HiPerFET™, Ultra X Series, Single FETs, MOSFETs

Results:
58
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining58
Applied Filters:
HiPerFET™, Ultra X
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXFP14N85X
MOSFET N-CH 850V 14A TO220AB
1+
$6.8451
5+
$6.4648
10+
$6.0845
Quantity
4,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
14A (Tc)
10V
550mOhm @ 500mA, 10V
5.5V @ 1mA
30 nC @ 10 V
±30V
1043 pF @ 25 V
460W (Tc)
TO-220AB (IXFP)
-
IXFH50N85X
MOSFET N-CH 850V 50A TO247
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
1,825 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
50A (Tc)
10V
105mOhm @ 500mA, 10V
5.5V @ 4mA
152 nC @ 10 V
±30V
4480 pF @ 25 V
890W (Tc)
TO-247 (IXTH)
-
IXFH20N85X
MOSFET N-CH 850V 20A TO247
1+
$4.8169
5+
$4.5493
10+
$4.2817
Quantity
1,271 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
20A (Tc)
10V
330mOhm @ 500mA, 10V
5.5V @ 2.5mA
63 nC @ 10 V
±30V
1660 pF @ 25 V
540W (Tc)
TO-247 (IXTH)
-
IXFK52N100X
MOSFET N-CH 1000V 52A TO264
1+
$121.6901
5+
$114.9296
10+
$108.1690
Quantity
700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
1000 V
52A (Tc)
10V
125mOhm @ 26A, 10V
6V @ 4mA
245 nC @ 10 V
±30V
6725 pF @ 25 V
1250W (Tc)
TO-264
-
IXFP30N60X
MOSFET N-CH 600V 30A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
600 V
30A (Tc)
10V
155mOhm @ 15A, 10V
4.5V @ 4mA
56 nC @ 10 V
±30V
2270 pF @ 25 V
500W (Tc)
TO-220
-
IXFH32N100X
MOSFET N-CH 1000V 32A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
1000 V
32A (Tc)
10V
220mOhm @ 16A, 10V
6V @ 4mA
130 nC @ 10 V
±30V
4075 pF @ 25 V
890W (Tc)
TO-247
-
IXFH40N85X
MOSFET N-CH 850V 40A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
40A (Tc)
10V
145mOhm @ 500mA, 10V
5.5V @ 4mA
98 nC @ 10 V
±30V
3700 pF @ 25 V
860W (Tc)
TO-247
-
IXFH30N60X
MOSFET N-CH 600V 30A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
600 V
30A (Tc)
10V
155mOhm @ 15A, 10V
4.5V @ 4mA
56 nC @ 10 V
±30V
2270 pF @ 25 V
500W (Tc)
TO-247
-
IXFN66N85X
MOSFET N-CH 850V 65A SOT227B
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
SOT-227-4, miniBLOC
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
65A (Tc)
10V
65mOhm @ 33A, 10V
5.5V @ 8mA
230 nC @ 10 V
±30V
8900 pF @ 25 V
830W (Tc)
SOT-227B
-
IXFN74N100X
MOSFET N-CH 1000V 74A SOT227B
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
SOT-227-4, miniBLOC
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
1000 V
74A (Tc)
10V
66mOhm @ 37A, 10V
5.5V @ 8mA
425 nC @ 10 V
±30V
17000 pF @ 25 V
1170W (Tc)
SOT-227B
-
IXFT40N85XHV
MOSFET N-CH 850V 40A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
40A (Tc)
10V
145mOhm @ 500mA, 10V
5.5V @ 4mA
98 nC @ 10 V
±30V
3700 pF @ 25 V
860W (Tc)
TO-268HV (IXFT)
-
IXFP18N60X
MOSFET N-CH 600V 18A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
600 V
18A (Tc)
10V
230mOhm @ 9A, 10V
4.5V @ 1.5mA
35 nC @ 10 V
±30V
1440 pF @ 25 V
320W (Tc)
TO-220-3
-
IXFK32N100X
MOSFET N-CH 1000V 32A TO264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
1000 V
32A (Tc)
10V
220mOhm @ 16A, 10V
6V @ 4mA
130 nC @ 10 V
±30V
4075 pF @ 25 V
890W (Tc)
TO-264
-
IXFA24N60X
MOSFET N-CH 600V 24A TO263AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
600 V
24A (Tc)
10V
175mOhm @ 12A, 10V
4.5V @ 2.5mA
47 nC @ 10 V
±30V
1910 pF @ 25 V
400W (Tc)
TO-263AA (IXFA)
-
IXFA4N85X
MOSFET N-CH 850V 3.5A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
3.5A (Tc)
10V
2.5Ohm @ 2A, 10V
5.5V @ 250µA
7 nC @ 10 V
±30V
247 pF @ 25 V
150W (Tc)
TO-263 (IXFA)
-
IXFH26N100X
MOSFET N-CH 1000V 26A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
1000 V
26A (Tc)
10V
320mOhm @ 13A, 10V
6V @ 4mA
113 nC @ 10 V
±30V
3290 pF @ 25 V
860W (Tc)
TO-247
-
IXFT50N85XHV
MOSFET N-CH 850V 50A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
50A (Tc)
10V
105mOhm @ 500mA, 10V
5.5V @ 4mA
152 nC @ 10 V
±30V
4480 pF @ 25 V
890W (Tc)
TO-268HV (IXFT)
-
IXFY4N85X
MOSFET N-CH 850V 3.5A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
3.5A (Tc)
10V
2.5Ohm @ 2A, 10V
5.5V @ 250µA
7 nC @ 10 V
±30V
247 pF @ 25 V
150W (Tc)
TO-252AA
-
IXFN52N100X
MOSFET N-CH 1000V 44A SOT227B
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
SOT-227-4, miniBLOC
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
1000 V
44A (Tc)
10V
125mOhm @ 26A, 10V
6V @ 4mA
245 nC @ 10 V
±30V
6725 pF @ 25 V
830W (Tc)
SOT-227B
-
IXFB90N85X
MOSFET N-CH 850V 90A PLUS264
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-264-3, TO-264AA
N-Channel
-
MOSFET (Metal Oxide)
-
HiPerFET™, Ultra X
850 V
90A (Tc)
10V
41mOhm @ 500mA, 10V
5.5V @ 8mA
340 nC @ 10 V
±30V
13300 pF @ 25 V
1785W (Tc)
PLUS264™
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.