HiPerFET™, Q3 Class Series, Single FETs, MOSFETs

Results:
52
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining52
Applied Filters:
HiPerFET™, Q3 Class
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFR64N60Q3
MOSFET N-CH 600V 42A ISOPLUS247
1+
$73.5211
5+
$69.4366
10+
$65.3521
Quantity
3,330 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
ISOPLUS247™
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
600 V
42A (Tc)
10V
104mOhm @ 32A, 10V
6.5V @ 4mA
190 nC @ 10 V
±30V
9930 pF @ 25 V
568W (Tc)
-
IXFR32N80Q3
MOSFET N-CH 800V 24A ISOPLUS247
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
3,090 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
ISOPLUS247™
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
800 V
24A (Tc)
10V
300mOhm @ 16A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
6940 pF @ 25 V
500W (Tc)
-
IXFT15N100Q3
MOSFET N-CH 1000V 15A TO268
1+
$37.5211
5+
$35.4366
10+
$33.3521
Quantity
2,370 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
TO-268AA
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1000 V
15A (Tc)
10V
1.05Ohm @ 7.5A, 10V
6.5V @ 4mA
64 nC @ 10 V
±30V
3250 pF @ 25 V
690W (Tc)
-
IXFN44N80Q3
MOSFET N-CH 800V 37A SOT227B
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
2,110 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
800 V
37A (Tc)
10V
190mOhm @ 22A, 10V
6.5V @ 8mA
185 nC @ 10 V
±30V
9840 pF @ 25 V
780W (Tc)
-
IXFR24N100Q3
MOSFET N-CH 1000V 18A ISOPLUS247
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
ISOPLUS247™
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1000 V
18A (Tc)
10V
490mOhm @ 12A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7200 pF @ 25 V
500W (Tc)
-
IXFK32N100Q3
MOSFET N-CH 1000V 32A TO264AA
1+
$14.7042
5+
$13.8873
10+
$13.0704
Quantity
751 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1000 V
32A (Tc)
10V
320mOhm @ 16A, 10V
6.5V @ 8mA
195 nC @ 10 V
±30V
9940 pF @ 25 V
1250W (Tc)
-
IXFN62N80Q3
MOSFET N-CH 800V 49A SOT227B
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
800 V
49A (Tc)
10V
140mOhm @ 31A, 10V
6.5V @ 8mA
270 nC @ 10 V
±30V
13600 pF @ 25 V
960W (Tc)
-
IXFH70N20Q3
MOSFET N-CH 200V 70A TO247AD
1+
$18.7606
5+
$17.7183
10+
$16.6761
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD (IXFH)
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
200 V
70A (Tc)
10V
40mOhm @ 35A, 10V
6.5V @ 4mA
67 nC @ 10 V
±20V
3150 pF @ 25 V
690W (Tc)
-
IXFN100N50Q3
MOSFET N-CH 500V 82A SOT227B
1+
$87.4648
5+
$82.6056
10+
$77.7465
Quantity
100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
500 V
82A (Tc)
10V
49mOhm @ 50A, 10V
6.5V @ 8mA
255 nC @ 10 V
±30V
13800 pF @ 25 V
960W (Tc)
-
IXFX24N100Q3
MOSFET N-CH 1000V 24A PLUS247-3
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
30 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
-
PLUS247™-3
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1000 V
24A (Tc)
10V
440mOhm @ 12A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7200 pF @ 25 V
1000W (Tc)
-
IXFH15N100Q3
MOSFET N-CH 1000V 15A TO247AD
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD (IXFH)
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1000 V
15A (Tc)
10V
1.05Ohm @ 7.5A, 10V
6.5V @ 4mA
64 nC @ 10 V
±30V
3250 pF @ 25 V
690W (Tc)
-
IXFN82N60Q3
MOSFET N-CH 600V 66A SOT227B
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
600 V
66A (Tc)
10V
75mOhm @ 41A, 10V
6.5V @ 8mA
275 nC @ 10 V
±30V
13500 pF @ 25 V
960W (Tc)
-
IXFN40N110Q3
MOSFET N-CH 1100V 35A SOT-227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1100 V
35A (Tc)
10V
260mOhm @ 20A, 10V
6.5V @ 8mA
300 nC @ 10 V
±30V
14000 pF @ 25 V
960W (Tc)
-
IXFT70N20Q3
MOSFET N-CH 200V 70A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
TO-268AA
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
200 V
70A (Tc)
10V
40mOhm @ 35A, 10V
6.5V @ 4mA
67 nC @ 10 V
±20V
3150 pF @ 25 V
690W (Tc)
-
IXFK44N80Q3
MOSFET N-CH 800V 44A TO264AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
800 V
44A (Tc)
10V
190mOhm @ 22A, 10V
6.5V @ 8mA
185 nC @ 10 V
±30V
9840 pF @ 25 V
1250W (Tc)
-
IXFX44N80Q3
MOSFET N-CH 800V 44A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
-
PLUS247™-3
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
800 V
44A (Tc)
10V
190mOhm @ 22A, 10V
6.5V @ 8mA
185 nC @ 10 V
±30V
9840 pF @ 25 V
1250W (Tc)
-
IXFK24N100Q3
MOSFET N-CH 1000V 24A TO264AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1000 V
24A (Tc)
10V
440mOhm @ 12A, 10V
6.5V @ 4mA
140 nC @ 10 V
±30V
7200 pF @ 25 V
1000W (Tc)
-
IXFT15N100Q3-TRL
MOSFET N-CH 1000V 15A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
TO-268
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
1000 V
15A (Tc)
10V
1.05Ohm @ 7.5A, 10V
6.5V @ 4mA
64 nC @ 10 V
±30V
3250 pF @ 25 V
690W (Tc)
-
IXFH70N30Q3
MOSFET N-CH 300V 70A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD (IXFH)
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
300 V
70A (Tc)
10V
54mOhm @ 35A, 10V
6.5V @ 4mA
98 nC @ 10 V
±20V
4735 pF @ 25 V
830W (Tc)
-
IXFH44N50Q3
MOSFET N-CH 500V 44A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD (IXFH)
MOSFET (Metal Oxide)
-
HiPerFET™, Q3 Class
500 V
44A (Tc)
10V
140mOhm @ 22A, 10V
6.5V @ 4mA
93 nC @ 10 V
±30V
4800 pF @ 25 V
830W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.