HiPerFET™ Series, Single FETs, MOSFETs

Results:
317
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining317
Applied Filters:
HiPerFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTP3N120
MOSFET N-CH 1200V 3A TO220AB
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
10,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
1200 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
3A (Tc)
4.5Ohm @ 500mA, 10V
5V @ 250µA
10V
42 nC @ 10 V
±20V
1350 pF @ 25 V
200W (Tc)
-
IXFK24N100
MOSFET N-CH 1KV 24A TO-264AA
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
7,628 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
TO-264AA (IXFK)
N-Channel
1000 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
24A (Tc)
390mOhm @ 12A, 10V
5.5V @ 8mA
10V
267 nC @ 10 V
±20V
8700 pF @ 25 V
560W (Tc)
-
IXFR120N20
MOSFET N-CH 200V 105A ISOPLUS247
1+
$40.3099
5+
$38.0704
10+
$35.8310
Quantity
4,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
ISOPLUS247™
N-Channel
200 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
105A (Tc)
17mOhm @ 60A, 10V
4V @ 8mA
10V
360 nC @ 10 V
±20V
9100 pF @ 25 V
417W (Tc)
-
IXFH50N20
MOSFET N-CH 200V 50A TO247AD
1+
$19.0141
5+
$17.9577
10+
$16.9014
Quantity
1,861 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
200 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
50A (Tc)
45mOhm @ 25A, 10V
4V @ 4mA
10V
220 nC @ 10 V
±20V
4400 pF @ 25 V
300W (Tc)
-
IXFH76N07-11
MOSFET N-CH 70V 76A TO247AD
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
1,790 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
70 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
76A (Tc)
11mOhm @ 40A, 10V
3.4V @ 4mA
10V
240 nC @ 10 V
±20V
4400 pF @ 25 V
360W (Tc)
-
IXFN73N30
MOSFET N-CH 300V 73A SOT-227B
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
1,558 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
SOT-227-4, miniBLOC
SOT-227B
N-Channel
300 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
73A (Tc)
45mOhm @ 500mA, 10V
4V @ 8mA
10V
360 nC @ 10 V
±20V
9000 pF @ 25 V
500W (Tc)
-
IXFH26N60Q
MOSFET N-CH 600V 26A TO247AD
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
1,350 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
600 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
26A (Tc)
250mOhm @ 13A, 10V
4.5V @ 4mA
10V
200 nC @ 10 V
±20V
5100 pF @ 25 V
360W (Tc)
-
IXFT52N30Q
MOSFET N-CH 300V 52A TO268
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
1,320 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
N-Channel
300 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
52A (Tc)
60mOhm @ 500mA, 10V
4V @ 4mA
10V
150 nC @ 10 V
±20V
5300 pF @ 25 V
360W (Tc)
-
IXFH75N10
MOSFET N-CH 100V 75A TO247AD
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
1,305 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
100 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
75A (Tc)
20mOhm @ 37.5A, 10V
4V @ 4mA
10V
260 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
-
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
1,012 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
600 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
20A (Tc)
350mOhm @ 10A, 10V
4.5V @ 4mA
10V
170 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
-
IXFH15N100
MOSFET N-CH 1000V 15A TO247AD
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
960 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
1000 V
-
MOSFET (Metal Oxide)
HiPerFET™
-
15A (Tc)
700mOhm @ 500mA, 10V
4.5V @ 4mA
10V
220 nC @ 10 V
±20V
4500 pF @ 25 V
360W (Tc)
-
IXFT52N30Q TRL
MOSFET N-CH 300V 52A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268 (IXFT)
N-Channel
300 V
MOSFET (Metal Oxide)
HiPerFET™
-
52A (Tc)
60mOhm @ 26A, 10V
4V @ 4mA
10V
150 nC @ 10 V
±20V
5300 pF @ 25 V
360W (Tc)
IXFX52N30Q
MOSFET N-CH 300V 52A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-247-3 Variant
PLUS247™-3
N-Channel
300 V
MOSFET (Metal Oxide)
HiPerFET™
-
52A (Tc)
-
-
-
-
-
-
360W (Tc)
IXFH35N30Q
MOSFET N-CH 300V 35A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247AD (IXFH)
N-Channel
300 V
MOSFET (Metal Oxide)
HiPerFET™
-
35A (Tc)
100mOhm @ 17.5A, 10V
4V @ 4mA
10V
200 nC @ 10 V
±20V
4800 pF @ 25 V
300W (Tc)
IXFD80N20Q-8XQ
MOSFET N-CHANNEL 200V DIE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
150°C (TJ)
Die
Die
N-Channel
200 V
MOSFET (Metal Oxide)
HiPerFET™
-
-
-
-
-
-
-
-
-
IXFD26N50Q-72
MOSFET N-CHANNEL 500V DIE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
Die
Die
N-Channel
500 V
MOSFET (Metal Oxide)
HiPerFET™
-
-
-
-
-
-
-
-
-
IXFD23N60Q-72
MOSFET N-CHANNEL 600V DIE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
Die
Die
N-Channel
600 V
MOSFET (Metal Oxide)
HiPerFET™
-
-
-
-
-
-
-
-
-
IXFD14N100-8X
MOSFET N-CHANNEL 1000V DIE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
Die
Die
N-Channel
1000 V
MOSFET (Metal Oxide)
HiPerFET™
-
-
-
-
-
-
-
-
-
IXFC24N50Q
MOSFET N-CH 500V 21A ISOPLUS220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
ISOPLUS220™
ISOPLUS220™
N-Channel
500 V
MOSFET (Metal Oxide)
HiPerFET™
-
21A (Tc)
230mOhm @ 10.5A, 10V
4V @ 4mA
10V
135 nC @ 10 V
±20V
4200 pF @ 25 V
230W (Tc)
IXFM11N80
MOSFET N-CH 800V 11A TO204AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
TO-204AA, TO-3
TO-204AA
N-Channel
800 V
MOSFET (Metal Oxide)
HiPerFET™
-
11A (Tc)
950mOhm @ 5.5A, 10V
4.5V @ 4mA
10V
155 nC @ 10 V
±20V
4200 pF @ 25 V
300W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.