FETKY™ Series, Single FETs, MOSFETs

Results:
82
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Mounting Type
Grade
Qualification
Technology
Results remaining82
Applied Filters:
FETKY™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Qualification
IRF5803D2TRPBF
MOSFET P-CH 40V 3.4A 8SO
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
4,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
40 V
-
MOSFET (Metal Oxide)
FETKY™
3.4A (Ta)
3V @ 250µA
4.5V, 10V
112mOhm @ 3.4A, 10V
37 nC @ 10 V
±20V
1110 pF @ 25 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF7324D1TR
MOSFET P-CH 20V 2.2A 8SO
1+
$2.7887
5+
$2.6338
10+
$2.4789
Quantity
3,544 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
2.2A (Ta)
700mV @ 250µA (Min)
2.7V, 4.5V
270mOhm @ 1.2A, 4.5V
7.8 nC @ 4.5 V
±12V
260 pF @ 15 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF5803D2
MOSFET P-CH 40V 3.4A 8SO
1+
$0.4563
5+
$0.4310
10+
$0.4056
Quantity
1,449 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
40 V
-
MOSFET (Metal Oxide)
FETKY™
3.4A (Ta)
3V @ 250µA
4.5V, 10V
112mOhm @ 3.4A, 10V
37 nC @ 10 V
±20V
1110 pF @ 25 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF7342D2PBF
MOSFET P-CH 55V 3.4A 8SO
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
55 V
-
MOSFET (Metal Oxide)
FETKY™
3.4A (Ta)
1V @ 250µA
4.5V, 10V
105mOhm @ 3.4A, 10V
38 nC @ 10 V
±20V
690 pF @ 25 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF7526D1TRPBF
MOSFET P-CH 30V 2A MICRO8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
P-Channel
30 V
-
MOSFET (Metal Oxide)
FETKY™
2A (Ta)
1V @ 250µA
4.5V, 10V
200mOhm @ 1.2A, 10V
11 nC @ 10 V
±20V
180 pF @ 25 V
Schottky Diode (Isolated)
1.25W (Ta)
-
IRF7523D1
MOSFET N-CH 30V 2.7A MICRO8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
N-Channel
30 V
-
MOSFET (Metal Oxide)
FETKY™
2.7A (Ta)
1V @ 250µA
4.5V, 10V
130mOhm @ 1.7A, 10V
12 nC @ 10 V
±20V
210 pF @ 25 V
Schottky Diode (Isolated)
1.25W (Ta)
-
IRF7322D1
MOSFET P-CH 20V 5.3A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
5.3A (Ta)
700mV @ 250µA (Min)
2.7V, 4.5V
62mOhm @ 2.9A, 4.5V
29 nC @ 4.5 V
±12V
780 pF @ 15 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF7353D2
MOSFET N-CH 30V 6.5A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
N-Channel
30 V
-
MOSFET (Metal Oxide)
FETKY™
6.5A (Ta)
1V @ 250µA
4.5V, 10V
29mOhm @ 5.8A, 10V
33 nC @ 10 V
±20V
650 pF @ 25 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF7534D1TR
MOSFET P-CH 20V 4.3A MICRO8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
4.3A (Ta)
1.2V @ 250µA
2.5V, 4.5V
55mOhm @ 4.3A, 4.5V
15 nC @ 5 V
±12V
1066 pF @ 10 V
Schottky Diode (Isolated)
1.25W (Ta)
-
IRF5803D2TR
MOSFET P-CH 40V 3.4A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
40 V
-
MOSFET (Metal Oxide)
FETKY™
3.4A (Ta)
3V @ 250µA
4.5V, 10V
112mOhm @ 3.4A, 10V
37 nC @ 10 V
±20V
1110 pF @ 25 V
Schottky Diode (Isolated)
2W (Ta)
-
NTTD4401FR2
MOSFET P-CH 20V 2.4A MICRO8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
2.4A (Ta)
1.5V @ 250µA
2.5V, 4.5V
90mOhm @ 3.3A, 4.5V
18 nC @ 4.5 V
±10V
750 pF @ 16 V
Schottky Diode (Isolated)
780mW (Ta)
-
IRF5803D2PBF
MOSFET P-CH 40V 3.4A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
40 V
-
MOSFET (Metal Oxide)
FETKY™
3.4A (Ta)
3V @ 250µA
4.5V, 10V
112mOhm @ 3.4A, 10V
37 nC @ 10 V
±20V
1110 pF @ 25 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF7422D2PBF
MOSFET P-CH 20V 4.3A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
4.3A (Ta)
700mV @ 250µA (Min)
2.7V, 4.5V
90mOhm @ 2.2A, 4.5V
22 nC @ 4.5 V
±12V
610 pF @ 15 V
Schottky Diode (Isolated)
2W (Ta)
-
IRF7421D1PBF
MOSFET N-CH 30V 5.8A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SO
N-Channel
30 V
-
MOSFET (Metal Oxide)
FETKY™
5.8A (Ta)
1V @ 250µA
4.5V, 10V
35mOhm @ 4.1A, 10V
27 nC @ 10 V
±20V
510 pF @ 25 V
Schottky Diode (Isolated)
2W (Ta)
-
NTMSD3P102R2SG
MOSFET P-CH 20V 2.34A 8SOIC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
2.34A (Ta)
2.5V @ 250µA
4.5V, 10V
85mOhm @ 3.05A, 10V
25 nC @ 10 V
±20V
750 pF @ 16 V
Schottky Diode (Isolated)
730mW (Ta)
-
NTMSD6N303R2SG
MOSFET N-CH 30V 6A 8SOIC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
FETKY™
6A (Ta)
2.5V @ 250µA
4.5V, 10V
32mOhm @ 6A, 10V
30 nC @ 10 V
±20V
950 pF @ 24 V
Schottky Diode (Isolated)
2W (Ta)
-
NTLGF3402PT1G
MOSFET P-CH 20V 2.3A 6DFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
6-VDFN Exposed Pad
6-DFN (3x3)
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
2.3A (Ta)
2V @ 250µA
2.5V, 4.5V
140mOhm @ 2.7A, 4.5V
10 nC @ 4.5 V
±12V
350 pF @ 10 V
-
1.14W (Ta)
-
IRF7534D1PBF
MOSFET P-CH 20V 4.3A MICRO8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
4.3A (Ta)
1.2V @ 250µA
2.5V, 4.5V
55mOhm @ 4.3A, 4.5V
15 nC @ 5 V
±12V
1066 pF @ 10 V
Schottky Diode (Isolated)
1.25W (Ta)
-
IRF7524D1PBF
MOSFET P-CH 20V 1.7A MICRO8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Micro8™
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
1.7A (Ta)
700mV @ 250µA (Min)
2.7V, 4.5V
270mOhm @ 1.2A, 4.5V
8.2 nC @ 4.5 V
±12V
240 pF @ 15 V
Schottky Diode (Isolated)
1.25W (Ta)
-
IRF7524D1GTRPBF
MOSFET P-CH 20V 1.7A 8USMD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-uSMD
P-Channel
20 V
-
MOSFET (Metal Oxide)
FETKY™
1.7A (Ta)
700mV @ 250µA (Min)
2.7V, 4.5V
270mOhm @ 1.2A, 4.5V
8.2 nC @ 4.5 V
±12V
240 pF @ 15 V
Schottky Diode (Isolated)
1.25W (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.