FASTIRFET™, HEXFET® Series, Single FETs, MOSFETs

Results:
14
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Vgs (Max)
Results remaining14
Applied Filters:
FASTIRFET™, HEXFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeSupplier Device PackageOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradePackage / CaseTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IRFHM4234TRPBF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-TQFN Exposed Pad
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
20A (Ta)
2.1V @ 25µA
4.5V, 10V
4.4mOhm @ 30A, 10V
17 nC @ 10 V
±20V
1011 pF @ 13 V
2.8W (Ta), 28W (Tc)
-
IRFHM4234TRPBF
MOSFET N-CH 25V 20A PQFN
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
37,442 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-TQFN Exposed Pad
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
20A (Ta)
2.1V @ 25µA
4.5V, 10V
4.4mOhm @ 30A, 10V
17 nC @ 10 V
±20V
1011 pF @ 13 V
2.8W (Ta), 28W (Tc)
-
IRFH7191TRPBF
MOSFET N-CH 100V 15A/80A PQFN
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
24,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
15A (Ta), 80A (Tc)
3.6V @ 100µA
10V
8mOhm @ 48A, 10V
39 nC @ 10 V
±20V
1685 pF @ 50 V
3.6W (Ta), 104W (Tc)
-
IRFH7184TRPBF
MOSFET N-CH 100V 20A/128A PQFN
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
13,047 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
20A (Ta), 128A (Tc)
3.6V @ 150µA
10V
4.8mOhm @ 50A, 10V
54 nC @ 10 V
±20V
2320 pF @ 50 V
3.9W (Ta), 156W (Tc)
-
IRFH7185TRPBF
MOSFET N CH 100V 19A 8QFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
19A (Ta)
3.6V @ 150µA
10V
5.2mOhm @ 50A, 10V
54 nC @ 10 V
±20V
2320 pF @ 50 V
3.6W (Ta), 160W (Tc)
-
IRFH7190TRPBF
MOSFET N-CH 100V 15A/82A PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
15A (Ta), 82A (Tc)
3.6V @ 100µA
10V
7.5mOhm @ 49A, 10V
39 nC @ 10 V
±20V
1685 pF @ 50 V
3.6W (Ta), 104W (Tc)
-
IRFH7187TRPBF
MOSFET N-CH 100V 18A/105A 8PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerVDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
18A (Ta), 105A (Tc)
3.6V @ 150µA
10V
6mOhm @ 50A, 10V
50 nC @ 10 V
±20V
2116 pF @ 50 V
3.8W (Ta), 132W (Tc)
-
IRF7171MTRPBF
MOSFET N-CH 100V 15A DIRECTFET
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
DIRECTFET™ MN
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
DirectFET™ Isometric MN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
15A (Ta), 93A (Tc)
3.6V @ 150µA
10V
6.5mOhm @ 56A, 10V
54 nC @ 10 V
±20V
2160 pF @ 50 V
2.8W (Ta), 104W (Tc)
-
IRFH7194TRPBF
MOSFET N-CH 100V 11A/35A 8PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
11A (Ta), 35A (Tc)
3.6V @ 50µA
10V
16.4mOhm @ 21A, 10V
19 nC @ 10 V
±20V
733 pF @ 50 V
3.6W (Ta), 39W (Tc)
-
IRFH7188TRPBF
MOSFET N-CH 100V 18A/105A PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
18A (Ta), 105A (Tc)
3.9V @ 150µA
10V
6mOhm @ 50A, 10V
50 nC @ 10 V
±20V
2116 pF @ 50 V
3.8W (Ta), 132W (Tc)
-
IRFH4226TRPBF
MOSFET N-CH 25V 30A/70A 8PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
30A (Ta), 70A (Tc)
2.1V @ 50µA
4.5V, 10V
2.4mOhm @ 30A, 10V
32 nC @ 10 V
±20V
2000 pF @ 13 V
3.4W (Ta), 46W (Tc)
-
IRFHM7194TRPBF
MOSFET N-CH 100V 9.3A/34A 8PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PQFN (3.3x3.3), Power33
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
9.3A (Ta), 34A (Tc)
3.6V @ 50µA
10V
16.4mOhm @ 20A, 10V
19 nC @ 10 V
±20V
733 pF @ 50 V
2.8W (Ta), 37W (Tc)
-
IRFH7182TRPBF
MOSFET N-CH 100V 23A/157A 8PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
100 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
23A (Ta), 157A (Tc)
3.6V @ 250µA
10V
3.9mOhm @ 50A, 10V
74 nC @ 10 V
±20V
3120 pF @ 50 V
4W (Ta), 195W (Tc)
-
IRFH4209DTRPBF
MOSFET N-CH 25V 44A/260A PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
PQFN (5x6)
-55°C ~ 150°C (TJ)
N-Channel
25 V
-
8-PowerTDFN
MOSFET (Metal Oxide)
FASTIRFET™, HEXFET®
-
44A (Ta), 260A (Tc)
2.1V @ 100µA
4.5V, 10V
1.1mOhm @ 50A, 10V
74 nC @ 10 V
±20V
4620 pF @ 13 V
3.5W (Ta), 125W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.