HiPerFET™, Polar™ Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Mounting Type
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining4
Applied Filters:
HiPerFET™, Polar™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCH104N60F
MOSFET N-CH 600V 37A TO247-3
1+
$3.3845
5+
$3.1965
10+
$3.0085
Quantity
30,760 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
5V @ 250µA
HiPerFET™, Polar™
600 V
37A (Tc)
10V
104mOhm @ 18.5A, 10V
139 nC @ 10 V
±20V
5950 pF @ 100 V
357W (Tc)
-
FCP104N60F
MOSFET N-CH 600V 37A TO220-3
1+
$7.0986
5+
$6.7042
10+
$6.3099
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
5V @ 250µA
HiPerFET™, Polar™
600 V
37A (Tc)
10V
104mOhm @ 18.5A, 10V
145 nC @ 10 V
±20V
6130 pF @ 25 V
357W (Tc)
-
FCP150N65F
MOSFET N-CH 650V 24A TO220-3
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
1,004 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
5V @ 2.4mA
HiPerFET™, Polar™
650 V
24A (Tc)
10V
150mOhm @ 12A, 10V
93 nC @ 10 V
±20V
3737 pF @ 100 V
298W (Tc)
-
FCD620N60ZF
MOSFET N-CH 600V 7.3A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
5V @ 250µA
HiPerFET™, Polar™
600 V
7.3A (Tc)
10V
620mOhm @ 3.6A, 10V
36 nC @ 10 V
±20V
1135 pF @ 25 V
89W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.