G3R™, LoRing™ Series, Single FETs, MOSFETs

Results:
9
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Vgs (Max)
Drain to Source Voltage (Vdss)
Technology
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Supplier Device Package
Qualification
Package / Case
Results remaining9
Applied Filters:
G3R™, LoRing™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureGradeSupplier Device PackageFET FeatureCurrent - Continuous Drain (Id) @ 25°CTechnologyDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdVgs (Max)Power Dissipation (Max)QualificationSeriesInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ Vgs
G3R160MT17J
SIC MOSFET N-CH 22A TO263-7
1+
$17.2269
5+
$16.2699
10+
$15.3128
Quantity
200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
18A (Tc)
SiCFET (Silicon Carbide)
1700 V
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
±15V
187W (Tc)
-
G3R™, LoRing™
854 pF @ 1000 V
29 nC @ 15 V
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
38A (Tc)
SiC (Silicon Carbide Junction Transistor)
1200 V
15V, 18V
85mOhm @ 20A, 18V
2.7V @ 10mA
+22V, -10V
196W (Tc)
-
G3R™, LoRing™
1545 pF @ 800 V
47 nC @ 15 V
G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
8A (Tc)
SiCFET (Silicon Carbide)
1700 V
15V
585mOhm @ 4A, 15V
2.7V @ 2mA
+15V, -5V
71W (Tc)
-
G3R™, LoRing™
454 pF @ 1000 V
18 nC @ 15 V
G3R60MT07J-TR
650V 60M TO-263-7 G3R SIC MOSFET
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
44A (Tc)
SiC (Silicon Carbide Junction Transistor)
750 V
15V
-
-
-
182W (Tc)
-
G3R™, LoRing™
-
-
G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
18A (Tc)
SiCFET (Silicon Carbide)
1700 V
15V
208mOhm @ 12A, 15V
2.7V @ 5mA
+15V, -5V
145W (Tc)
-
G3R™, LoRing™
854 pF @ 1000 V
29 nC @ 15 V
G3R30MT12J-TR
1200V 30M TO-263-7 G3R SIC MOSFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
85A (Tc)
SiC (Silicon Carbide Junction Transistor)
1200 V
15V, 18V
34mOhm @ 45A, 18V
2.7V @ 24mA
+22V, -10V
408W (Tc)
-
G3R™, LoRing™
3863 pF @ 800 V
118 nC @ 15 V
G3R350MT12J-TR
1200V 350M TO-263-7 G3R SIC MOSF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
10A (Tc)
SiC (Silicon Carbide Junction Transistor)
1200 V
15V, 18V
395mOhm @ 4A, 18V
2.7V @ 2mA
+22V, -10V
64W (Tc)
-
G3R™, LoRing™
331 pF @ 800 V
10 nC @ 15 V
G3R40MT12J-TR
1200V 40M TO-263-7 G3R SIC MOSFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
66A (Tc)
SiC (Silicon Carbide Junction Transistor)
1200 V
15V, 18V
45mOhm @ 35A, 18V
2.7V @ 18mA
+22V, -10V
330W (Tc)
-
G3R™, LoRing™
2897 pF @ 800 V
88 nC @ 15 V
G3R160MT12J-TR
1200V 160M TO-263-7 G3R SIC MOSF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-7
-
19A (Tc)
SiC (Silicon Carbide Junction Transistor)
1200 V
15V, 18V
180mOhm @ 10A, 18V
2.7V @ 5mA
+22V, -10V
110W (Tc)
-
G3R™, LoRing™
724 pF @ 800 V
23 nC @ 15 V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.