QFET™ Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Drain to Source Voltage (Vdss)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Vgs (Max)
Operating Temperature
FET Type
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Technology
Results remaining6
Applied Filters:
QFET™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FQI17P10TU
P-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
P-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-55°C ~ 175°C (TJ)
-
TO-262 (I2PAK)
MOSFET (Metal Oxide)
-
4V @ 250µA
QFET™
100 V
16.5A (Tc)
10V
190mOhm @ 8.25A, 10V
39 nC @ 10 V
±30V
1100 pF @ 25 V
3.75W (Ta), 100W (Tc)
-
FQD60N03LTM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 150°C (TJ)
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
3V @ 250µA
QFET™
30 V
30A (Tc)
5V, 10V
23mOhm @ 30A, 10V
46 nC @ 10 V
±16V
900 pF @ 15 V
45W (Tc)
-
FQB12N60TM
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 150°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
5V @ 250µA
QFET™
600 V
10.5A (Tc)
10V
700mOhm @ 5.3A, 10V
54 nC @ 10 V
±30V
1900 pF @ 25 V
3.13W (Ta), 180W (Tc)
-
FQB46N15TM
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
QFET™
150 V
45.6A (Tc)
10V
42mOhm @ 22.8A, 10V
110 nC @ 10 V
±25V
3250 pF @ 25 V
3.75W (Ta), 210W (Tc)
-
COM-10213
N-CHANNEL MOSFET 60V 30A
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220
MOSFET (Metal Oxide)
-
2.5V @ 250µA
QFET™
60 V
32A (Tc)
5V, 10V
35mOhm @ 16A, 10V
20 nC @ 5 V
±20V
1040 pF @ 25 V
79W (Tc)
-
COM-10349
P-CHANNEL MOSFET 60V 27A
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
P-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220
MOSFET (Metal Oxide)
-
4V @ 250µA
QFET™
60 V
27A (Tc)
10V
70mOhm @ 13.5A, 10V
43 nC @ 10 V
±25V
1400 pF @ 25 V
120W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.