SkyFET®, TrenchFET® Series, Single FETs, MOSFETs

Results:
20
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Operating Temperature
FET Feature
FET Type
Mounting Type
Drain to Source Voltage (Vdss)
Technology
Grade
Qualification
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining20
Applied Filters:
SkyFET®, TrenchFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SI4628DY-T1-GE3
MOSFET N-CH 30V 38A 8SO
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
240 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
38A (Tc)
3mOhm @ 20A, 10V
2.5V @ 1mA
4.5V, 10V
87 nC @ 10 V
±20V
3450 pF @ 15 V
3.5W (Ta), 7.8W (Tc)
-
SIE726DF-T1-GE3
MOSFET N-CH 30V 60A 10POLARPAK
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
10-PolarPAK® (L)
10-PolarPAK® (L)
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
60A (Tc)
2.4mOhm @ 25A, 10V
3V @ 250µA
4.5V, 10V
160 nC @ 10 V
±20V
7400 pF @ 15 V
5.2W (Ta), 125W (Tc)
-
SI4776DY-T1-GE3
MOSFET N-CHANNEL 30V 11.9A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TA)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
11.9A (Tc)
16mOhm @ 10A, 10V
2.3V @ 1mA
4.5V, 10V
17.5 nC @ 10 V
±20V
521 pF @ 15 V
4.1W (Tc)
-
SIR788DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
Schottky Diode (Body)
60A (Tc)
3.4mOhm @ 20A, 10V
2.5V @ 250µA
4.5V, 10V
75 nC @ 10 V
±20V
2873 pF @ 15 V
5W (Ta), 48W (Tc)
-
SIE726DF-T1-E3
MOSFET N-CH 30V 60A 10POLARPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
10-PolarPAK® (L)
10-PolarPAK® (L)
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
60A (Tc)
2.4mOhm @ 25A, 10V
3V @ 250µA
4.5V, 10V
160 nC @ 10 V
±20V
7400 pF @ 15 V
5.2W (Ta), 125W (Tc)
-
SI4646DY-T1-GE3
MOSFET N-CH 30V 12A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
12A (Tc)
11.5mOhm @ 10A, 10V
2.5V @ 1mA
4.5V, 10V
45 nC @ 10 V
±20V
1790 pF @ 15 V
3W (Ta), 6.25W (Tc)
-
SI4646DY-T1-E3
MOSFET N-CH 30V 12A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
12A (Tc)
11.5mOhm @ 10A, 10V
2.5V @ 1mA
4.5V, 10V
45 nC @ 10 V
±20V
1790 pF @ 15 V
3W (Ta), 6.25W (Tc)
-
SI4638DY-T1-E3
MOSFET N-CH 30V 22.4A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
22.4A (Tc)
6.5mOhm @ 15A, 10V
2.7V @ 1mA
4.5V, 10V
100 nC @ 10 V
±20V
4190 pF @ 15 V
3W (Ta), 5.9W (Tc)
-
SI7774DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
60A (Tc)
3.8mOhm @ 15A, 10V
2.2V @ 250µA
4.5V, 10V
66 nC @ 10 V
±20V
2630 pF @ 15 V
5W (Ta), 48W (Tc)
-
SI7748DP-T1-GE3
MOSFET N-CH 30V 50A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
50A (Tc)
4.8mOhm @ 15A, 10V
2.7V @ 1mA
4.5V, 10V
92 nC @ 10 V
±20V
3770 pF @ 15 V
4.8W (Ta), 56W (Tc)
-
SI7758DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
60A (Tc)
2.9mOhm @ 20A, 10V
2.7V @ 250µA
4.5V, 10V
160 nC @ 10 V
±20V
7150 pF @ 15 V
6.25W (Ta), 104W (Tc)
-
SI7720DN-T1-GE3
MOSFET N-CH 30V 12A PPAK1212-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
PowerPAK® 1212-8
PowerPAK® 1212-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
12A (Tc)
12.5mOhm @ 10A, 10V
2.5V @ 250µA
4.5V, 10V
45 nC @ 10 V
±20V
1790 pF @ 15 V
3.8W (Ta), 52W (Tc)
-
SI7742DP-T1-GE3
MOSFET N-CH 30V 60A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
60A (Tc)
3.5mOhm @ 20A, 10V
2.7V @ 250µA
4.5V, 10V
115 nC @ 10 V
±20V
5300 pF @ 15 V
5.4W (Ta), 83W (Tc)
-
SI4774DY-T1-GE3
MOSFET N-CHANNEL 30V 16A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TA)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
Schottky Diode (Body)
16A (Tc)
9.5mOhm @ 10A, 10V
2.3V @ 1mA
4.5V, 10V
14.3 nC @ 4.5 V
±20V
1025 pF @ 15 V
5W (Tc)
-
SI7726DN-T1-GE3
MOSFET N-CH 30V 35A PPAK1212-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
PowerPAK® 1212-8
PowerPAK® 1212-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
35A (Tc)
9.5mOhm @ 10A, 10V
2.6V @ 250µA
4.5V, 10V
43 nC @ 10 V
±20V
1765 pF @ 15 V
3.8W (Ta), 52W (Tc)
-
SI7772DP-T1-GE3
MOSFET N-CH 30V 35.6A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
PowerPAK® SO-8
PowerPAK® SO-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
35.6A (Tc)
13mOhm @ 15A, 10V
2.5V @ 250µA
4.5V, 10V
28 nC @ 10 V
±20V
1084 pF @ 15 V
3.9W (Ta), 29.8W (Tc)
-
SIS776DN-T1-GE3
MOSFET N-CH 30V 35A PPAK1212-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-50°C ~ 150°C (TJ)
PowerPAK® 1212-8
PowerPAK® 1212-8
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
Schottky Diode (Body)
35A (Tc)
6.2mOhm @ 10A, 10V
2.5V @ 250µA
4.5V, 10V
36 nC @ 10 V
±20V
1360 pF @ 15 V
3.8W (Ta), 52W (Tc)
-
SI4752DY-T1-GE3
MOSFET N-CH 30V 25A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
Schottky Diode (Body)
25A (Tc)
5.5mOhm @ 10A, 10V
2.2V @ 1mA
4.5V, 10V
43 nC @ 10 V
±20V
1700 pF @ 15 V
3W (Ta), 6.25W (Tc)
-
SI4712DY-T1-GE3
MOSFET N-CH 30V 14.6A 8SO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
N-Channel
30 V
-
MOSFET (Metal Oxide)
SkyFET®, TrenchFET®
-
14.6A (Tc)
13mOhm @ 15A, 10V
2.5V @ 1mA
4.5V, 10V
28 nC @ 10 V
±20V
1084 pF @ 15 V
2.5W (Ta), 5W (Tc)
-
SIR774DP-T1-GE3
MOSFET N-CH 30V
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
SkyFET®, TrenchFET®
-
32A (Ta), 40A (Tc)
-
-
4.5V, 10V
-
±20V
-
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.