OptiMOS™ 5 Series, Single FETs, MOSFETs

Results:
127
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining127
Applied Filters:
OptiMOS™ 5
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeDrain to Source Voltage (Vdss)Operating TemperatureGradePackage / CaseTechnologyFET FeatureSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualificationCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ Id
ISC015N06NM5LF2ATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
10V
1.55mOhm @ 50A, 10V
113 nC @ 10 V
±20V
9000 pF @ 30 V
3W (Ta), 217W (Tc)
PG-TDSON-8 FL
-
32A (Ta), 275A (Tc)
3.45V @ 120µA
BSC146N10LS5ATMA1
MOSFET N-CH 100V 44A TDSON-8-6
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
76,108 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
4.5V, 10V
14.6mOhm @ 22A, 10V
10 nC @ 4.5 V
±20V
1300 pF @ 50 V
2.5W (Ta), 52W (Tc)
PG-TDSON-8-6
-
44A (Tc)
2.3V @ 23µA
ISZ0703NLSATMA1
MOSFET N-CH 60V 13A/56A TSDSON
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
65,288 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
4.5V, 10V
7.3mOhm @ 20A, 10V
23 nC @ 10 V
±20V
1400 pF @ 30 V
2.5W (Ta), 44W (Tc)
PG-TSDSON-8-25
-
13A (Ta), 56A (Tc)
2.3V @ 15µA
BSZ070N08LS5ATMA1
MOSFET N-CH 80V 40A TSDSON
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 150°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
Standard
OptiMOS™ 5
4.5V, 10V
7mOhm @ 20A, 10V
5 nC @ 4.5 V
±20V
2340 pF @ 40 V
69W (Tc)
PG-TSDSON-8-FL
-
40A (Tc)
2.3V @ 36µA
IPT014N08NM5ATMA1
MOSFET N-CH 80V 37A/331A HSOF-8
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
-
8-PowerSFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
1.4mOhm @ 150A, 10V
200 nC @ 10 V
±20V
14000 pF @ 40 V
300W (Tc)
PG-HSOF-8-1
-
37A (Ta), 331A (Tc)
3.8V @ 280µA
BSC025N08LS5ATMA1
MOSFET N-CH 80V 100A TDSON-8-7
1+
$2.6040
5+
$2.4593
10+
$2.3147
Quantity
16,816 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 150°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
4.5V, 10V
2.5mOhm @ 50A, 10V
55 nC @ 4.5 V
±20V
7500 pF @ 40 V
2.5W (Ta), 156W (Tc)
PG-TDSON-8-7
-
100A (Tc)
2.3V @ 115µA
BSZ146N10LS5ATMA1
MOSFET N-CH 100V 40A TSDSON
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
16,778 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
Standard
OptiMOS™ 5
4.5V, 10V
14.6mOhm @ 20A, 10V
3.2 nC @ 4.5 V
±20V
1300 pF @ 50 V
52W (Tc)
PG-TSDSON-8-FL
-
40A (Tc)
2.3V @ 23µA
IPP018N10N5XKSA1
1+
$6.8391
5+
$6.4591
10+
$6.0792
Quantity
13,006 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
1.83mOhm @ 100A, 10V
210 nC @ 10 V
±20V
16000 pF @ 50 V
3.8W (Ta), 375W (Tc)
PG-TO220-3
-
205A (Tc)
3.8V @ 270µA
BSC096N10LS5ATMA1
MOSFET N-CH 100V 40A TDSON-8-6
1+
$1.9014
5+
$1.7958
10+
$1.6901
Quantity
11,964 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
4.5V, 10V
9.6mOhm @ 20A, 10V
14.6 nC @ 4.5 V
±20V
2100 pF @ 50 V
3W (Ta), 83W (Tc)
PG-TDSON-8-6
-
40A (Tc)
2.3V @ 36µA
BSC019N08NS5ATMA1
MOSFET N-CH 80V 28A/237A TSON-8
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
11,458 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
1.9mOhm @ 50A, 10V
117 nC @ 10 V
±20V
8600 pF @ 40 V
3W (Ta), 214W (Tc)
PG-TSON-8-3
-
28A (Ta), 237A (Tc)
