CoolMOS™ C7 Series, Single FETs, MOSFETs

Results:
71
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining71
Applied Filters:
CoolMOS™ C7
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IPZ65R045C7XKSA1
MOSFET N-CH 650V 46A TO247
1+
$139.4366
5+
$131.6901
10+
$123.9437
Quantity
55,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
227W (Tc)
PG-TO247
-
IPP65R190C7FKSA1
MOSFET N-CH 650V 13A TO220-3
1+
$3.6761
5+
$3.4718
10+
$3.2676
Quantity
6,512 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
13A (Tc)
10V
190mOhm @ 5.7A, 10V
4V @ 290µA
23 nC @ 10 V
±20V
1150 pF @ 400 V
72W (Tc)
PG-TO220-3
-
IPL65R070C7AUMA1
MOSFET N-CH 650V 28A 4VSON
1+
$81.1268
5+
$76.6197
10+
$72.1127
Quantity
5,945 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
28A (Tc)
10V
70mOhm @ 8.5A, 10V
4V @ 850µA
64 nC @ 10 V
±20V
3020 pF @ 100 V
169W (Tc)
PG-VSON-4
-
IPB60R040C7ATMA1
MOSFET N-CH 600V 50A TO263-3
1+
$10.9014
5+
$10.2958
10+
$9.6901
Quantity
5,905 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
227W (Tc)
PG-TO263-3
-
IPL60R125C7AUMA1
MOSFET N-CH 600V 17A 4VSON
1+
$7.4028
5+
$6.9915
10+
$6.5803
Quantity
3,394 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
17A (Tc)
10V
125mOhm @ 7.8A, 10V
4V @ 390µA
34 nC @ 10 V
±20V
1500 pF @ 400 V
103W (Tc)
PG-VSON-4
-
IPL65R230C7AUMA1
MOSFET N-CH 650V 10A 4VSON
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
10A (Tc)
10V
230mOhm @ 2.4A, 10V
4V @ 240µA
20 nC @ 10 V
±20V
996 pF @ 400 V
67W (Tc)
PG-VSON-4
-
IPL65R099C7AUMA1
MOSFET N-CH 650V 21A 4VSON
1+
$10.6479
5+
$10.0563
10+
$9.4648
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
21A (Tc)
10V
99mOhm @ 5.9A, 10V
4V @ 590µA
45 nC @ 10 V
±20V
2140 pF @ 400 V
128W (Tc)
PG-VSON-4
-
IPL60R185C7AUMA1
MOSFET N-CH 600V 13A 4VSON
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
13A (Tc)
10V
185mOhm @ 5.3A, 10V
4V @ 260µA
24 nC @ 10 V
±20V
1080 pF @ 400 V
77W (Tc)
PG-VSON-4
-
IPB60R060C7ATMA1
MOSFET N-CH 600V 35A TO263-3
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
35A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
162W (Tc)
D2PAK (TO-263)
-
IPW65R190C7XKSA1
MOSFET N-CH 650V 13A TO247-3
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
13A (Tc)
10V
190mOhm @ 5.7A, 10V
4V @ 290µA
23 nC @ 10 V
±20V
1150 pF @ 400 V
72W (Tc)
PG-TO247-3
-
IPL65R130C7AUMA1
MOSFET N-CH 650V 15A 4VSON
1+
$88.7324
5+
$83.8028
10+
$78.8732
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
15A (Tc)
10V
130mOhm @ 4.4A, 10V
4V @ 440µA
35 nC @ 10 V
±20V
1670 pF @ 400 V
102W (Tc)
PG-VSON-4
-
IPZ60R040C7XKSA1
MOSFET N-CH 600V 50A TO247-4
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
1,470 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
227W (Tc)
PG-TO247-4
-
IPW65R045C7FKSA1
MOSFET N-CH 650V 46A TO247-3
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
1,210 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
46A (Tc)
10V
45mOhm @ 24.9A, 10V
4V @ 1.25mA
93 nC @ 10 V
±20V
4340 pF @ 400 V
227W (Tc)
PG-TO247-3-1
-
IPB65R190C7ATMA2
MOSFET N-CH 650V 13A TO263-3
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
918 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
13A (Tc)
10V
190mOhm @ 5.7A, 10V
4V @ 290µA
23 nC @ 10 V
±20V
1150 pF @ 400 V
72W (Tc)
PG-TO263-3
-
IPW65R019C7FKSA1
MOSFET N-CH 650V 75A TO247-3
1+
$32.8234
5+
$30.9999
10+
$29.1763
Quantity
393 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
75A (Tc)
10V
19mOhm @ 58.3A, 10V
4V @ 2.92mA
215 nC @ 10 V
±20V
9900 pF @ 400 V
446W (Tc)
PG-TO247-3
-
IPP60R040C7XKSA1
MOSFET N-CH 600V 50A TO220-3
1+
$22.3099
5+
$21.0704
10+
$19.8310
Quantity
291 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
50A (Tc)
10V
40mOhm @ 24.9A, 10V
4V @ 1.24mA
107 nC @ 10 V
±20V
4340 pF @ 400 V
227W (Tc)
PG-TO220-3-1
-
IPW60R180C7XKSA1
MOSFET N-CH 600V 13A TO247-3
1+
$88.7324
5+
$83.8028
10+
$78.8732
Quantity
226 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
13A (Tc)
10V
180mOhm @ 5.3A, 10V
4V @ 260µA
24 nC @ 10 V
±20V
1080 pF @ 400 V
68W (Tc)
PG-TO247-3
-
IPW65R125C7XKSA1
MOSFET N-CH 650V 18A TO247-3
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
172 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
18A (Tc)
10V
125mOhm @ 8.9A, 10V
4V @ 440µA
35 nC @ 10 V
±20V
1670 pF @ 400 V
101W (Tc)
PG-TO247-3
-
IPT65R033G7XTMA1
MOSFET N-CH 650V 69A 8HSOF
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
39 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerSFN
650 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
69A (Tc)
10V
33mOhm @ 28.9A, 10V
4V @ 1.44mA
110 nC @ 10 V
±20V
5000 pF @ 400 V
391W (Tc)
PG-HSOF-8-2
-
IPL60R065C7AUMA1
1+
$329.5775
5+
$311.2676
10+
$292.9577
Quantity
10 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
600 V
-
MOSFET (Metal Oxide)
-
CoolMOS™ C7
29A (Tc)
10V
65mOhm @ 15.9A, 10V
4V @ 800µA
68 nC @ 10 V
±20V
2850 pF @ 400 V
180W (Tc)
PG-VSON-4-1
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.