π-MOSV Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining6
Applied Filters:
π-MOSV
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureDrain to Source Voltage (Vdss)Package / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationSeries
SSM3K357R,LF
1+
$0.2338
5+
$0.2208
10+
$0.2078
Quantity
74,405 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
60 V
SOT-23-3 Flat Leads
-
SOT-23F
MOSFET (Metal Oxide)
-
650mA (Ta)
1.8Ohm @ 150mA, 5V
2V @ 1mA
3V, 5V
1.5 nC @ 5 V
±12V
60 pF @ 12 V
1W (Ta)
-
π-MOSV
SSM3K17FU,LF
1+
$0.1699
5+
$0.1604
10+
$0.1510
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
50 V
SC-70, SOT-323
-
USM
MOSFET (Metal Oxide)
-
100mA (Ta)
20Ohm @ 10mA, 4V
1.5V @ 1µA
2.5V, 4V
-
±7V
7 pF @ 3 V
150mW (Ta)
-
π-MOSV
SSM3K2615R,LF
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
457 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
60 V
SOT-23-3 Flat Leads
-
SOT-23F
MOSFET (Metal Oxide)
-
2A (Ta)
300mOhm @ 1A, 10V
2V @ 1mA
3.3V, 10V
-
±20V
150 pF @ 10 V
1W (Ta)
-
π-MOSV
TPCA8010-H(TE12L,Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
200 V
8-PowerVDFN
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
5.5A (Ta)
450mOhm @ 2.7A, 10V
4V @ 1mA
10V
10 nC @ 10 V
±20V
600 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
π-MOSV
TPCA8010-H(TE12LQM
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
200 V
8-PowerVDFN
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
5.5A (Ta)
450mOhm @ 2.7A, 10V
4V @ 1mA
10V
10 nC @ 10 V
±20V
600 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
π-MOSV
SSM3K2615TU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
60 V
3-SMD, Flat Leads
-
UFM
MOSFET (Metal Oxide)
-
2A (Ta)
300mOhm @ 1A, 10V
2V @ 1mA
3.3V, 10V
6 nC @ 10 V
±20V
150 pF @ 10 V
800mW (Ta)
-
π-MOSV

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.