3.8V @ 146µA
BSC070N10NS5SCATMA1
MOSFET N-CH 100V 14A/82A 8SWSON
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
10,571 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
7mOhm @ 40A, 10V
38 nC @ 10 V
±20V
2700 pF @ 50 V
3W (Ta), 100W (Tc)
PG-WSON-8-2
-
14A (Ta), 82A (Tc)
3.8V @ 50µA
IPB018N10N5ATMA1
1+
$6.9845
5+
$6.5965
10+
$6.2085
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
1.83mOhm @ 100A, 10V
210 nC @ 10 V
±20V
16000 pF @ 50 V
3.8W (Ta), 375W (Tc)
PG-TO263-3
-
33A (Ta), 176A (Tc)
3.8V @ 270µA
IPTC039N15NM5ATMA1
1+
$12.2813
5+
$11.5990
10+
$10.9167
Quantity
9,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150 V
-55°C ~ 175°C (TJ)
-
16-PowerSOP Module
MOSFET (Metal Oxide)
-
OptiMOS™ 5
8V, 10V
3.9mOhm @ 50A, 10V
93 nC @ 10 V
±20V
7300 pF @ 75 V
3.8W (Ta), 319W (Tc)
PG-HDSOP-16-2
-
21A (Ta), 190A (Tc)
4.6V @ 243µA
BSC0804LSATMA1
MOSFET N-CH 100V 40A TDSON-8-6
1+
$5.3239
5+
$5.0282
10+
$4.7324
Quantity
4,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
4.5V, 10V
9.6mOhm @ 20A, 10V
14.6 nC @ 4.5 V
±20V
2100 pF @ 50 V
83W (Tc)
PG-TDSON-8-6
-
40A (Tc)
2.3V @ 36µA
BSC0802LSATMA1
MOSFET N-CH 100V 20A/100A TDSON
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
4,775 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
4.5V, 10V
3.4mOhm @ 50A, 10V
46 nC @ 4.5 V
±20V
6500 pF @ 50 V
156W (Tc)
PG-TDSON-8-7
-
20A (Ta), 100A (Tc)
2.3V @ 115µA
IPTG054N15NM5ATMA1
1+
$8.0011
5+
$7.5566
10+
$7.1121
Quantity
4,680 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150 V
-55°C ~ 175°C (TJ)
-
8-PowerSMD, Gull Wing
MOSFET (Metal Oxide)
-
OptiMOS™ 5
8V, 10V
5.4mOhm @ 50A, 10V
73 nC @ 10 V
±20V
5700 pF @ 75 V
3.8W (Ta), 250W (Tc)
PG-HSOG-8
-
17.5A (Ta), 143A (Tc)
4.6V @ 191µA
BSZ0602LSATMA1
MOSFET N-CH 80V 13A/40A TSDSON
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
3,038 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 150°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
4.5V, 10V
7mOhm @ 20A, 10V
18 nC @ 4.5 V
±20V
2340 pF @ 40 V
69W (Tc)
PG-TDSON-8 FL
-
13A (Ta), 40A (Tc)
2.3V @ 36µA
BSC040N10NS5SCATMA1
MOSFET N-CH 100V 140A WSON-8
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
2,664 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 175°C (TJ)
-
8-PowerWDFN
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
4mOhm @ 50A, 10V
72 nC @ 10 V
±20V
5300 pF @ 50 V
3W (Ta), 167W (Tc)
PG-WSON-8-2
-
140A (Tc)
3.8V @ 95µA
IPTG007N06NM5ATMA1
MOSFET N-CH 60V 53A/454A HSOG-8
1+
$5.3239
5+
$5.0282
10+
$4.7324
Quantity
1,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
8-PowerSMD, Gull Wing
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
0.75mOhm @ 150A, 10V
261 nC @ 10 V
±20V
21000 pF @ 30 V
3.8W (Ta), 375W (Tc)
PG-HSOG-8-1
-
53A (Ta), 454A (Tc)
3.3V @ 280µA
IAUS300N08S5N011TATMA1
MOSFET N-CH 80V 300A HDSOP-16-2
1+
$35.4930
5+
$33.5211
10+
$31.5493
Quantity
1,515 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
80 V
-55°C ~ 175°C (TJ)
-
16-PowerSOP Module
MOSFET (Metal Oxide)
-
OptiMOS™ 5
6V, 10V
1.1mOhm @ 100A, 10V
231 nC @ 10 V
±20V
16250 pF @ 40 V
375W (Tc)
PG-HDSOP-16-2
-
300A (Tj)
3.8V @ 275µA

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.