OptiMOS™ 6 Series, Single FETs, MOSFETs

Results:
35
Manufacturer
Series
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Grade
Qualification
Operating Temperature
FET Feature
FET Type
Mounting Type
Technology
Vgs (Max)
Results remaining35
Applied Filters:
OptiMOS™ 6
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeDrain to Source Voltage (Vdss)Operating TemperatureTechnologyFET FeatureSeriesDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGradeSupplier Device PackageRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°C
IAUCN04S6N017TATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
7V, 10V
49 nC @ 10 V
±20V
3250 pF @ 25 V
103W (Tc)
AEC-Q101
Automotive
PG-LHDSO-10-1
1.73mOhm @ 60A, 10V
3V @ 40µA
58A (Ta), 120A (Tj)
BSZ018N04LS6ATMA1
MOSFET N-CH 40V 27A/40A TSDSON
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
33,436 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
4.5V, 10V
31 nC @ 10 V
±20V
2700 pF @ 20 V
2.5W (Ta), 83W (Tc)
-
-
PG-TSDSON-8-FL
1.8mOhm @ 20A, 10V
2.3V @ 250µA
27A (Ta), 40A (Tc)
ISZ080N10NM6ATMA1
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
25,162 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
8V, 10V
24 nC @ 10 V
±20V
1800 pF @ 50 V
3W (Ta), 100W (Tc)
-
-
PG-TSDSON-8 FL
8.04mOhm @ 20A, 10V
3.3V @ 36µA
13A (Ta), 75A (Tc)
ISC027N10NM6ATMA1
1+
$21.5493
5+
$20.3521
10+
$19.1549
Quantity
12,976 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
8V, 10V
72.5 nC @ 10 V
±20V
5500 pF @ 50 V
3W (Ta), 217W (Tc)
-
-
PG-TDSON-8 FL
2.7mOhm @ 50A, 10V
3.3V @ 116µA
23A (Ta), 192A (Tc)
ISC007N04NM6ATMA1
1+
$4.1831
5+
$3.9507
10+
$3.7183
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
6V, 10V
117 nC @ 10 V
±20V
8400 pF @ 20 V
3W (Ta), 188W (Tc)
-
-
PG-TDSON-8 FL
0.7mOhm @ 50A, 10V
2.8V @ 1.05mA
48A (Ta), 381A (Tc)
BSZ063N04LS6ATMA1
MOSFET N-CH 40V 15A/40A TSDSON
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
6,627 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
4.5V, 10V
9.5 nC @ 10 V
±20V
650 pF @ 20 V
2.5W (Ta), 38W (Tc)
-
-
PG-TSDSON-8-FL
6.3mOhm @ 20A, 10V
2.3V @ 250µA
15A (Ta), 40A (Tc)
ISC060N10NM6ATMA1
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
4,086 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
8V, 10V
33 nC @ 10 V
±20V
2500 pF @ 50 V
3W (Ta), 125W (Tc)
-
-
PG-TDSON-8 FL
6mOhm @ 25A, 10V
3.3V @ 50µA
15A (Ta), 97A (Tc)
ISC022N10NM6ATMA1
1+
$4.8169
5+
$4.5493
10+
$4.2817
Quantity
2,999 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
8V, 10V
91 nC @ 10 V
±20V
6880 pF @ 50 V
3W (Ta), 254W (Tc)
-
-
PG-TSON-8-3
2.24mOhm @ 50A, 10V
3.3V @ 147µA
25A (Ta), 230A (Tc)
ISC010N04NM6ATMA1
1+
$2.4085
5+
$2.2746
10+
$2.1408
Quantity
901 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
6V, 10V
83 nC @ 10 V
±20V
6000 pF @ 20 V
3W (Ta), 150W (Tc)
-
-
PG-TDSON-8 FL
1mOhm @ 50A, 10V
2.8V @ 747µA
40A (Ta), 285A (Tc)
IQD005N04NM6ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
6V, 10V
163 nC @ 10 V
±20V
12000 pF @ 20 V
3W (Ta), 333W (Tc)
-
-
PG-TSON-8-U04
0.47mOhm @ 50A, 10V
2.8V @ 1.449mA
58A (Ta), 610A (Tc)
IQDH45N04LM6ATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
4.5V, 10V
172 nC @ 10 V
±20V
12000 pF @ 20 V
3W (Ta), 333W (Tc)
-
-
PG-TSON-8-U04
0.45mOhm @ 50A, 10V
2.3V @ 1.449mA
60A (Ta), 637A (Tc)
ISZ106N12LM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
120 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
3.3V, 10V
26 nC @ 10 V
±20V
1800 pF @ 60 V
2.5W (Ta), 94W (Tc)
-
-
PG-TSDSON-8 FL
10.6mOhm @ 28A, 10V
2.2V @ 35µA
10A (Ta), 62A (Tc)
ISC073N12LM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
120 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
3.3V, 10V
36 nC @ 10 V
±20V
2600 pF @ 60 V
3W (Ta), 125W (Tc)
-
-
PG-TDSON-8
7.3mOhm @ 40A, 10V
2.2V @ 50µA
13.4A (Ta), 86A (Tc)
IQE013N04LM6SCATMA1
OPTIMOS LOWVOLTAGE POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerWDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
4.5V, 10V
41 nC @ 10 V
±20V
3800 pF @ 20 V
2.5W (Ta), 107W (Tc)
-
-
PG-WHSON-8-1
1.35mOhm @ 20A, 10V
2V @ 51µA
31A (Ta), 205A (Tc)
ISC037N12NM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
120 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
8V, 10V
58 nC @ 10 V
±20V
4300 pF @ 60 V
3W (Ta), 214W (Tc)
-
-
PG-TDSON-8 FL
3.7mOhm @ 50A, 10V
3.6V @ 111µA
19.2A (Ta), 163A (Tc)
IPTC017N12NM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
16-PowerSOP Module
N-Channel
120 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
8V, 10V
141 nC @ 10 V
±20V
11000 pF @ 60 V
3.8W (Ta), 395W (Tc)
-
-
PG-HDSOP-16-U01
1.7mOhm @ 150A, 10V
3.6V @ 275µA
32A (Ta), 331A (Tc)
IAUA250N04S6N005AUMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
5-PowerSFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
7V, 10V
170 nC @ 10 V
±20V
11144 pF @ 25 V
250W (Tc)
-
-
PG-HSOF-5-5
0.55mOhm @ 100A, 10V
3V @ 145µA
62A (Ta)
BSZ021N04LS6ATMA1
MOSFET N-CH 40V 25A/40A TSDSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
4.5V, 10V
31 nC @ 10 V
±20V
2700 pF @ 20 V
2.5W (Ta), 83W (Tc)
-
-
PG-TSDSON-8-FL
2.1mOhm @ 20A, 10V
2.3V @ 250µA
25A (Ta), 40A (Tc)
BSC007N04LS6SCATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
4.5V, 10V
118 nC @ 10 V
±20V
8400 pF @ 20 V
3W (Ta), 188W (Tc)
-
-
PG-TDSON-8 FL
0.7mOhm @ 50A, 10V
2.3V @ 250µA
48A (Ta), 381A (Tc)
ISC104N12LM6ATMA1
OPTIMOS 6 POWER-TRANSISTOR,120V
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
120 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
OptiMOS™ 6
3.3V, 10V
26 nC @ 10 V
±20V
1800 pF @ 60 V
3W (Ta), 94W (Tc)
-
-
PG-TDSON-8
10.4mOhm @ 28A, 10V
2.2V @ 35µA
11A (Ta), 63A (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.