DirectFET® Series, Single FETs, MOSFETs

Results:
3
Manufacturer
Series
Operating Temperature
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining3
Applied Filters:
DirectFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
IRF60DM206ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
-
MOSFET (Metal Oxide)
-
DirectFET®
130A (Tc)
6V, 10V
2.9mOhm @ 80A, 10V
3.7V @ 150µA
200 nC @ 10 V
±20V
6530 pF @ 25 V
96W (Tc)
DirectFET™ Isometric ME
DirectFET™ Isometric ME
-
IRF6811STRPBF
MOSFET N-CH 25V 19A/74A DIRECTFT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
-
MOSFET (Metal Oxide)
-
DirectFET®
19A (Ta), 74A (Tc)
-
3.7mOhm @ 19A, 10V
2.1V @ 35µA
17 nC @ 4.5 V
±16V
1590 pF @ 13 V
2.1W (Ta), 32W (Tc)
DirectFET™ Isometric SQ
DirectFET™ Isometric SQ
-
IRF6811STRPBF-INF
DIRECTFET PLUS POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
-
MOSFET (Metal Oxide)
-
DirectFET®
19A (Ta), 74A (Tc)
-
3.7mOhm @ 19A, 10V
2.1V @ 35µA
17 nC @ 4.5 V
±16V
1590 pF @ 13 V
2.1W (Ta), 32W (Tc)
DirectFET™ Isometric SQ
DirectFET™ Isometric SQ
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.