STripFET™ F3 Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Grade
Vgs(th) (Max) @ Id
Qualification
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Mounting Type
Technology
Vgs (Max)
Results remaining6
Applied Filters:
STripFET™ F3
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualificationGrade
STH245N75F3-6
MOSFET N-CH 75V 180A H2PAK-6
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
56 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
180A (Tc)
4V @ 250µA
STripFET™ F3
75 V
10V
3mOhm @ 90A, 10V
87 nC @ 10 V
±20V
6800 pF @ 25 V
300W (Tc)
H2PAK-6
AEC-Q101
Automotive
STH52N10LF3-2AG
MOSFET N-CH 100V 52A H2PAK-2
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
52A (Tc)
2.5V @ 250µA
STripFET™ F3
100 V
5V, 10V
20mOhm @ 26A, 10V
18.5 nC @ 5 V
±20V
1900 pF @ 400 V
110W (Tc)
H2Pak-2
-
-
STL8N6LF3
MOSFET N-CH 60V 20A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
20A (Tc)
2.5V @ 250µA
STripFET™ F3
60 V
5V, 10V
30mOhm @ 4A, 10V
13 nC @ 10 V
±20V
668 pF @ 25 V
65W (Tc)
PowerFlat™ (5x6)
AEC-Q101
Automotive
STH185N10F3-2
MOSFET N-CH 100V 180A H2PAK-2
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
180A (Tc)
4V @ 250µA
STripFET™ F3
100 V
10V
4.5mOhm @ 60A, 10V
114.6 nC @ 10 V
±20V
6665 pF @ 25 V
315W (Tc)
H2Pak-2
AEC-Q101
Automotive
STH185N10F3-6
MOSFET N-CH 100V 180A H2PAK-6
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
180A (Tc)
4V @ 250µA
STripFET™ F3
100 V
10V
4.5mOhm @ 60A, 10V
114.6 nC @ 10 V
±20V
6665 pF @ 25 V
315W (Tc)
H2PAK-6
AEC-Q101
Automotive
STL7N6LF3
MOSFET N-CH 60V 20A POWERFLAT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
20A (Tc)
2.5V @ 250µA
STripFET™ F3
60 V
5V, 10V
43mOhm @ 3A, 10V
8.7 nC @ 10 V
±20V
432 pF @ 25 V
4.3W (Ta), 52W (Tc)
PowerFlat™ (5x6)
AEC-Q101
Automotive

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.