CoolMOS™ CE Series, Single FETs, MOSFETs

Results:
106
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining106
Applied Filters:
CoolMOS™ CE
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseTechnologySupplier Device PackageFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
IPS70R600CEAKMA2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET (Metal Oxide)
PG-TO251-3
-
CoolMOS™ CE
700 V
10.5A (Tj)
10V
600mOhm @ 1A, 10V
3.5V @ 210µA
22 nC @ 10 V
±20V
474 pF @ 100 V
86W (Tc)
IPS60R460CEAKMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET (Metal Oxide)
PG-TO251-3
-
CoolMOS™ CE
600 V
13.1A (Tj)
10V
460mOhm @ 3.4A, 10V
3.5V @ 280µA
28 nC @ 10 V
±20V
620 pF @ 100 V
102W (Tc)
IPD70R1K4CEAUMA1
MOSFET N-CH 700V 5.4A TO252-3
1+
$17.2394
5+
$16.2817
10+
$15.3239
Quantity
115,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
700 V
5.4A (Tc)
10V
1.4Ohm @ 1A, 10V
3.5V @ 130µA
10.5 nC @ 10 V
±20V
225 pF @ 100 V
53W (Tc)
IPN50R650CEATMA1
MOSFET N-CH 500V 9A SOT223
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
85,790 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
PG-SOT223-3
-
CoolMOS™ CE
500 V
9A (Tc)
13V
650mOhm @ 1.8A, 13V
3.5V @ 150µA
15 nC @ 10 V
±20V
342 pF @ 100 V
5W (Tc)
IPD60R1K5CEAUMA1
MOSFET N-CH 600V 5A TO252
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
37,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
600 V
5A (Tc)
10V
1.5Ohm @ 1.1A, 10V
3.5V @ 90µA
9.4 nC @ 10 V
±20V
200 pF @ 100 V
49W (Tc)
IPD50R1K4CEBTMA1
MOSFET N-CH 500V 3.1A TO252-3
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
12,817 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
500 V
3.1A (Tc)
13V
1.4Ohm @ 900mA, 13V
3.5V @ 70µA
1 nC @ 10 V
±20V
178 pF @ 100 V
25W (Tc)
IPD60R400CEAUMA1
MOSFET N-CH 600V 14.7A TO252
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-2
-
CoolMOS™ CE
600 V
14.7A (Tc)
10V
400mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
112W (Tc)
IPD60R2K1CEAUMA1
MOSFET N-CH 600V 2.3A TO252-3
1+
$1.6479
5+
$1.5563
10+
$1.4648
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
600 V
2.3A (Tc)
10V
2.1Ohm @ 760mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
38W (Tc)
IPD50R280CEAUMA1
MOSFET N-CH 500V 13A TO252
1+
$2.2310
5+
$2.1070
10+
$1.9831
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
500 V
13A (Ta)
13V
280mOhm @ 4.2A, 13V
3.5V @ 350µA
32.6 nC @ 10 V
±20V
773 pF @ 100 V
119W (Tc)
IPN50R2K0CEATMA1
MOSFET N-CH 500V 3.6A SOT223
1+
$0.3549
5+
$0.3352
10+
$0.3155
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
PG-SOT223-3
-
CoolMOS™ CE
500 V
3.6A (Tc)
13V
2Ohm @ 600mA, 13V
3.5V @ 50µA
6 nC @ 10 V
±20V
124 pF @ 100 V
5W (Tc)
IPN60R2K1CEATMA1
MOSFET N-CH 600V 3.7A SOT223
1+
$0.5577
5+
$0.5268
10+
$0.4958
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
PG-SOT223-3
-
CoolMOS™ CE
600 V
3.7A (Tc)
10V
2.1Ohm @ 800mA, 10V
3.5V @ 60µA
6.7 nC @ 10 V
±20V
140 pF @ 100 V
5W (Tc)
IPD50R950CEAUMA1
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3-344
-
CoolMOS™ CE
500 V
4.3A (Tc)
13V
950mOhm @ 1.2A, 13V
3.5V @ 100µA
10.5 nC @ 10 V
±20V
231 pF @ 100 V
53W (Tc)
IPD50R2K0CEAUMA1
MOSFET N-CH 500V 2.4A TO252-3
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
500 V
2.4A (Tc)
13V
2Ohm @ 600mA, 13V
3.5V @ 50µA
6 nC @ 10 V
±20V
124 pF @ 100 V
33W (Tc)
IPD60R1K0CEAUMA1
MOSFET N-CH 600V 6.8A 61W TO252
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3-344
-
CoolMOS™ CE
600 V
6.8A (Tc)
10V
1Ohm @ 1.5A, 10V
3.5V @ 130µA
13 nC @ 10 V
±20V
280 pF @ 100 V
61W (Tc)
IPD65R650CEAUMA1
MOSFET N-CH 650V 7A TO252-3
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
650 V
7A (Tc)
10V
650mOhm @ 2.1A, 10V
3.5V @ 210µA
23 nC @ 10 V
±20V
440 pF @ 100 V
86W (Tc)
IPD80R2K8CEATMA1
MOSFET N-CH 800V 1.9A TO252-3
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
800 V
1.9A (Tc)
10V
2.8Ohm @ 1.1A, 10V
3.9V @ 120µA
12 nC @ 10 V
±20V
290 pF @ 100 V
42W (Tc)
IPD80R1K0CEATMA1
MOSFET N-CH 800V 5.7A TO252-3
1+
$2.2817
5+
$2.1549
10+
$2.0282
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
800 V
5.7A (Tc)
10V
950mOhm @ 3.6A, 10V
3.9V @ 250µA
31 nC @ 10 V
±20V
785 pF @ 100 V
83W (Tc)
IPD60R3K4CEAUMA1
MOSFET N-CH 600V 2.6A TO252-3
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
2,205 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
PG-TO252-3
-
CoolMOS™ CE
600 V
2.6A (Tc)
10V
3.4Ohm @ 500mA, 10V
3.5V @ 40µA
4.6 nC @ 10 V
±20V
93 pF @ 100 V
29W (Tc)
IPN50R950CEATMA1
MOSFET N-CH 500V 6.6A SOT223
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
2,082 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
PG-SOT223
-
CoolMOS™ CE
500 V
6.6A (Tc)
13V
950mOhm @ 1.2A, 13V
3.5V @ 100µA
10.5 nC @ 10 V
±20V
231 pF @ 100 V
5W (Tc)
IPA50R280CEXKSA2
MOSFET N-CH 500V 7.5A TO220
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
1,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
MOSFET (Metal Oxide)
PG-TO220-3-FP
-
CoolMOS™ CE
500 V
7.5A (Tc)
13V
280mOhm @ 4.2A, 13V
3.5V @ 350µA
32.6 nC @ 10 V
±20V
773 pF @ 100 V
30.4W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.