Automotive, AEC-Q101 Series, Single FETs, MOSFETs

Results:
104
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Vgs (Max)
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
FET Type
Technology
FET Feature
Grade
Qualification
Results remaining104
Applied Filters:
Automotive, AEC-Q101
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeSeriesFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Operating TemperatureTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
NVD4813NHT4G
MOSFET N-CH 30V 7.6A/40A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
30 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
7.6A (Ta), 40A (Tc)
4.5V, 11.5V
13mOhm @ 30A, 10V
10 nC @ 4.5 V
±20V
940 pF @ 12 V
1.27W (Ta), 35.3W (Tc)
NVTE4151PT1G
MOSFET P-CH 20V 0.76A SC-89
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Automotive, AEC-Q101
-
-
-
-
-
-
-
-
760mA (Tj)
-
-
-
-
-
-
NVTS4409NT1G
MOSFET N-CH 25V/8V 0.075A SC-70
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Automotive, AEC-Q101
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK9214-80EJ
MOSFET N-CH 80V DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Automotive, AEC-Q101
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK9234-100EJ
MOSFET N-CH 100V DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Automotive, AEC-Q101
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMD3P03R2G
MOSFET 2P-CH 30V 2.34A 8SOIC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
P-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
30 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
Standard
2.5V @ 250µA
2.34A (Tj)
4.5V, 10V
85mOhm @ 3.05A, 10V
25 nC @ 10 V
±20V
750 pF @ 24 V
730mW (Ta)
NVMFS5C404NWFT3G-K
MOSFET N-CH 40V 53A/378A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
40 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
53A (Ta), 378A (Tc)
10V
0.7mOhm @ 50A, 10V
128 nC @ 10 V
±20V
8400 pF @ 25 V
3.9W (Ta), 200W (Tc)
NVD4815NT4G
MOSFET N-CH 30V 6.9A/35A DPAK-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
30 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
6.9A (Ta), 35A (Tc)
4.5V, 11.5V
15mOhm @ 30A, 10V
6.6 nC @ 4.5 V
±20V
770 pF @ 12 V
1.26W (Ta), 32.6W (Tc)
NVMFS6B75NLWFT3G
MOSFET N-CH 100V 7A/28A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
3V @ 250µA
7A (Ta), 28A (Tc)
4.5V, 10V
30mOhm @ 10A, 10V
11.3 nC @ 10 V
±16V
740 pF @ 25 V
3.5W (Ta), 56W (Tc)
NVMFS6B85NLWFT3G
MOSFET N-CH 100V 5.6A/19A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2.4V @ 250µA
5.6A (Ta), 19A (Tc)
4.5V, 10V
46mOhm @ 10A, 10V
7.9 nC @ 10 V
±16V
480 pF @ 25 V
3.5W (Ta), 42W (Tc)
DMG3N60SJ3
MOSFET N-CH 650V 2.8A TO251
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
Automotive, AEC-Q101
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
TO-251
650 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
2.8A (Tc)
10V
3.5Ohm @ 1.5A, 10V
12.6 nC @ 10 V
±30V
354 pF @ 25 V
41W (Tc)
DMG7N65SCTI
MOSFET N-CH 650V 7.7A ITO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
Automotive, AEC-Q101
N-Channel
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
650 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
7.7A (Tc)
10V
1.4Ohm @ 2.5A, 10V
25.2 nC @ 10 V
±30V
886 pF @ 50 V
28W (Tc)
NVD4809NHT4G
MOSFET N-CH 30V 9A/58A DPAK-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
30 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2.5V @ 250µA
9A (Ta), 58A (Tc)
4.5V, 11.5V
9mOhm @ 30A, 10V
44 nC @ 11.5 V
±20V
2155 pF @ 12 V
1.3W (Ta), 52W (Tc)
NVMFS5C646NLWFT3G
MOSFET N-CH 60V 20A/93A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
60 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
2V @ 250µA
20A (Ta), 93A (Tc)
4.5V, 10V
4.7mOhm @ 50A, 10V
33.7 nC @ 10 V
±20V
2164 pF @ 25 V
3.7W (Ta), 79W (Tc)
NVMFS6B03NT3G
MOSFET N-CH 100V 132A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
145A (Tc)
10V
4.8mOhm @ 20A, 10V
58 nC @ 10 V
±16V
4200 pF @ 50 V
3.9W (Ta), 198W (Tc)
NVMFS6B05NT3G
MOSFET N-CH 100V 104A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
114A (Tc)
10V
8mOhm @ 20A, 10V
44 nC @ 10 V
±16V
3100 pF @ 25 V
3.8W (Ta), 165W (Tc)
NVMFS6B05NWFT3G
MOSFET N-CH 100V 104A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
4V @ 250µA
114A (Tc)
10V
8mOhm @ 20A, 10V
44 nC @ 10 V
±16V
3100 pF @ 25 V
3.8W (Ta), 165W (Tc)
NVTGS3455T1G
MOSFET N-CH 30V 3.5A 6-TSOP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Automotive, AEC-Q101
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NVMFS6B03NLWFT3G
MOSFET N-CH 100V 20A 5DFN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
100 V
-55°C ~ 175°C (TJ)
MOSFET (Metal Oxide)
-
3V @ 250µA
145A (Tc)
4.5V, 10V
4mOhm @ 20A, 10V
9.4 nC @ 10 V
±16V
5320 pF @ 25 V
3.9W (Ta), 198W (Tc)
DMN3730UFB4-7B
MOSFET N-CH 30V 750MA 3DFN
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
310,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
Automotive, AEC-Q101
N-Channel
3-XFDFN
X2-DFN1006-3
30 V
-55°C ~ 150°C (TJ)
MOSFET (Metal Oxide)
-
950mV @ 250µA
750mA (Ta)
1.8V, 4.5V
460mOhm @ 200mA, 4.5V
1.6 nC @ 4.5 V
±8V
64.3 pF @ 25 V
470mW (Ta)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.