π-MOSVIII Series, Single FETs, MOSFETs

Results:
7
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Operating Temperature
Supplier Device Package
Package / Case
Vgs (Max)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining7
Applied Filters:
π-MOSVIII
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationSeries
TK40J20D,S1F(O
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
150°C
-
TO-3P(N)
MOSFET (Metal Oxide)
-
40A (Ta)
200 V
10V
44mOhm @ 20A, 10V
3.5V @ 1mA
100 nC @ 10 V
±20V
4300 pF @ 100 V
260W (Tc)
-
π-MOSVIII
TK10J80E,S1E
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
150°C (TJ)
-
TO-3P(N)
MOSFET (Metal Oxide)
-
10A (Ta)
800 V
10V
1Ohm @ 5A, 10V
4V @ 1mA
46 nC @ 10 V
±30V
2000 pF @ 25 V
250W (Tc)
-
π-MOSVIII
TK10A80E,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
150°C (TJ)
-
TO-220SIS
MOSFET (Metal Oxide)
-
10A (Ta)
800 V
10V
1Ohm @ 5A, 10V
4V @ 1mA
46 nC @ 10 V
±30V
2000 pF @ 25 V
50W (Tc)
-
π-MOSVIII
TK7A90E,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
150°C (TJ)
-
TO-220SIS
MOSFET (Metal Oxide)
-
7A (Ta)
900 V
10V
2Ohm @ 3.5A, 10V
4V @ 700µA
32 nC @ 10 V
±30V
1350 pF @ 25 V
45W (Tc)
-
π-MOSVIII
TK9A90E,S4X
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
150°C (TJ)
-
TO-220SIS
MOSFET (Metal Oxide)
-
9A (Ta)
900 V
10V
1.3Ohm @ 4.5A, 10V
4V @ 900µA
46 nC @ 10 V
±30V
2000 pF @ 25 V
50W (Tc)
-
π-MOSVIII
TK7J90E,S1E
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
150°C (TJ)
-
TO-3P(N)
MOSFET (Metal Oxide)
-
7A (Ta)
900 V
10V
2Ohm @ 3.5A, 10V
4V @ 700µA
32 nC @ 10 V
±30V
1350 pF @ 25 V
200W (Tc)
-
π-MOSVIII
TK6A80E,S4X
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
150°C (TJ)
-
TO-220SIS
MOSFET (Metal Oxide)
-
6A (Ta)
800 V
10V
1.7Ohm @ 3A, 10V
4V @ 600µA
32 nC @ 10 V
±30V
1350 pF @ 25 V
45W (Tc)
-
π-MOSVIII

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.