STripFET™ III Series, Single FETs, MOSFETs

Results:
79
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Results remaining79
Applied Filters:
STripFET™ III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STD60N55F3
MOSFET N-CH 55V 80A DPAK
1+
¥4.0563
5+
¥3.8310
10+
¥3.6056
Quantity
80,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
80A (Tc)
4V @ 250µA
10V
8.5mOhm @ 32A, 10V
45 nC @ 10 V
±20V
2200 pF @ 25 V
110W (Tc)
-
STD95N4F3
MOSFET N-CH 40V 80A DPAK
1+
¥0.8873
5+
¥0.8380
10+
¥0.7887
Quantity
63,814 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
80A (Tc)
4V @ 250µA
10V
6.5mOhm @ 40A, 10V
54 nC @ 10 V
±20V
2200 pF @ 25 V
110W (Tc)
-
STS25NH3LL
MOSFET N-CH 30V 25A 8SO
1+
¥10.1408
5+
¥9.5775
10+
¥9.0141
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
25A (Tc)
1V @ 250µA
4.5V, 10V
3.5mOhm @ 12.5A, 10V
40 nC @ 4.5 V
±18V
4450 pF @ 25 V
3.2W (Tc)
-
STP140NF75
MOSFET N-CH 75V 120A TO220AB
1+
¥2.0839
5+
¥1.9682
10+
¥1.8524
Quantity
11,405 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
75 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
120A (Tc)
4V @ 250µA
10V
7.5mOhm @ 70A, 10V
218 nC @ 10 V
±20V
5000 pF @ 25 V
310W (Tc)
-
STP95N4F3
MOSFET N-CH 40V 80A TO220AB
1+
¥0.3803
5+
¥0.3592
10+
¥0.3380
Quantity
7,931 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
80A (Tc)
4V @ 250µA
10V
6.2mOhm @ 40A, 10V
54 nC @ 10 V
±20V
2200 pF @ 25 V
110W (Tc)
-
STH240N75F3-6
MOSFET N-CH 75V 180A H2PAK-6
1+
¥3.8028
5+
¥3.5915
10+
¥3.3803
Quantity
4,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
H2PAK-6
75 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
180A (Tc)
4V @ 250µA
10V
3mOhm @ 90A, 10V
87 nC @ 10 V
±20V
6800 pF @ 25 V
300W (Tc)
-
STB60N55F3
MOSFET N-CH 55V 80A D2PAK
1+
¥5.0704
5+
¥4.7887
10+
¥4.5070
Quantity
3,738 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
80A (Tc)
4V @ 250µA
10V
8.5mOhm @ 32A, 10V
45 nC @ 10 V
±20V
2200 pF @ 25 V
110W (Tc)
-
STL8N10LF3
MOSFET N CH 100V 20A PWRFLT5X6
1+
¥11.4085
5+
¥10.7746
10+
¥10.1408
Quantity
3,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
100 V
-55°C ~ 175°C (TJ)
Automotive
MOSFET (Metal Oxide)
STripFET™ III
-
20A (Tc)
3V @ 250µA
5V, 10V
35mOhm @ 4A, 10V
20.5 nC @ 10 V
±20V
970 pF @ 25 V
4.3W (Ta), 70W (Tc)
AEC-Q101
STV270N4F3
MOSFET N-CH 40V 270A 10POWERSO
1+
¥76.0563
5+
¥71.8310
10+
¥67.6056
Quantity
3,570 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerSO-10 Exposed Bottom Pad
10-PowerSO
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
270A (Tc)
4V @ 250µA
10V
1.5mOhm @ 80A, 10V
150 nC @ 10 V
±20V
7500 pF @ 25 V
300W (Tc)
-
STH300NH02L-6
MOSFET N-CH 24V 180A H2PAK
1+
¥126.7606
5+
¥119.7183
10+
¥112.6761
Quantity
3,057 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
H²PAK
24 V
-55°C ~ 175°C (TJ)
Automotive
MOSFET (Metal Oxide)
STripFET™ III
-
180A (Tc)
1V @ 250µA
5V, 10V
1.2mOhm @ 80A, 10V
109 nC @ 10 V
±20V
7050 pF @ 15 V
300W (Tc)
