Phototransistors

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LTR-4206E
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50 mA
100 nA
860nm
100 mW
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AEC-Q101
Automotive
LTR-301
SENSOR PHOTO 940NM SIDE VIEW RAD
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$0.0578
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Through Hole
70°
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30 V
2.4 mA
100 nA
940nm
100 mW
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Radial
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TEMT1000
SENSOR PHOTO 950NM TOP VIEW 2SMD
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$0.2742
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$0.2546
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70 V
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200 nA
950nm
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2-SMD, Z-Bend
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ALS-PT19-315C/L177/TR8
SENSOR PHOTO 630NM 2SMD
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Surface Mount
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5.5 V
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100 nA
630nm
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2-SMD, No Lead
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1540801NBA300
WL-STCW SMT PHOTOTRANSISTOR CHIP
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$0.2956
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130°
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35 V
20 mA
100 nA
940nm
150 mW
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0805 (2012 Metric)
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VEMT2023SLX01
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70°
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20 V
50 mA
1 nA
860nm
100 mW
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2-SMD, Side View
AEC-Q101
Automotive
TEMT1020
PHOTOTRANSISTOR 730 TO 1000 NM
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$0.1667
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$0.1556
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$0.1444
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30°
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70 V
50 mA
200 nA
880nm
100 mW
Top View
2-SMD, Gull Wing
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-
PT204-6C
SENSOR PHOTO 940NM TOP VIEW RAD
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$0.0313
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$0.0292
10+
$0.0271
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Through Hole
-
-25°C ~ 85°C (TA)
30 V
20 mA
100 nA
940nm
-
Top View
Radial, T-1 Lens
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-
QSD123A4R0
PHOTO TRANSISTOR, 880NM
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Through Hole
24°
-
30 V
16 mA
100 nA
880nm
100 mW
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Radial, 5mm Dia (T 1 3/4)
QSD124A4R0
SENSOR PHOTO 880NM TOP VIEW RAD
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$0.9375
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$0.8750
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$0.8125
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Through Hole
24°
-40°C ~ 100°C (TA)
30 V
-
100 nA
880nm
100 mW
Top View
Radial, 5mm Dia (T 1 3/4)
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-
SFH 309 FA-4/5 RN18C
SENSOR PHOTO 900NM TOP VIEW RAD
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Through Hole
24°
-40°C ~ 100°C (TA)
35 V
15 mA
200 nA
900nm
165 mW
Top View
Radial, T-1 Lens
SFH 309-4 RN18A
SENSOR PHOTO 860NM TOP VIEW RAD
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Through Hole
24°
-40°C ~ 100°C (TA)
35 V
15 mA
200 nA
860nm
165 mW
Top View
Radial
SFH 3201-3-Z
SENSOR PHOTO 850NM TOP VIEW 6SMD
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Surface Mount
120°
-40°C ~ 100°C
20 V
50 mA
200 nA
850nm
120 mW
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6-SMD, Gull Wing
SFH 3400-2-Z
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-
-
-
-
-
-
-
-
-
-
-
QSB363CZR
PHOTO TRANSISTOR, 940NM
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Surface Mount
24°
-25°C ~ 85°C (TA)
30 V
-
100 nA
940nm
75 mW
Top View
2-SMD, Z-Bend
QSC114C
PHOTO TRANSISTOR, 880NM
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Through Hole
-
30 V
-
100 nA
880nm
100 mW
Top View
Radial, 3mm Dia (T-1)
LS600
PHOTO TRANSISTOR
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Surface Mount
-
-65°C ~ 125°C
50 V
100 µA
25 nA
-
50 mW
Top View
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About  Phototransistors

The phototransistor family consists of discrete light-sensitive components that exhibit similar behavior to bipolar transistors. However, unlike bipolar transistors that rely on an electrical current applied through a device terminal, phototransistors utilize incident light to induce conduction. Phototransistors offer several advantages compared to photodiodes. One notable advantage is that they generally generate a larger output current in response to the same intensity of incident light. This higher output current makes phototransistors more suitable for applications where a higher signal strength is desired. On the other hand, phototransistors have a slower response time to changes in light intensity compared to photodiodes. This means that they may not be as well-suited for high-speed operations that require rapid detection and response to light variations. Due to their simpler application and higher output current capabilities, phototransistors are often preferred in situations where simplicity and signal strength are more critical than speed. They find common use in applications such as ambient light sensing, optical switches, encoders, and remote control systems. It is important to consider the specific requirements of a given application when selecting between phototransistors and photodiodes, taking into account factors such as sensitivity, response time, and signal strength. By understanding the unique characteristics and trade-offs of phototransistors, engineers can make informed decisions to optimize their designs for different light sensing scenarios.