U-MOSX-H Series, Single FETs, MOSFETs

Results:
14
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Results remaining14
Applied Filters:
U-MOSX-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseGradeOperating TemperatureSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TPH2R408QM,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
-
175°C
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
120A (Tc)
U-MOSX-H
80 V
6V, 10V
2.43mOhm @ 50A, 10V
3.5V @ 1mA
87 nC @ 10 V
±20V
8300 pF @ 40 V
3W (Ta), 210W (Tc)
-
XK1R9F10QB,LXGQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
175°C
TO-220SM(W)
MOSFET (Metal Oxide)
-
160A (Ta)
U-MOSX-H
100 V
6V, 10V
1.92mOhm @ 80A, 10V
3.5V @ 1mA
184 nC @ 10 V
±20V
11500 pF @ 10 V
375W (Tc)
-
TK6R8A08QM,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
-
175°C
TO-220SIS
MOSFET (Metal Oxide)
-
58A (Tc)
U-MOSX-H
80 V
6V, 10V
6.8mOhm @ 29A, 10V
3.5V @ 500µA
39 nC @ 10 V
±20V
2700 pF @ 40 V
41W (Tc)
-
TK5R1A08QM,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
-
175°C
TO-220SIS
MOSFET (Metal Oxide)
-
70A (Tc)
U-MOSX-H
80 V
6V, 10V
5.1mOhm @ 35A, 10V
3.5V @ 700µA
54 nC @ 10 V
±20V
3980 pF @ 40 V
45W (Tc)
-
TK3R2A08QM,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
-
175°C
TO-220SIS
MOSFET (Metal Oxide)
-
92A (Tc)
U-MOSX-H
80 V
6V, 10V
3.2mOhm @ 46A, 10V
3.5V @ 1.3mA
102 nC @ 10 V
±20V
7670 pF @ 40 V
45W (Tc)
-
TPH9R00CQ5,LQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
-
175°C
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
64A (Tc)
U-MOSX-H
150 V
8V, 10V
9mOhm @ 32A, 10V
4.5V @ 1mA
44 nC @ 10 V
±20V
5400 pF @ 75 V
210W (Tc)
-
TK5R1P08QM,RQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
175°C
DPAK
MOSFET (Metal Oxide)
-
84A (Tc)
U-MOSX-H
80 V
6V, 10V
5.1mOhm @ 42A, 10V
3.5V @ 700µA
56 nC @ 10 V
±20V
3980 pF @ 40 V
104W (Tc)
-
TK6R9P08QM,RQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
175°C
DPAK
MOSFET (Metal Oxide)
-
62A (Tc)
U-MOSX-H
80 V
6V, 10V
6.9mOhm @ 31A, 10V
3.5V @ 500µA
39 nC @ 10 V
±20V
2700 pF @ 40 V
89W (Tc)
-
TK2R4E08QM,S1X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-
175°C
TO-220
MOSFET (Metal Oxide)
-
120A (Tc)
U-MOSX-H
80 V
6V, 10V
2.44mOhm @ 50A, 10V
3.5V @ 2.2mA
178 nC @ 10 V
±20V
13000 pF @ 40 V
300W (Tc)
-
TPN19008QM,LQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
-
175°C
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
-
34A (Tc)
U-MOSX-H
80 V
6V, 10V
19mOhm @ 17A, 10V
3.5V @ 200µA
16 nC @ 10 V
±20V
1400 pF @ 40 V
630mW (Ta), 57W (Tc)
-
TK7R0E08QM,S1X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-
175°C
TO-220
MOSFET (Metal Oxide)
-
64A (Tc)
U-MOSX-H
80 V
6V, 10V
7mOhm @ 32A, 10V
3.5V @ 500µA
39 nC @ 10 V
±20V
2700 pF @ 40 V
87W (Tc)
-
TK5R3E08QM,S1X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-
175°C
TO-220
MOSFET (Metal Oxide)
-
120A (Tc)
U-MOSX-H
80 V
6V, 10V
5.3mOhm @ 50A, 10V
3.5V @ 700µA
55 nC @ 10 V
±20V
3980 pF @ 40 V
150W (Tc)
-
TK3R3E08QM,S1X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-
175°C
TO-220
MOSFET (Metal Oxide)
-
120A (Tc)
U-MOSX-H
80 V
6V, 10V
3.3mOhm @ 50A, 10V
3.5V @ 1.3mA
110 nC @ 10 V
±20V
7670 pF @ 40 V
230W (Tc)
-
TK2R4A08QM,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
-
175°C
TO-220SIS
MOSFET (Metal Oxide)
-
100A (Tc)
U-MOSX-H
80 V
6V, 10V
2.44mOhm @ 50A, 10V
3.5V @ 2.2mA
179 nC @ 10 V
±20V
13000 pF @ 40 V
47W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.