CoolMOS™ Series, Single FETs, MOSFETs

Results:
732
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining732
Applied Filters:
CoolMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSeriesTechnologySupplier Device PackageFET FeatureCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
IPI50R350CPXKSA1
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO262-3-1
-
10A (Tc)
500 V
10V
350mOhm @ 5.6A, 10V
3.5V @ 370µA
25 nC @ 10 V
±20V
1020 pF @ 100 V
89W (Tc)
IPA60R650CEE8210XKSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
CoolMOS™
MOSFET (Metal Oxide)
PG-TO220 Full Pack
-
9.9A (Tc)
600 V
10V
650mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
28W (Tc)
IPP50R199CPHKSA1
MOSFET N-CH 550V 17A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
CoolMOS™
MOSFET (Metal Oxide)
PG-TO220-3-1
-
17A (Tc)
550 V
10V
199mOhm @ 9.9A, 10V
3.5V @ 660µA
45 nC @ 10 V
±20V
1800 pF @ 100 V
139W (Tc)
APTC90SKM60T1G
MOSFET N-CH 900V 59A SP1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
N-Channel
SP1
CoolMOS™
MOSFET (Metal Oxide)
SP1
Super Junction
59A (Tc)
900 V
10V
60mOhm @ 52A, 10V
3.5V @ 6mA
540 nC @ 10 V
±20V
13600 pF @ 100 V
462W (Tc)
IPP90R1K0C3XK
MOSFET N-CH 900V 5.7A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
CoolMOS™
MOSFET (Metal Oxide)
PG-TO220-3-1
-
5.7A (Tc)
900 V
10V
1Ohm @ 3.3A, 10V
3.5V @ 370µA
34 nC @ 10 V
±20V
850 pF @ 100 V
89W (Tc)
SPI11N60C3HKSA1
MOSFET N-CH 600V 11A TO262-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO262-3-1
-
11A (Tc)
600 V
10V
380mOhm @ 7A, 10V
3.9V @ 500µA
60 nC @ 10 V
±20V
1200 pF @ 25 V
125W (Tc)
SPI15N65C3HKSA1
MOSFET N-CH 650V 15A TO262-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO262-3-1
-
15A (Tc)
650 V
10V
280mOhm @ 9.4A, 10V
3.9V @ 675µA
63 nC @ 10 V
±20V
1600 pF @ 25 V
156W (Tc)
SPI21N50C3HKSA1
MOSFET N-CH 500V 21A TO262-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO262-3-1
-
21A (Tc)
500 V
10V
190mOhm @ 13.1A, 10V
3.9V @ 1mA
95 nC @ 10 V
±20V
2400 pF @ 25 V
208W (Tc)
IPL65R725CFDAUMA1
MOSFET N-CH 650V 5.8A THIN-PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
CoolMOS™
MOSFET (Metal Oxide)
PG-VSON-4
-
5.8A (Tc)
650 V
10V
725mOhm @ 2.1A, 10V
4.5V @ 200µA
20 nC @ 10 V
±20V
615 pF @ 100 V
62.5W (Tc)
APT30N60SC6
MOSFET N-CH 600V 30A D3PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
CoolMOS™
MOSFET (Metal Oxide)
D3PAK
-
30A (Tc)
600 V
10V
125mOhm @ 14.5A, 10V
3.5V @ 960µA
88 nC @ 10 V
±20V
2267 pF @ 25 V
219W (Tc)
IPS50R520CPBKMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Stub Leads, IPak
CoolMOS™
MOSFET (Metal Oxide)
PG-TO251-3-11
-
7.1A (Tc)
500 V
10V
520mOhm @ 3.8A, 10V
3.5V @ 250µA
17 nC @ 10 V
±20V
680 pF @ 100 V
66W (Tc)
SPI08N50C3HKSA1
MOSFET N-CH 500V 7.6A TO262-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO262-3-1
-
7.6A (Tc)
500 V
10V
600mOhm @ 4.6A, 10V
3.9V @ 350µA
32 nC @ 10 V
±20V
750 pF @ 25 V
83W (Tc)
IPAW60R600CEXKSA1
MOSFET N-CH 600V 10.3A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
CoolMOS™
MOSFET (Metal Oxide)
PG-TO220-FP
Super Junction
10.3A (Tc)
600 V
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
444 pF @ 100 V
28W (Tc)
APT33N90JCCU3
MOSFET N-CH 900V 33A SOT227
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
CoolMOS™
MOSFET (Metal Oxide)
SOT-227
Super Junction
33A (Tc)
900 V
10V
120mOhm @ 26A, 10V
3.5V @ 3mA
270 nC @ 10 V
±20V
6800 pF @ 100 V
290W (Tc)
APT33N90JCU2
MOSFET N-CH 900V 33A SOT227
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-40°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
CoolMOS™
MOSFET (Metal Oxide)
SOT-227
Super Junction
33A (Tc)
900 V
10V
120mOhm @ 26A, 10V
3.5V @ 3mA
270 nC @ 10 V
±20V
6800 pF @ 100 V
290W (Tc)
IPD50R520CPBTMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
CoolMOS™
MOSFET (Metal Oxide)
PG-TO252-3-313
-
7.1A (Tc)
500 V
10V
520mOhm @ 3.8A, 10V
3.5V @ 250µA
17 nC @ 10 V
±20V
680 pF @ 100 V
66W (Tc)
SPI11N65C3HKSA1
MOSFET N-CH 650V 11A TO262-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO262-3-1
-
11A (Tc)
650 V
10V
380mOhm @ 7A, 10V
3.9V @ 500µA
60 nC @ 10 V
±20V
1200 pF @ 25 V
125W (Tc)
SPI12N50C3HKSA1
MOSFET N-CH 500V 11.6A TO262-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO262-3-1
-
11.6A (Tc)
500 V
10V
380mOhm @ 7A, 10V
3.9V @ 500µA
49 nC @ 10 V
±20V
1200 pF @ 25 V
125W (Tc)
IPS50R520CPAKMA1
MOSFET N-CH 500V 7.1A TO251-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
CoolMOS™
MOSFET (Metal Oxide)
PG-TO251-3
-
7.1A (Tc)
500 V
10V
520mOhm @ 3.8A, 10V
3.5V @ 250µA
17 nC @ 10 V
±20V
680 pF @ 100 V
66W (Tc)
SPD04N60C3
MOSFET N-CH 600V 4.5A TO252-3
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
176,736 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
CoolMOS™
MOSFET (Metal Oxide)
PG-TO252-3
-
4.5A (Tc)
600 V
10V
950mOhm @ 2.8A, 10V
3.9V @ 200µA
25 nC @ 10 V
±20V
490 pF @ 25 V
50W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.