AEC-Q101
STH270N4F3-6
MOSFET N-CH 40V 180A H2PAK
1+
¥11.4085
5+
¥10.7746
10+
¥10.1408
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
H²PAK
40 V
-55°C ~ 175°C (TJ)
Automotive
MOSFET (Metal Oxide)
STripFET™ III
-
180A (Tc)
4V @ 250µA
10V
1.7mOhm @ 80A, 10V
150 nC @ 10 V
±20V
7400 pF @ 25 V
300W (Tc)
AEC-Q101
STD70N6F3
MOSFET N-CH 60V 70A DPAK
1+
¥10.1408
5+
¥9.5775
10+
¥9.0141
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
70A (Tc)
4V @ 250µA
10V
10.5mOhm @ 35A, 10V
35 nC @ 10 V
±20V
2200 pF @ 25 V
110W (Tc)
-
STB140NF75T4
MOSFET N-CH 75V 120A D2PAK
1+
¥2.5352
5+
¥2.3944
10+
¥2.2535
Quantity
2,079 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
75 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
120A (Tc)
4V @ 250µA
10V
7.5mOhm @ 70A, 10V
218 nC @ 10 V
±20V
5000 pF @ 25 V
310W (Tc)
-
STH180N10F3-2
MOSFET N-CH 100V 180A H2PAK-2
1+
¥8.1127
5+
¥7.6620
10+
¥7.2113
Quantity
2,006 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
H2Pak-2
100 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
180A (Tc)
4V @ 250µA
10V
4.5mOhm @ 60A, 10V
114.6 nC @ 10 V
±20V
6665 pF @ 25 V
315W (Tc)
-
STP180N10F3
MOSFET N-CH 100V 120A TO220
1+
¥8.8732
5+
¥8.3803
10+
¥7.8873
Quantity
1,344 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
100 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
120A (Tc)
4V @ 250µA
10V
5.1mOhm @ 60A, 10V
114.6 nC @ 10 V
±20V
6665 pF @ 25 V
315W (Tc)
-
STB270N4F3
MOSFET N-CH 40V 160A D2PAK
1+
¥5.0704
5+
¥4.7887
10+
¥4.5070
Quantity
980 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
40 V
-55°C ~ 175°C (TJ)
Automotive
MOSFET (Metal Oxide)
STripFET™ III
-
160A (Tc)
4V @ 250µA
10V
2.5mOhm @ 80A, 10V
150 nC @ 10 V
±20V
7400 pF @ 25 V
330W (Tc)
AEC-Q101
STB100NF03L-03-1
MOSFET N-CH 30V 100A I2PAK
1+
¥1.5211
5+
¥1.4366
10+
¥1.3521
Quantity
948 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
30 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
100A (Tc)
2.5V @ 250µA
4.5V, 10V
3.2mOhm @ 50A, 10V
88 nC @ 5 V
±16V
6200 pF @ 25 V
300W (Tc)
-
STV240N75F3
MOSFET N-CH 75V 240A 10POWERSO
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerSO-10 Exposed Bottom Pad
10-PowerSO
75 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
240A (Tc)
4V @ 250µA
10V
2.6mOhm @ 120A, 10V
100 nC @ 10 V
±20V
6800 pF @ 25 V
300W (Tc)
-
STV250N55F3
MOSFET N-CH 55V 200A 10POWERSO
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerSO-10 Exposed Bottom Pad
10-PowerSO
55 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
200A (Tc)
4V @ 250µA
10V
2.2mOhm @ 75A, 10V
100 nC @ 10 V
±20V
6800 pF @ 25 V
300W (Tc)
-
STH180N10F3-6
MOSFET N-CH 100V 180A H2PAK-6
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
H2PAK-6
100 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
STripFET™ III
-
180A (Tc)
4V @ 250µA
10V
4.5mOhm @ 60A, 10V
114.6 nC @ 10 V
±20V
6665 pF @ 25 V
315W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.