MegaMOS™ Series, Single FETs, MOSFETs

Results:
30
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining30
Applied Filters:
MegaMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTH50N20
MOSFET N-CH 200V 50A TO247
1+
$8.3662
5+
$7.9014
10+
$7.4366
Quantity
340 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
50A (Tc)
4V @ 250µA
MegaMOS™
200 V
10V
45mOhm @ 25A, 10V
220 nC @ 10 V
±20V
4600 pF @ 25 V
300W (Tc)
-
IXTH20N60
MOSFET N-CH 600V 20A TO247
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
240 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
20A (Tc)
4.5V @ 250µA
MegaMOS™
600 V
10V
350mOhm @ 10A, 10V
170 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
-
IXTH40N30
MOSFET N-CH 300V 40A TO247
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
40A (Tc)
4V @ 250µA
MegaMOS™
300 V
10V
85mOhm @ 500mA, 10V
220 nC @ 10 V
±20V
4600 pF @ 25 V
300W (Tc)
-
IXTH12N90
MOSFET N-CH 900V 12A TO247
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4.5V @ 250µA
MegaMOS™
900 V
10V
900mOhm @ 6A, 10V
170 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
-
IXTK80N25
MOSFET N-CH 250V 80A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
80A (Tc)
4V @ 250µA
MegaMOS™
250 V
10V
33mOhm @ 500mA, 10V
240 nC @ 10 V
±20V
6000 pF @ 25 V
540W (Tc)
-
IXTK90N15
MOSFET N-CH 150V 90A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
90A (Tc)
4V @ 250µA
MegaMOS™
150 V
10V
16mOhm @ 45A, 10V
240 nC @ 10 V
±20V
6400 pF @ 25 V
390W (Tc)
-
IXTK180N15
MOSFET N-CH 150V 180A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
180A (Tc)
4V @ 250µA
MegaMOS™
150 V
10V
9mOhm @ 500mA, 10V
240 nC @ 10 V
±20V
7000 pF @ 25 V
730W (Tc)
-
IXTK160N20
MOSFET N-CH 200V 160A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
160A (Tc)
4V @ 250µA
MegaMOS™
200 V
10V
13mOhm @ 500mA, 10V
415 nC @ 10 V
±20V
12900 pF @ 25 V
730W (Tc)
-
IXTK128N15
MOSFET N-CH 150V 128A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
128A (Tc)
4V @ 250µA
MegaMOS™
150 V
10V
15mOhm @ 500mA, 10V
240 nC @ 10 V
±20V
6000 pF @ 25 V
540W (Tc)
-
IXTK120N25
MOSFET N-CH 250V 120A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
120A (Tc)
4V @ 250µA
MegaMOS™
250 V
10V
20mOhm @ 500mA, 10V
360 nC @ 10 V
±20V
7700 pF @ 25 V
730W (Tc)
-
IXTK110N30
MOSFET N-CH 300V 110A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
110A (Tc)
4V @ 250µA
MegaMOS™
300 V
10V
26mOhm @ 500mA, 10V
390 nC @ 10 V
±20V
7800 pF @ 25 V
730W (Tc)
-
IXTH30N50
MOSFET N-CH 500V 30A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
30A (Tc)
4V @ 250µA
MegaMOS™
500 V
10V
170mOhm @ 500mA, 10V
227 nC @ 10 V
±20V
5680 pF @ 25 V
360W (Tc)
-
IXTH14N100
MOSFET N-CH 1000V 14A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
14A (Tc)
4.5V @ 250µA
MegaMOS™
1000 V
10V
820mOhm @ 500mA, 10V
195 nC @ 10 V
±20V
5650 pF @ 25 V
360W (Tc)
-
IXTH14N80
MOSFET N-CH 800V 14A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
14A (Tc)
4.5V @ 250µA
MegaMOS™
800 V
10V
700mOhm @ 500mA, 10V
170 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
-
IXTH13N80
MOSFET N-CH 800V 13A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
13A (Tc)
4.5V @ 250µA
MegaMOS™
800 V
10V
800mOhm @ 500mA, 10V
170 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
-
IXTH12N100
MOSFET N-CH 1000V 12A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4.5V @ 250µA
MegaMOS™
1000 V
10V
1.05Ohm @ 6A, 10V
170 nC @ 10 V
±20V
4000 pF @ 25 V
300W (Tc)
-
IXTC75N10
MOSFET N-CH 100V 72A ISOPLUS220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
ISOPLUS220™
ISOPLUS220™
-
MOSFET (Metal Oxide)
-
72A (Tc)
4V @ 250µA
MegaMOS™
100 V
10V
20mOhm @ 37.5A, 10V
260 nC @ 10 V
±20V
4500 pF @ 25 V
230W (Tc)
-
IRFP470
MOSFET N-CH 500V 24A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
24A (Tc)
4V @ 250µA
MegaMOS™
500 V
10V
230mOhm @ 12A, 10V
190 nC @ 10 V
±20V
4200 pF @ 25 V
300W (Tc)
-
IXTN21N100
MOSFET N-CH 1000V 21A SOT227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
SOT-227B
-
MOSFET (Metal Oxide)
-
21A (Tc)
4.5V @ 500µA
MegaMOS™
1000 V
10V
550mOhm @ 500mA, 10V
250 nC @ 10 V
±20V
8400 pF @ 25 V
520W (Tc)
-
IXTH13N110
MOSFET N-CH 1100V 13A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
13A (Tc)
4.5V @ 250µA
MegaMOS™
1100 V
10V
920mOhm @ 500mA, 10V
195 nC @ 10 V
±20V
5650 pF @ 25 V
360W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.