G3R™ Series, Single FETs, MOSFETs

Results:
24
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Type
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Technology
Results remaining24
Applied Filters:
G3R™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)Operating TemperatureSupplier Device PackageGradeFET FeatureSeriesTechnologyCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
4,528 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
1200 V
-55°C ~ 175°C (TJ)
TO-247-3
-
-
G3R™
SiCFET (Silicon Carbide)
22A (Tc)
15V
192mOhm @ 10A, 15V
2.69V @ 5mA
28 nC @ 15 V
±15V
730 pF @ 800 V
123W (Tc)
-
G3R60MT07D
750V 60M TO-247-3 G3R SIC MOSFET
1+
$13.4176
5+
$12.6722
10+
$11.9268
Quantity
1,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
750 V
-
TO-247-3
-
-
G3R™
SiCFET (Silicon Carbide)
-
-
-
-
-
+20V, -10V
-
-
-
G3R75MT12J
SIC MOSFET N-CH 42A TO263-7
1+
$15.4648
5+
$14.6056
10+
$13.7465
Quantity
228 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
1200 V
-55°C ~ 175°C (TJ)
TO-263-7
-
-
G3R™
SiCFET (Silicon Carbide)
42A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
±15V
1560 pF @ 800 V
224W (Tc)
-
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
1700 V
-55°C ~ 175°C (TJ)
TO-247-3
-
-
G3R™
SiCFET (Silicon Carbide)
21A (Tc)
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
51 nC @ 15 V
±15V
1272 pF @ 1000 V
175W (Tc)
-
G3R40MT12D
SIC MOSFET N-CH 71A TO247-3
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
1200 V
-55°C ~ 175°C (TJ)
TO-247-3
-
-
G3R™
SiCFET (Silicon Carbide)
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
333W (Tc)
-
G3R350MT12J
SIC MOSFET N-CH 11A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
1200 V
-55°C ~ 175°C (TJ)
TO-263-7
-
-
G3R™
SiCFET (Silicon Carbide)
11A (Tc)
15V
420mOhm @ 4A, 15V
2.69V @ 2mA
12 nC @ 15 V
±15V
334 pF @ 800 V
75W (Tc)
-
G3R45MT17K
SIC MOSFET N-CH 61A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-4
1700 V
-55°C ~ 175°C (TJ)
TO-247-4
-
-
G3R™
SiCFET (Silicon Carbide)
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
438W (Tc)
-
G3R160MT12J
SIC MOSFET N-CH 19A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
1200 V
-55°C ~ 175°C (TJ)
TO-263-7
-
-
G3R™
SiCFET (Silicon Carbide)
19A (Tc)
15V
208mOhm @ 10A, 15V
2.7V @ 5mA (Typ)
23 nC @ 15 V
+20V, -10V
724 pF @ 800 V
128W (Tc)
-
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-4
1700 V
-55°C ~ 175°C (TJ)
TO-247-4
-
-
G3R™
SiCFET (Silicon Carbide)
124A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
809W (Tc)
-
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
1700 V
-55°C ~ 175°C (TJ)
SOT-227
-
-
G3R™
SiCFET (Silicon Carbide)
100A (Tc)
15V
26mOhm @ 75A, 15V
2.7V @ 15mA
400 nC @ 15 V
±15V
10187 pF @ 1000 V
523W (Tc)
-
G3R60MT07K
750V 60M TO-247-4 G3R SIC MOSFET
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-4
750 V
-
TO-247-4
-
-
G3R™
SiCFET (Silicon Carbide)
-
-
-
-
-
+20V, -10V
-
-
-
G3R45MT17D
SIC MOSFET N-CH 61A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
1700 V
-55°C ~ 175°C (TJ)
TO-247-3
-
-
G3R™
SiCFET (Silicon Carbide)
61A (Tc)
15V
58mOhm @ 40A, 15V
2.7V @ 8mA
182 nC @ 15 V
±15V
4523 pF @ 1000 V
438W (Tc)
-
G3R60MT07J
750V 60M TO-263-7 G3R SIC MOSFET
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
750 V
-
TO-263-7
-
-
G3R™
SiCFET (Silicon Carbide)
-
-
-
-
-
+20V, -10V
-
-
-
G3R20MT12K
SIC MOSFET N-CH 128A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-4
1200 V
-55°C ~ 175°C (TJ)
TO-247-4
-
-
G3R™
SiCFET (Silicon Carbide)
128A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
±15V
5873 pF @ 800 V
542W (Tc)
-
G3R20MT12N
SIC MOSFET N-CH 105A SOT227
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
SOT-227-4, miniBLOC
1200 V
-55°C ~ 175°C (TJ)
SOT-227
-
-
G3R™
SiCFET (Silicon Carbide)
105A (Tc)
15V
24mOhm @ 60A, 15V
2.69V @ 15mA
219 nC @ 15 V
+20V, -10V
5873 pF @ 800 V
365W (Tc)
-
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
1700 V
-55°C ~ 175°C (TJ)
TO-247-3
-
-
G3R™
SiCFET (Silicon Carbide)
9A (Tc)
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
18 nC @ 15 V
±15V
454 pF @ 1000 V
88W (Tc)
-
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-4
1200 V
-55°C ~ 175°C (TJ)
TO-247-4
-
-
G3R™
SiCFET (Silicon Carbide)
41A (Tc)
15V
90mOhm @ 20A, 15V
2.69V @ 7.5mA
54 nC @ 15 V
+22V, -10V
1560 pF @ 800 V
207W (Tc)
-
G3R40MT12K
SIC MOSFET N-CH 71A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-4
1200 V
-55°C ~ 175°C (TJ)
TO-247-4
-
-
G3R™
SiCFET (Silicon Carbide)
71A (Tc)
15V
48mOhm @ 35A, 15V
2.69V @ 10mA
106 nC @ 15 V
±15V
2929 pF @ 800 V
333W (Tc)
-
G3R30MT12K
SIC MOSFET N-CH 90A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-4
1200 V
-55°C ~ 175°C (TJ)
TO-247-4
-
-
G3R™
SiCFET (Silicon Carbide)
90A (Tc)
15V
36mOhm @ 50A, 15V
2.69V @ 12mA
155 nC @ 15 V
±15V
3901 pF @ 800 V
400W (Tc)
-
G3R40MT12J
SIC MOSFET N-CH 75A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
1200 V
-55°C ~ 175°C (TJ)
TO-263-7
-
-
G3R™
SiCFET (Silicon Carbide)
75A (Tc)
15V
48mOhm @ 35A, 15V
2.7V @ 18mA (Typ)
106 nC @ 15 V
±15V
2929 pF @ 800 V
374W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.