OptiMOS® Series, Single FETs, MOSFETs

Results:
14
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
FET Type
Mounting Type
FET Feature
Grade
Qualification
Technology
Results remaining14
Applied Filters:
OptiMOS®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeTechnologySupplier Device PackageSeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPI50R140CPXKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-
MOSFET (Metal Oxide)
PG-TO262-3-1
OptiMOS®
-
23A (Tc)
500 V
10V
140mOhm @ 14A, 10V
3.5V @ 930µA
64 nC @ 10 V
±20V
2540 pF @ 100 V
192W (Tc)
-
BSP603S2LNT
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
MOSFET (Metal Oxide)
PG-SOT223-4-21
OptiMOS®
-
5.2A (Ta)
55 V
4.5V, 10V
33mOhm @ 2.6A, 10V
2V @ 50µA
42 nC @ 10 V
±20V
1390 pF @ 25 V
1.8W (Ta)
-
BSF050N03LQ3G
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
DirectFET™ Isometric MX
-
MOSFET (Metal Oxide)
MG-WDSON-2
OptiMOS®
-
15A (Ta), 60A (Tc)
30 V
4.5V, 10V
5mOhm @ 20A, 10V
2.2V @ 250µA
42 nC @ 10 V
±20V
3000 pF @ 15 V
2.2W (Ta), 28W (Tc)
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SPB80N06SL2-7
N-CHANNEL AUTOMOTIVE MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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MOSFET (Metal Oxide)
PG-TO263-3-2
OptiMOS®
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80A (Tc)
55 V
4.5V, 10V
7mOhm @ 60A, 10V
2V @ 150µA
130 nC @ 10 V
±20V
3160 pF @ 25 V
210W (Tc)
-
SPB160N04S2-03
160A, 40V N-CHANNEL, MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-
MOSFET (Metal Oxide)
PG-TO263-7-3
OptiMOS®
-
160A (Tc)
40 V
10V
2.9mOhm @ 80A, 10V
4V @ 250µA
170 nC @ 10 V
±20V
7320 pF @ 25 V
300W (Tc)
-
IPS050N03LG
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3
OptiMOS®
-
50A (Tc)
30 V
4.5V, 10V
5mOhm @ 30A, 10V
2.2V @ 250µA
31 nC @ 10 V
±20V
3200 pF @ 15 V
68W (Tc)
-
BSC200P03LSG
P-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-PowerTDFN
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MOSFET (Metal Oxide)
PG-TDSON-8-6
OptiMOS®
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9.9A (Ta), 12.5A (Tc)
30 V
10V
20mOhm @ 12.5A, 10V
1V @ 100µA
48.5 nC @ 10 V
±25V
2430 pF @ 15 V
2.5W (Ta), 63W (Tc)
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BSO203SPNT
P-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
PG-DSO-8
OptiMOS®
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9A (Ta)
20 V
2.5V, 4.5V
21mOhm @ 9A, 4.5V
1.2V @ 50µA
50.4 nC @ 4.5 V
±12V
2265 pF @ 15 V
2.35W (Ta)
-
SPD50N03S2-07G
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
PG-TO252-3-11
OptiMOS®
-
50A (Tc)
30 V
10V
7.3mOhm @ 50A, 10V
4V @ 85µA
46.5 nC @ 10 V
±20V
2170 pF @ 25 V
136W (Tc)
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BSO203SP
P-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
8-SOIC (0.154", 3.90mm Width)
-
MOSFET (Metal Oxide)
PG-DSO-8
OptiMOS®
-
7A (Ta)
20 V
2.5V, 4.5V
21mOhm @ 8.9A, 4.5V
1.2V @ 50µA
39 nC @ 4.5 V
±12V
3750 pF @ 15 V
1.6W (Ta)
-
BSS84WT106
PCH -60V -0.21A, SOT-323, SMALL
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
P-Channel
SC-70, SOT-323
-
MOSFET (Metal Oxide)
UMT3
OptiMOS®
-
210mA (Ta)
60 V
4.5V, 10V
5.3Ohm @ 210mA, 10V
2.5V @ 200µA
-
±20V
34 pF @ 30 V
200mW (Ta)
-
BSS138WT106
NCH 60V 310MA, SOT-323, SMALL SI
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
SC-70, SOT-323
-
MOSFET (Metal Oxide)
UMT3
OptiMOS®
-
310mA (Ta)
60 V
2.5V, 10V
2.4Ohm @ 310mA, 10V
2.3V @ 1mA
-
±20V
15 pF @ 30 V
200mW (Ta)
-
BSS670T116
NCH 60V 650MA, SOT-23, SMALL SIG
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
MOSFET (Metal Oxide)
SST3
OptiMOS®
-
650mA (Ta)
60 V
2.5V, 10V
680mOhm @ 650mA, 10V
2V @ 10µA
-
±20V
47 pF @ 30 V
200mW (Ta)
-
IPP230N06L3GXKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C
N-Channel
TO-220-3
-
MOSFET (Metal Oxide)
PG-TO220-3
OptiMOS®
-
30A
60 V
4.5V, 10V
23mOhm @ 30A, 10V
2.2V @ 11µA
7 nC @ 4.5 V
±20V
1200 pF @ 30 V
36W
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.