N25T
MOSFET N-CH 250V 110A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
110A (Tc)
4.5V @ 1mA
250 V
10V
24mOhm @ 55A, 10V
157 nC @ 10 V
±20V
9400 pF @ 25 V
694W (Tc)
TO-247 (IXTH)
-
IXTQ102N20T
MOSFET N-CH 200V 102A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
102A (Tc)
4.5V @ 1mA
200 V
-
23mOhm @ 500mA, 10V
114 nC @ 10 V
-
6800 pF @ 25 V
750W (Tc)
TO-3P
-
IXTA32N20T
MOSFET N-CH 200V 32A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
Trench
-
32A (Tc)
4.5V @ 250µA
200 V
10V
72mOhm @ 16A, 10V
38 nC @ 10 V
±20V
1760 pF @ 25 V
200W (Tc)
TO-263AA
-
IXTQ102N25T
MOSFET N-CH 250V 102A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
-
-
MOSFET (Metal Oxide)
Trench
-
102A (Tc)
-
250 V
-
-
-
-
-
-
TO-3P
-
IXTQ120N15T
MOSFET N-CH 150V 120A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
-
-
MOSFET (Metal Oxide)
Trench
-
120A (Tc)
-
150 V
-
16mOhm @ 500mA, 10V
150 nC @ 10 V
-
4900 pF @ 25 V
-
TO-3P
-
IXTQ54N30T
MOSFET N-CH 300V 54A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
-
-
MOSFET (Metal Oxide)
Trench
-
54A (Tc)
-
300 V
-
-
-
-
-
-
TO-3P
-
IXTV102N25T
MOSFET N-CH 250V 102A PLUS220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3, Short Tab
-
-
MOSFET (Metal Oxide)
Trench
-
102A (Tc)
-
250 V
-
-
-
-
-
-
PLUS220
-
IXTV60N30T
MOSFET N-CH 300V 60A PLUS220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3, Short Tab
-
-
MOSFET (Metal Oxide)
Trench
-
60A (Tc)
-
300 V
-
-
-
-
-
-
PLUS220
-
IXTY15N20T
MOSFET N-CH 200V 15A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
MOSFET (Metal Oxide)
Trench
-
15A (Tc)
-
200 V
-
-
-
-
-
-
TO-252AA
-
IXTY24N15T
MOSFET N-CH 150V 24A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-
MOSFET (Metal Oxide)
Trench
-
24A (Tc)
-
150 V
-
-
-
-
-
-
TO-252AA
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.