E-Series Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining6
Applied Filters:
E-Series
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageFET FeatureTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGradeSeries
E3M0065090D
SICFET N-CH 900V 35A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
SiCFET (Silicon Carbide)
900 V
35A (Tc)
15V
84.5mOhm @ 20A, 15V
3.5V @ 5mA
30.4 nC @ 15 V
+18V, -8V
660 pF @ 600 V
125W (Tc)
-
Automotive
E-Series
E3M0280090D
SICFET N-CH 900V 11.5A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
SiCFET (Silicon Carbide)
900 V
11.5A (Tc)
15V
360mOhm @ 7.5A, 15V
3.5V @ 1.2mA
9.5 nC @ 15 V
+18V, -8V
150 pF @ 600 V
54W (Tc)
-
Automotive
E-Series
E3M0120090D
SICFET N-CH 900V 23A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
SiCFET (Silicon Carbide)
900 V
23A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
17.3 nC @ 15 V
+18V, -8V
350 pF @ 600 V
97W (Tc)
-
Automotive
E-Series
E3M0120090J
900V 120M AUTOMOTIVE SIC MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
TO-263-7
-
SiCFET (Silicon Carbide)
900 V
22A (Tc)
15V
155mOhm @ 15A, 15V
3.5V @ 3mA
18 nC @ 15 V
+15V, -4V
414 pF @ 600 V
83W (Tc)
-
Automotive
E-Series
E3M0075120D
1200V AUTOMOTIVE SIC 75MOHM FET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
SiCFET (Silicon Carbide)
1200 V
32A (Tc)
15V
97.5mOhm @ 17.9A, 15V
3.6V @ 5mA
57 nC @ 15 V
+19V, -8V
1480 pF @ 1000 V
145W (Tc)
-
Automotive
E-Series
E3M0075120K
1200V AUTOMOTIVE SIC 75MOHM FET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-247-4
TO-247-4L
-
SiCFET (Silicon Carbide)
1200 V
32A (Tc)
15V
97.5mOhm @ 17.9A, 15V
3.6V @ 5mA
55 nC @ 15 V
+19V, -8V
1480 pF @ 1000 V
145W (Tc)
-
Automotive
E-Series

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.