U-MOSV-H Series, Single FETs, MOSFETs

Results:
10
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
FET Feature
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Technology
Results remaining10
Applied Filters:
U-MOSV-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologySupplier Device PackageCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Qualification
TPC8A05-H(TE12L,QM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.173", 4.40mm Width)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-SOP (5.5x6.0)
10A (Ta)
2.3V @ 1mA
U-MOSV-H
4.5V, 10V
13.3mOhm @ 5A, 10V
15 nC @ 10 V
±20V
1700 pF @ 10 V
Schottky Diode (Body)
1W (Ta)
-
TPCC8002-H(TE12L,Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-TSON Advance (3.3x3.3)
22A (Ta)
2.5V @ 1mA
U-MOSV-H
4.5V, 10V
8.3mOhm @ 11A, 10V
27 nC @ 10 V
±20V
2500 pF @ 10 V
-
700mW (Ta), 30W (Tc)
-
TPC8038-H(TE12L,Q)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.173", 4.40mm Width)
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-SOP (5.5x6.0)
12A (Ta)
2.5V @ 1mA
U-MOSV-H
-
11.4mOhm @ 6A, 10V
21 nC @ 10 V
-
2150 pF @ 10 V
-
-
-
TPCA8031-H(TE12L,Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-SOP Advance (5x5)
24A (Ta)
2.5V @ 1mA
U-MOSV-H
4.5V, 10V
11mOhm @ 12A, 10V
21 nC @ 10 V
±20V
2150 pF @ 10 V
-
1.6W (Ta), 30W (Tc)
-
TPCA8A02-H(TE12LQM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-SOP Advance (5x5)
34A (Ta)
2.3V @ 1mA
U-MOSV-H
4.5V, 10V
5.3mOhm @ 17A, 10V
36 nC @ 10 V
±20V
3430 pF @ 10 V
-
1.6W (Ta), 45W (Tc)
-
TPCA8A04-H(TE12L,Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-SOP Advance (5x5)
44A (Ta)
2.3V @ 1mA
U-MOSV-H
4.5V, 10V
3.2mOhm @ 22A, 10V
59 nC @ 10 V
±20V
5700 pF @ 10 V
-
-
-
TPCP8005-H(TE85L,F
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SMD, Flat Lead
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
PS-8 (2.9x2.4)
11A (Ta)
2.5V @ 1mA
U-MOSV-H
4.5V, 10V
12.9mOhm @ 5.5A, 10V
20 nC @ 10 V
±20V
2150 pF @ 10 V
-
840mW (Ta)
-
TPCC8001-H(TE12LQM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-TSON Advance (3.3x3.3)
22A (Ta)
2.5V @ 1mA
U-MOSV-H
4.5V, 10V
8.3mOhm @ 11A, 10V
27 nC @ 10 V
±20V
2500 pF @ 10 V
-
700mW (Ta), 30W (Tc)
-
TPCC8002-H(TE12LQM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-TSON Advance (3.3x3.3)
22A (Ta)
2.5V @ 1mA
U-MOSV-H
4.5V, 10V
8.3mOhm @ 11A, 10V
27 nC @ 10 V
±20V
2500 pF @ 10 V
-
700mW (Ta), 30W (Tc)
-
TPCC8A01-H(TE12LQM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
N-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
8-TSON Advance (3.3x3.3)
21A (Ta)
2.3V @ 1mA
U-MOSV-H
4.5V, 10V
9.9mOhm @ 10.5A, 10V
20 nC @ 10 V
±20V
1900 pF @ 10 V
-
700mW (Ta), 30W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.