CoolMOS™ P6 Series, Single FETs, MOSFETs

Results:
48
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining48
Applied Filters:
CoolMOS™ P6
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD60R380P6ATMA1
MOSFET N-CH 600V 10.6A TO252-3
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
15,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
10.6A (Tc)
10V
380mOhm @ 3.8A, 10V
4.5V @ 320µA
19 nC @ 10 V
±20V
877 pF @ 100 V
83W (Tc)
-
IPB60R160P6ATMA1
MOSFET N-CH 600V 23.8A D2PAK
1+
$1.6479
5+
$1.5563
10+
$1.4648
Quantity
7,424 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
23.8A (Tc)
10V
160mOhm @ 9A, 10V
4.5V @ 750µA
44 nC @ 10 V
±20V
2080 pF @ 100 V
176W (Tc)
-
IPW60R041P6FKSA1
MOSFET N-CH 600V 77.5A TO247-3
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
6,750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
PG-TO247-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
77.5A (Tc)
10V
41mOhm @ 35.5A, 10V
4.5V @ 2.96mA
170 nC @ 10 V
±20V
8180 pF @ 100 V
481W (Tc)
-
IPD60R600P6
MOSFET N-CH 600V 7.3A TO252-3
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
5,626 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
-
12 nC @ 10 V
±20V
557 pF @ 100 V
63W (Tc)
-
IPL60R650P6SATMA1
MOSFET N-CH 600V 6.7A 8THINPAK
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
4,840 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
8-ThinPak (5x6)
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
6.7A (Tc)
10V
650mOhm @ 2.4A, 10V
4.5V @ 200µA
12 nC @ 10 V
±20V
557 pF @ 100 V
56.8W (Tc)
-
IPD60R600P6ATMA1
MOSFET N-CH 600V 7.3A TO252-3
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
2,513 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
4.5V @ 200µA
12 nC @ 10 V
±20V
557 pF @ 100 V
63W (Tc)
-
IPP60R380P6
POWER FIELD-EFFECT TRANSISTOR
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
2,221 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
PG-TO220-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
-
10.6A (Tc)
-
-
-
-
-
-
-
-
IPP60R099P6XKSA1
MOSFET N-CH 600V 37.9A TO220-3
1+
$5.1972
5+
$4.9085
10+
$4.6197
Quantity
500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
PG-TO220-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
37.9A (Tc)
10V
99mOhm @ 14.5A, 10V
4.5V @ 1.21mA
70 nC @ 10 V
±20V
3330 pF @ 100 V
278W (Tc)
-
IPW60R099P6XKSA1
MOSFET N-CH 600V 37.9A TO247-3
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
PG-TO247-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
37.9A (Tc)
10V
99mOhm @ 14.5A, 10V
4.5V @ 1.21mA
70 nC @ 10 V
±20V
3330 pF @ 100 V
278W (Tc)
-
IPA60R380P6XKSA1
MOSFET N-CH 600V 10.6A TO220-FP
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
60 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
10.6A (Tc)
10V
380mOhm @ 3.8A, 10V
4.5V @ 320µA
19 nC @ 10 V
±20V
877 pF @ 100 V
31W (Tc)
-
IPW60R230P6FKSA1
MOSFET N-CH 600V 16.8A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
PG-TO247-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
16.8A (Tc)
10V
230mOhm @ 6.4A, 10V
4.5V @ 530µA
31 nC @ 10 V
±20V
1450 pF @ 100 V
126W (Tc)
-
IPL60R255P6AUMA1
MOSFET N-CH 600V 15.9A 4VSON
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
15.9A (Tc)
10V
255mOhm @ 6.4A, 10V
4.5V @ 530µA
31 nC @ 10 V
±20V
1450 pF @ 100 V
126W (Tc)
-
IPD60R380P6BTMA1
MOSFET N-CH 600V 10.6A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
10.6A (Tc)
10V
380mOhm @ 3.8A, 10V
4.5V @ 320µA
19 nC @ 10 V
±20V
877 pF @ 100 V
83W (Tc)
-
IPP60R600P6XKSA1
MOSFET N-CH 600V 7.3A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
-
PG-TO220-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
4.5V @ 200µA
12 nC @ 10 V
±20V
557 pF @ 100 V
63W (Tc)
-
IPB60R330P6ATMA1
MOSFET N-CH 600V 12A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
12A (Tc)
10V
330mOhm @ 4.5A, 10V
4.5V @ 370µA
22 nC @ 10 V
±20V
1010 pF @ 100 V
93W (Tc)
-
IPB60R600P6ATMA1
MOSFET N-CH 600V 7.3A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
4.5V @ 200µA
12 nC @ 10 V
±20V
557 pF @ 100 V
63W (Tc)
-
IPB65R065C7ATMA1
MOSFET N-CH 600V 7.3A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
4.5V @ 200µA
12 nC @ 10 V
±20V
557 pF @ 100 V
171W (Tc)
-
IPZ60R041P6FKSA1
MOSFET N-CH 600V 77.5A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
-
PG-TO247-4
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
77.5A (Tc)
10V
41mOhm @ 35.5A, 10V
4.5V @ 2.96mA
170 nC @ 10 V
±20V
8180 pF @ 100 V
481W (Tc)
-
IPZ60R125P6FKSA1
MOSFET N-CH 600V 37.9A TO247-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
-
PG-TO247-4
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
37.9A (Tc)
10V
99mOhm @ 14.5A, 10V
4.5V @ 1.21mA
70 nC @ 10 V
±20V
3330 pF @ 100 V
219W (Tc)
-
IPW60R330P6FKSA1
MOSFET N-CH 600V 12A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
PG-TO247-3
MOSFET (Metal Oxide)
-
CoolMOS™ P6
600 V
12A (Tc)
10V
330mOhm @ 4.5A, 10V
4.5V @ 370µA
22 nC @ 10 V
±20V
1010 pF @ 100 V
93W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.